Result for "Atomic layer semiconductors",114

Distinguished Technical Member

flow-rate modulation epitaxy and the growth of atomic-layer structure, and in-situ optical monitoring

https://www.rd.ntt/e/brl/result/activities/file/report98/E/tokubetsu.e.html

Yoshitaka Taniyasu | NTT R&D Website

, Atomic-layer semiconductors, Crystal growth, Light-emitting devices, Electron devices Related Contents

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

Pioneering the Understanding and Functional Exploration of Carrier Dynamics in Atomic-layer Materials | NTT R&D Website

Pioneering the Understanding and Functional Exploration of Carrier Dynamics in Atomic-layer

https://www.rd.ntt/e/research/JN202505_33801.html

国際会議招待講演一覧（2010年）

epitaxial few-layer graphene on SiC", International Workshop on in situ characterization of near surface

https://www.rd.ntt/brl/result/activities/file/report10/data07.html

List of Invited Talks at International Conferences (2010)

epitaxial few-layer graphene on SiC", International Workshop on in situ characterization of near surface

https://www.rd.ntt/e/brl/result/activities/file/report10/data07.html

Successful nanowire lasing at room temperature in the optical communication wavelength range ｜NTT Basic Research Laboratories | NTT R&D Website

emission layer and the barrier layer, which is abrupt and undisturbed at the atomic level in a nanowire

https://www.rd.ntt/e/brl/latesttopics/2019/02/latest_topics_201902241146.html

Overview and Prospects for Research on Plasmons in Two-dimensional Semiconductor Systems | NTT R&D Website

-dimensionally confined electron systems in semiconductor heterostructures and in graphene, a single atomic layer

https://www.rd.ntt/e/research/JN202303_21252.html

Overview of Research in Laboratories

design at the atomic and molecular levels. This laboratory consists of three research groups

https://www.rd.ntt/e/brl/result/activities/file/report13/report00E.html

Overview of Research in Laboratories

design at the atomic and molecular levels. This laboratory consists of three research groups

https://www.rd.ntt/e/brl/result/activities/file/report14/report00E.html

Pioneering Valley Physics with Two-dimensional Semiconductors | NTT R&D Website

Pioneering Valley Physics with Two-dimensional Semiconductors | NTT R&D Website NTT R&D Website

https://www.rd.ntt/e/research/JN202604_38943.html

Semiconductor quantum dots with single-atom precision｜NTT Basic Research Laboratories | NTT R&D Website

or less. The MBE can control thickness of grown film at atomic layer precision. The single crystal

https://www.rd.ntt/e/brl/latesttopics/2014/06/latest_topics_201406300201.html

Research Activities in NTT Basic Research Laboratories

-structures at molecular and atomic levels and Quantum Information Technology based on quantum mechanical

https://www.rd.ntt/e/brl/result/activities/file/report01/BRLReports_E.pdf

First demonstration of nanowire lasers at telecom wavelengths and high-speed signal modulation｜NTT Basic Research Laboratories | NTT R&D Website

semiconductors is generally small at telecom bands. Achievements NTT Nanophotonics Center (located in Atsugi

https://www.rd.ntt/e/brl/latesttopics/2017/04/latest_topics_201704031636.html

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

https://www.rd.ntt/e/brl/group_introduction/group_001.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

and Y. Kobayashi "Insitu Monitoring And Control Of Atomic Layer Epitaxy By Surface Photoabsorption

https://www.rd.ntt/brl/result/publications/paper_1993.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

), 5138-5143 (1993). N. Kobayashi and Y. Kobayashi "Insitu Monitoring And Control Of Atomic Layer Epitaxy

https://www.rd.ntt/e/brl/result/publications/paper_1993.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

Lines From Nitrogen Atomic-Layer-Doped Gaas" Appl. Phys. Lett. 67 (5), 688-690 (1995). T. Makimoto and N

https://www.rd.ntt/brl/result/publications/paper_1995.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

Lines From Nitrogen Atomic-Layer-Doped Gaas" Appl. Phys. Lett. 67 (5), 688-690 (1995). T. Makimoto and N

https://www.rd.ntt/e/brl/result/publications/paper_1995.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Makimoto, N. Kobayashi, and Y. Horikoshi "Electron Conduction In An Atomic-Layer-Doped Gaas Plane" Jpn. J

https://www.rd.ntt/brl/result/publications/paper_1988.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Horikoshi "Electron Conduction In An Atomic-Layer-Doped Gaas Plane" Jpn. J. Appl. Phys. Part 2 - Lett. 27 (5

https://www.rd.ntt/e/brl/result/publications/paper_1988.html

薄膜材料研究グループ｜NTT物性科学基礎研究所｜NTT R&D Website

-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition Appl. Phys. Lett

https://www.rd.ntt/brl/group_introduction/group_001.html

Nano-profiling of frozen electrons in a semiconductor device｜NTT Basic Research Laboratories | NTT R&D Website

those at a Si/SiO2 interface, in single-atomic-layer materials such as graphene, and on a liquid helium

https://www.rd.ntt/e/brl/latesttopics/2014/07/latest_topics_201407210203.html

Research Activities

Heterostructures with an Atomic-Layer-Deposited Insulating Layer ♦ Indium Atom Manipulation on a Cleaved InAs

https://www.rd.ntt/e/brl/result/activities/file/report11/Report_11.pdf

Hideki Yamamoto - Senior distinguished researcher

. Yamamoto, Y. Krockenberger, M. Tanaka, and S. Ohya: Single-layer spin-orbit-torquemagnetization switching

https://www.rd.ntt/brl/people/hideki/E/result.html

NTT物性科学基礎研究所 上席特別研究員 山本秀樹

-2719 (2021). [2] Y. Krockenberger, A. Ikeda, and H. Yamamoto: Atomic Stripe Formation in Infinite-Layer

https://www.rd.ntt/brl/people/hideki/result.html

Microsoft Word - 01_akasaka-E.doc

Novel Buffer Layer ♦ AlN field emission display ♦ Real-time Observation of Nanowire Formation by Means

https://www.rd.ntt/e/brl/result/activities/file/report04/BRLReports_E.pdf

NTTBrl_honbun_E_230228_final.indd

performance of this device by incorporating a variety of two-dimensional atomic layer materials, thereby

https://www.rd.ntt/brl/brl/result/activities/file/annual_report/Annual_report_2022_E.pdf

NTTBrl_honbun_E_230228_final.indd

performance of this device by incorporating a variety of two-dimensional atomic layer materials, thereby

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2022_E.pdf

NTT-BRL Research Activities Vol 19

Ligand-Induced Conformational Changes in Single ATP Receptors with Fast-Scanning Atomic Force Microscopy

https://www.rd.ntt/e/brl/result/activities/file/report08/BRLreport_2008E.pdf

NTTBrl_honbun_E_260302.indd

, and spintronic) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials

https://www.rd.ntt/brl/result/activities/file/annual_report/NTTBrl_E_260310_print.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Kobayashi and N. Kobayashi "Growth-Rate Self-Limitation Mechanism In Inp Atomic Layer Epitaxy Studied By

https://www.rd.ntt/brl/result/publications/paper_1992.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Kobayashi and N. Kobayashi "Growth-Rate Self-Limitation Mechanism In Inp Atomic Layer Epitaxy Studied By

https://www.rd.ntt/e/brl/result/publications/paper_1992.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

-Rate Modulation Epitaxy And Atomic Layer Epitaxy By New Insitu Optical Monitoring Method" Acta Polytech

https://www.rd.ntt/brl/result/publications/paper_1990.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

-Rate Modulation Epitaxy And Atomic Layer Epitaxy By New Insitu Optical Monitoring Method" Acta Polytech

https://www.rd.ntt/e/brl/result/publications/paper_1990.html

Publications - NTT Basic Research Laboratories

Diamond Surface by Using Atomic- Layer-Deposited Al2O3 Overlayer and its Electric Properties M. Kasu, H

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/new1001003.html

Poster presentaion - SciencePlaza 2009 - NTT Basic Reseach Laboratories

structure and electronic properties of epitaxial few-layer graphene on the number of layers PDF F.Maeda / H

https://www.rd.ntt/brl/event/splaza2009/poster_e.html

report_2005E.pdf

voltage. We have developed a buffer layer for the growth of high-quality nitride-based semiconductors on

https://www.rd.ntt/e/brl/result/activities/file/report05/report_2005E.pdf

english.pdf

Telegraph and Telephone Corporation (NTT) Basic Research Laboratories Atomic Force Microscopy Images

https://www.rd.ntt/e/brl/result/activities/file/report00/english.pdf

BRLReports_E.pdf

at molecular and atomic levels and Quantum Information Technology based on quantum mechanical

https://www.rd.ntt/e/brl/result/activities/file/report02/BRLReports_E.pdf

Hideki Yamamoto | NTT R&D Website

. Yamamoto, and H. Sato: Reflection high-energy electron diffraction and atomic force microscopy studies on

https://www.rd.ntt/e/organization/researcher/superior/s_024.html

山本 秀樹 | NTT R&D Website

(1997). M. Naito, H. Yamamoto, and H. Sato: Reflection high-energy electron diffraction and atomic force

https://www.rd.ntt/organization/researcher/superior/s_024.html

Report_12.pdf

using InAlAs for the sacrificial layer in order to reduce the leakage current, we realized a LEAP laser

https://www.rd.ntt/brl/result/activities/file/report12/Report_12.pdf

Report_12.pdf

using InAlAs for the sacrificial layer in order to reduce the leakage current, we realized a LEAP laser

https://www.rd.ntt/e/brl/result/activities/file/report12/Report_12.pdf

国際会議招待講演一覧

", International Symposium on Revolutionary Atomic-layer Materials, Sendai, Japan (Oct. 2016). (13) H. Yamaguchi

https://www.rd.ntt/brl/result/activities/file/report16/data11J.html

List of Invited Talks

III-V Semiconductor Heterostructures", International Symposium on Revolutionary Atomic-layer Materials

https://www.rd.ntt/e/brl/result/activities/file/report16/data10E.html

BRLReports_E.pdf

cavity layer is degraded by the large lattice mismatch between the GaN-based mirror layers. A high

https://www.rd.ntt/e/brl/result/activities/file/report03/BRLReports_E.pdf

NTTBrl_honbun_E_220301-2.indd

) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2021_E.pdf

Annual_report_2019_E.pdf

Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin functional atomic-layer

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2019_E.pdf

Research Activities

can control the hetero-interfaces of nitride semiconductors in an atomic scale and realize high

https://www.rd.ntt/e/brl/result/activities/file/report09/BRLreport_2009E.pdf

NTT物性科学基礎研究所の研究活動

Semiconductors ♦ Encapsulated Gate-All-Around InAs Nanowire Field-Effect Transistors ♦ AC Admittance of DNTT

https://www.rd.ntt/e/brl/result/activities/file/report13/Report_13_e.pdf

Papers>>Others -KN's HP-

layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode    Selected for

https://www.rd.ntt/brl/people/knishi50/paper_4.html

NTTBrl__E_h1

funct ions th rough mate r ia ls design and arrangement control at the atomic and molecular levels. The

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2017_E.pdf

Publications | NTT Basic Research Laboratories | NTT R&D Website

GaAs quantum wells" Solid State Commun. 108 (11) 857-861 (1998). P. Finnie, and Y. Homma "Atomic step

https://www.rd.ntt/e/brl/result/publications/paper_1998.html

Annual_report_2020_E.pdf

, and spintronic) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2020_E.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

"Atomic step networks as selective epitaxial templates" Appl. Phys. Lett. 72 (7) 827-829 (1998). S. R

https://www.rd.ntt/brl/result/publications/paper_1998.html

Activity report

InAs/AlGaSb Heterostructure Nanobeam Nanoelectromechanical systems comprising compound semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report07/BRLreport_2007E.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

"Carbon Incorporation Mechanism In Atomic Layer Epitaxy Of Gaas And Algaas" Appl. Surf. Sci. 82-3, 284-289

https://www.rd.ntt/brl/result/publications/paper_1994.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

"Carbon Incorporation Mechanism In Atomic Layer Epitaxy Of Gaas And Algaas" Appl. Surf. Sci. 82-3, 284-289

https://www.rd.ntt/e/brl/result/publications/paper_1994.html

英文論文一覧

semiconductors from GaN to InN - MOVPE growth and characteristics", Superlattices Microstruct. 37 (1), 19-32

https://www.rd.ntt/brl/result/activities/file/report05/data12.html

List of Research Papers Published in International Journals

(2005). 14. T. Matsuoka, "Progress in nitride semiconductors from GaN to InN - MOVPE growth and

https://www.rd.ntt/e/brl/result/activities/file/report05/data13.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Yamamoto Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy

https://www.rd.ntt/brl/result/publications/paper_2014.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy" Jpn. J. Appl

https://www.rd.ntt/e/brl/result/publications/paper_2014.html

Report_14_E.pdf

Release Layer ♦ MBE Growth of Transition Metal Dichalcogenide Thin Films ♦ Superconducting and Insulating

https://www.rd.ntt/e/brl/result/activities/file/report14/Report_14_E.pdf

Andreev reflection of fractionally charged quasiparticles- First observation of Andreev reflection in a material other than superconductors -｜NTT Basic Research Laboratories | NTT R&D Website

of a semiconductor heterostructure and in atomic layer material such as graphene. *5 ... Topological

https://www.rd.ntt/e/brl/latesttopics/2021/05/latest_topics_202105141456.html

BRLreport_2006E.pdf

future. The great progress made on wide-bandgap semiconductors, single-electron devices, photonic

https://www.rd.ntt/e/brl/result/activities/file/report06/BRLreport_2006E.pdf

Quantum Solid State Physics Research Group | Basic Research Laboratories | NTT R&D Website

heterostructures and nanostructures of semiconductors and atomic layer materials, we aim to develop quantum devices

https://www.rd.ntt/e/brl/group_introduction/group_006.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

"Stacking domains of epitaxial few-layer graphene on SiC(0001)" Phys. Rev. B 80 (8), 085406 (2009). H

https://www.rd.ntt/brl/result/publications/paper_2009.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

epitaxial few-layer graphene on SiC(0001)" Phys. Rev. B 80 (8), 085406 (2009). H. Hibino, H. Kageshima, M

https://www.rd.ntt/e/brl/result/publications/paper_2009.html

英文論文一覧

). 8. S. Karimoto and M. Naito, "Electron-doped infinite-layer thin films with T-C over 40 K grown on

https://www.rd.ntt/brl/result/activities/file/report04/data13.html

List of Research Papers Published in International Journals

-layer thin films with T-C over 40 K grown on DyScO3 substrates," Appl. Phys. Lett. 84 (12), 2136-2138

https://www.rd.ntt/e/brl/result/activities/file/report04/data13.html

NTTBrl_honbun_E_250225.indd

Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin functional atomic-layer

https://www.rd.ntt/brl/result/activities/file/annual_report/NTTBrl_E_250321_print.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Finnie, and Y. Homma "Maskless selective area molecular beam epitaxy of semiconductors and metals using

https://www.rd.ntt/brl/result/publications/paper_1999.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Finnie, and Y. Homma "Maskless selective area molecular beam epitaxy of semiconductors and metals using

https://www.rd.ntt/e/brl/result/publications/paper_1999.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

(2010). H. Hibino, H. Kageshima, and M. Nagase "Epitaxial few-layer graphene: towards single crystal

https://www.rd.ntt/brl/result/publications/paper_2010.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

(2010). H. Hibino, H. Kageshima, and M. Nagase "Epitaxial few-layer graphene: towards single crystal

https://www.rd.ntt/e/brl/result/publications/paper_2010.html

Annual_report_2023_E.pdf

) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2023_E.pdf

Annual_report_2023_E.pdf

) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin

https://www.rd.ntt/brl/brl/result/activities/file/annual_report/Annual_report_2023_E.pdf

Papers -KN's HP-

characteristics of photo-excited SETs without strong vertical electric fields. Selective layer-free blood serum

https://www.rd.ntt/brl/people/knishi50/paper_all.html

NTTBrl_honbun_E_190306.indd

atomic layer electronics Complex Oxide Thin Films Creation of t railblazing superconductors and magnetic

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2018_E.pdf

山本 喜久｜NTT R&D Website

Optical Guided Modes in Multilayer Metal Clad Planar Optical Guide with Low-Index Dielectric Buffer Layer

https://www.rd.ntt/organization/authority/008.html

] Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-layer-deposited Insulating Layer K

https://www.rd.ntt/brl/people/muraki/Publications/FullList.html

Publication List

Mechanisms of Nitride Semiconductors in Metalorganic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. 53, 100201

https://www.rd.ntt/e/brl/result/activities/file/report14/data08E.html

学術論文出版一覧

Semiconductors in Metalorganic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. 53, 100201 (2014). (2) H. Akazawa and Y

https://www.rd.ntt/brl/result/activities/file/report14/data09J.html

Microsoft Word - CV-AkiraFujiwara.doc

: Spectral Blue Shift of Photoluminescence in Strained-Layer Si1-Xgex/Si Quantum-Well Structures Grown by Gas

https://www.rd.ntt/brl/people/afuji/CV-AkiraFujiwara.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

of Au-Si alloy islands at atomic steps" Surf. Sci. 588 (1-3) L233-L238 (2005). H. Hibino, and Y

https://www.rd.ntt/brl/result/publications/paper_2005.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

atomic steps" Surf. Sci. 588 (1-3) L233-L238 (2005). H. Hibino, and Y. Watanabe "Growth of twinned

https://www.rd.ntt/e/brl/result/publications/paper_2005.html

Research Activities

of nitride semiconductors, especially aluminum nitride (AlN). He received the Young Scientist Award

https://www.rd.ntt/e/brl/result/activities/file/report10/Report_2010E.pdf

First Experimental Demonstration of a Phenomenon That Had Not Been Verified for More Than 20 Years Since Its Theory Was Proposed | NTT R&D Website

atomic-layer materials, I'm exploring quantum devices with new functions that cannot be obtained with

https://www.rd.ntt/e/research/JN202312_24208.html

Quantum Optical Physics Research Group | NTT Basic Research Laboratories | NTT R&D Website

Gd2O3 grown on a Si(111) substrate by inserting a bifunctional GdOx layer Crystengcomm (2024). T

https://www.rd.ntt/e/brl/group_introduction/group_010.html

Report_16_E.pdf

Millimeter-scale Single-crystalline Graphene on the Copper Surface with a Native Oxide Layer 24 ◆ Theory of a

https://www.rd.ntt/e/brl/result/activities/file/report16/Report_16_E.pdf

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Laboratories, University of Tokushima Two-Stage Growth of Aluminium Oxide on Graphite by Atomic Layer

https://www.rd.ntt/brl/event/isntt2011/download/isntt2011_program_revised_1.pdf

Updates | NTT R&D Website

Carrier Dynamics in Atomic-layer Materials 07/25/2025 Using Silicon Transistors to Enable Control and

https://www.rd.ntt/e/update_information/

量子光デバイス研究グループ｜NTT 物性科学基礎研究所｜NTT R&D Website

inserting a bifunctional GdOx layer Crystengcomm (2024). T. Odagawa, S. Yamamoto, C. L. Zhang, K. Koyama, J

https://www.rd.ntt/brl/group_introduction/group_010.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Kageshima, and A. Fujiwara "First-principles study on inversion layer properties of double-gate atomically

https://www.rd.ntt/e/brl/result/publications/paper_2008.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Kageshima, and A. Fujiwara "First-principles study on inversion layer properties of double-gate atomically

https://www.rd.ntt/brl/result/publications/paper_2008.html

Report_15_E.pdf

stress in the GaAs (the green colored lower layer). This stress causes bending. Thus, the cantilever can

https://www.rd.ntt/e/brl/result/activities/file/report15/Report_15_E.pdf

NTT物性科学基礎研究所の研究活動

and its application to various semiconductors」 12 月 18 日 田沼 繁夫 博士 物質・材料研究機構 ナノマテリアル研究所 NTT 物性科学基礎研究

https://www.rd.ntt/brl/result/activities/file/report01/BRLRepots_J.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Finnie, and M. Uwaha "Morphological instability of atomic steps observed on Si(111) surfaces" Surf. Sci

https://www.rd.ntt/brl/result/publications/paper_2001.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Finnie, and M. Uwaha "Morphological instability of atomic steps observed on Si(111) surfaces" Surf. Sci

https://www.rd.ntt/e/brl/result/publications/paper_2001.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

"Fabrication of structures with III-V compound semiconductors embedded into 3D photonic crystals" Thin Solid

https://www.rd.ntt/brl/result/publications/paper_2003.html