▼ Ordered by first author
"Automated Entry System For Printed Documents"
Pattern Recognit. 23 (11), 1141-1154 (1990).
"Synthesis Of Alkali-Soluble Silicone Resin Suitable For Resist Material In Microlithography"
Polymer 31 (3), 564-568 (1990).
"Application Of Reflectance Difference Spectroscopy (Rds) To Migration-Enhanced Epitaxy (Mee) Growth Of Gaas"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 29 (6), 1014-1021 (1990).
"Saturation Of Phase Coherence Length In Gaas/Algaas On-Facet Quantum Wires"
Appl. Phys. Lett. 56 (21), 2123-2125 (1990).
"Lateral Quantum-Well Wires Fabricated By Selective Metalorganic Chemical Vapor-Deposition"
Appl. Phys. Lett. 57 (12), 1209-1211 (1990).
"Ideal Crystal-Growth From Kink Sites On A Gaas Vicinal Surface By Metalorganic Chemical Vapor-Deposition"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (5), L731-L732 (1990).
"Natural Superstep Formed On Gaas Vicinal Surface By Metalorganic Chemical Vapor-Deposition"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (3), L483-L485 (1990).
"(Alas)1/2(Gaas)1/2 Fractional-Layer Superlattices Grown On (001) Vicinal Gaas Substrates By Mocvd"
Surf. Sci. 228 (1-3), 20-23 (1990).
"Optical-Properties Of Silicon Network Polymers"
Macromolecules 23 (14), 3423-3426 (1990).
"The Ta-181 Nuclear-Quadrupole Interaction In The Charge-Density Wave Phases Of 1t-Tas2"
Z. Naturfors. Sect. A-J. Phys. Sci. 45 (3-4), 439-444 (1990).
"Anomalous Current-Voltage Characteristics Due To Macroscopic Resonant Tunneling In A Small Josephson Junction"
Phys. Rev. B 42 (7), 3987-3991 (1990).
"Macroscopic Resonant Tunneling And Anomalous Current-Voltage Characteristics"
Physica B 165, 931-932 (1990).
"Electrochemical Oxidation Of Vacuum-Deposited Carbazole - Preparation And Film Properties"
Synth. Met. 35 (3), 253-261 (1990).
"Weak Localization, Fluctuation, And Superconductivity In Thin Nb Films And Wires"
Phys. Rev. B 42 (1), 118-126 (1990).
"Atomistic Locking And Friction"
Phys. Rev. B 41 (17), 11837-11851 (1990).
"Large Magnetic Depopulation Of Multiple Parallel Ballistic Point Contacts With Circulating Channels"
Phys. Rev. B 42 (17), 11408-11412 (1990).
"Transport-Properties Of Parallel Multiple Ballistic Point Contacts"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (2), L368-L370 (1990).
"Transport Characteristics Of Series Ballistic Point Contacts"
Phys. Rev. B 41 (5), 2927-2930 (1990).
"Transport Characteristics Of Series Ballistic One-Dimensional Channels With Small Separation"
Solid State Commun. 73 (2), 113-117 (1990).
"Dc-Resistive-Heating-Induced Step Bunching On Vicinal Si (111)"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (12), L2254-L2256 (1990).
"Growth-Process Of Iii-V-Compound Semiconductors By Migration-Enhanced Epitaxy"
J. Cryst. Growth 105 (1-4), 326-338 (1990).
"Quantitative-Analysis Of The Steady-State Currents Of Reversible Redox Species At A Microdisk Array Electrode Embedded In A Surface Electrode"
J. Electroanal. Chem. 295 (1-2), 25-40 (1990).
"Microscopic Theory Of The Continuous Measurement Of Photon Number"
Phys. Rev. A 41 (7), 4127-4130 (1990).
"One-Dimensional Hetero-Junction Structure In Polysilane"
J. Appl. Phys. 68 (12), 6380-6382 (1990).
"Magnetic Phase-Transition In Gd2cuo4 Single-Crystal"
Solid State Commun. 75 (9), 765-768 (1990).
"The Origin Of Curie-Weiss Susceptibility In Ba2ycu3oy"
Physica C 165 (2), 139-142 (1990).
"Closed World Assumptions Having Precedence In Predicates"
New Gener. Comput. 8 (3), 185-209 (1990).
"Crystal-Structures And Properties Of Superconducting Materials.1"
Phase Transit. 23 (2-4), 73-250 (1990).
"High-Pressure Synthesis Of Superconducting La2-Xca1+Xcu2o6-X/2+Delta"
Physica C 171 (5-6), 523-527 (1990).
"Preparation And Superconducting Properties Of La2-X(Ca1-Ysry)1+Xcu2o6-X/2+Delta"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (9), L1632-L1634 (1990).
"Crystal-Structure And Superconducting Properties Of Bapb1-X-Ybixcuyo3-Delta"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (3), L405-L407 (1990).
"Conditions For Diffusion-Controlled Steady-State Growth Of Pb1-Xsnxte Under Microgravity"
J. Cryst. Growth 99 (1-4), 1276-1280 (1990).
"Spectral Dependence Of Optical Reflection During Flow-Rate Modulation Epitaxy Of Gaas By The Surface Photoabsorption Method"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (5), L702-L705 (1990).
"Investigation Of Growth-Processes In Flow-Rate Modulation Epitaxy And Atomic Layer Epitaxy By New Insitu Optical Monitoring Method"
Acta Polytech. Scand.-Chem. Technol. Ser. (195), 139-145 (1990).
"Direct Demonstration Of The Power To Break Public-Key Cryptosystems"
Lect. Notes Comput. Sci. 453, 14-21 (1990).
"Intensity-Dependent Photon-Echo Relaxation In Rare-Earth-Doped Crystals"
Phys. Rev. B 41 (16), 11568-11571 (1990).
"Fermi-Liquid Picture For Cuprous Oxides"
Physica B 165, 1003-1004 (1990).
"Thermomagnetic Analysis Of Compositional Separation In Sputtered Co-Cr Films"
J. Appl. Phys. 68 (9), 4751-4759 (1990).
"A Gaas(T)/Alas(X) Double-Channel Structure For Velocity Modulation Transistors"
Inst. Phys. Conf. Ser. (112), 515-520 (1990).
"P+-N+ Gaas Tunnel Junction Diodes Grown By Flow-Rate Modulation Epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (12), L2250-L2253 (1990).
"Investigation Of The Decomposition Process Of Ga Organometals In Mocvd By The Surface Photo-Absorption Method"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (4), L645-L648 (1990).
"Insitu Optical Monitoring Of The Gaas Growth-Process In Mocvd"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (2), L207-L209 (1990).
"Electronic-Structures And Properties Of Silicon-Based Polymers"
Nippon Kagaku Kaishi (5), 557-565 (1990).
"Cw Photon-Echo - Theory And Observations"
Phys. Rev. A 42 (3), 1617-1629 (1990).
"248-Bit Optical-Data Storage In Eu3+-Yalo3 By Accumulated Photon-Echoes"
Opt. Lett. 15 (3), 195-197 (1990).
"Vertically Separated Interdigitated Array Electrodes For Highly Sensitive Detection Of Catecholamines"
Abstr. Pap. Am. Chem. Soc. 200, 156-ANYL (1990).
"Detuning Characteristics And Conversion Efficiency Of Nearly Degenerate 4-Wave-Mixing In A 1.5-Mu-M Traveling-Wave Semiconductor-Laser Amplifier"
IEEE J. Quantum Electron. 26 (5), 865-875 (1990).
"Temperature-Dependence Of Anisotropic Lower Critical Fields In (La1-Xsrx)2cuo4"
Phys. Rev. B 41 (7), 4823-4826 (1990).
"Permanent Grating Induced By Nonlinear Absorption In Polysilane Films"
Appl. Phys. Lett. 57 (27), 2876-2878 (1990).
"Fabrication Of Quantum Wires By Ga Focused-Ion-Beam Implantation And Their Transport-Properties"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 29 (1), 48-52 (1990).
"Anser - An Application Of Speech Technology To The Japanese Banking Industry"
Computer 23 (8), 43-48 (1990).
"Nqr And Low-Field Nmr Of Ta-18 In The Low-Temperature Cdw State Of 2h-Tas2"
Z. Naturfors. Sect. A-J. Phys. Sci. 45 (3-4), 412-414 (1990).
"Electrochemical-Behavior Of Reversible Redox Species At Interdigitated Array Electrodes With Different Geometries - Consideration Of Redox Cycling And Collection Efficiency"
Anal. Chem. 62 (5), 447-452 (1990).
"Effects Of Annealing On The Structural-Properties Of Gaas On Si(100) Grown At A Low-Temperature By Migration-Enhanced Epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (4), L540-L543 (1990).
"Electronic-Structures Of (Gaas)1/(Ge2)1 Superlattices"
Solid State Commun. 74 (1), 7-9 (1990).
"1st-Principles Study Of Sulfur Passivation Of Gaas(001) Surfaces"
Phys. Rev. B 42 (17), 11194-11197 (1990).
"Meet-In-The-Middle Attack On Digital Signature Schemes"
Lect. Notes Comput. Sci. 453, 140-154 (1990).
"Self-Induced Phase Turbulence And Chaotic Itinerancy In Coupled Laser Systems"
Phys. Rev. Lett. 65 (3), 329-332 (1990).
"High-Speed Self-Pulsation In A 2-Element Optical Bistable Device"
Opt. Commun. 76 (3-4), 245-249 (1990).
"Migration-Enhanced Epitaxy Growth And Characterization Of High-Quality Znse/Gaas Superlattices"
Appl. Phys. Lett. 57 (11), 1102-1104 (1990).
"Impurity-Induced Disordering In Fractional-Layer Growth On A (001) Vicinal Surface By Metalorganic Chemical Vapor-Deposition"
Appl. Phys. Lett. 56 (1), 87-88 (1990).
"Optical Ionization-Energy Of Shallow Donors In S-Doped Epitaxial Gaas"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (5), L694-L697 (1990).
"Gain Saturation Characteristics Of Traveling-Wave Semiconductor-Laser Amplifiers In Short Optical Pulse Amplification"
IEEE J. Quantum Electron. 26 (12), 2086-2094 (1990).
"Low-Noise Characteristics Of A Gaas Algaas Multiple-Quantum-Well Semiconductor-Laser Amplifier"
IEEE Photonics Technol. Lett. 2 (11), 794-796 (1990).
"Soliton-Collision Interferometer For The Quantum Nondemolition Measurement Of Photon Number - Numerical Results"
Opt. Lett. 15 (4), 239-241 (1990).
"Technique For Enhanced 2nd Harmonic Output Power"
Opt. Commun. 76 (3-4), 250-252 (1990).
"Compression Of Intracavity Chirped Pulses From A Cw Passive Mode-Locked Ti-Sapphire Laser"
Opt. Commun. 77 (1), 49-52 (1990).
"Cw Passive-Mode Locking Of A Ti-Sapphire Laser"
Appl. Phys. Lett. 56 (9), 814-815 (1990).
"All Solid-State Cw Passively Mode-Locked Ti-Sapphire Laser Using A Colored Glass Filter"
Appl. Phys. Lett. 57 (3), 229-230 (1990).
"Photoluminescence From Gaas Algaas Quantum-Wells With Inas Monomolecular Planes Grown By Flow-Rate Modulation Epitaxy"
Surf. Sci. 228 (1-3), 192-196 (1990).
"Modulation Of Quantized Levels Of Gaas/Algaas Quantum-Wells By Inas Monomolecular Plane Insertion"
Appl. Phys. Lett. 56 (16), 1555-1557 (1990).
"Epitaxial Crystallization Of Polyoxymethylene On Nacl Single-Crystal In Dilute-Solution"
J. Polym. Sci. Pt. B-Polym. Phys. 28 (7), 1163-1170 (1990).
"Superconductivity And Crystallographic Properties Of La2-Xnaxcuo4-Delta, La-2-X-Kcuo4-Delta"
Physica C 170 (5-6), 411-415 (1990).
"Crystal-Structure Of Low Oxygen-Defect Tetragonal Ba2ycu3o6.75"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (3), L423-L425 (1990).
"Optical Characterization Of Single-Crystal 2h-Sns2 Synthesized By The Chemical Vapor Transport Method At Low-Temperatures"
J. Phys. D-Appl. Phys. 23 (6), 719-723 (1990).
"Valence Band Offsets Of The Inxga1-Xas/Gaas Strained-Layer Superlattice"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (4), L556-L558 (1990).
"Electronic-Structure Of An Inas Monomolecular Plane In Gaas"
Phys. Rev. B 42 (5), 3064-3068 (1990).
"Demonstrating Possession Without Revealing Factors And Its Application"
Lect. Notes Comput. Sci. 453, 273-293 (1990).
"Predicted Performance Of Quantum-Well Gaas-(Gaal)As Optical Amplifiers"
IEEE J. Quantum Electron. 26 (11), 1910-1917 (1990).
"Possibility Of Magnetic Ordered States In Semiconductor Quantum Dot System"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (12), L2463-L2465 (1990).
"Optical And Electrical-Properties Of Ytterbium-Doped Gaas Grown By Metalorganic Chemical Vapor-Deposition"
J. Appl. Phys. 68 (7), 3390-3393 (1990).
"Selective Chemical Etching Of Latent Compositional Microstructures In Sputtered Co-Cr Films"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 29 (9), 1705-1710 (1990).
"Room-Temperature Observation Of Intra-4f-Shell Photoluminescence Of Nd-3+ Ions Doped In Gap By Metalorganic Chemical Vapor-Deposition"
Inst. Phys. Conf. Ser. (106), 913-913 (1990).
"Photon-Assisted Macroscopic Quantum Tunneling In A Small Josephson Junction"
Physica B 165, 959-960 (1990).
"Electronic-Structure Of Sigma-Conjugated High Polymers"
Abstr. Pap. Am. Chem. Soc. 200, 66-POLY (1990).
"Theoretical-Study On The Electronic-Structure Of Si-Ge Copolymers"
J. Am. Chem. Soc. 112 (13), 5043-5052 (1990).
"The Effect Of Ejection Angle In Ion-Beam Sputter Deposition Of Superconducting Amorphous Beryllium Film"
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 29 (3), 500-506 (1990).
"Resonant Tunneling Through One-Dimensional And Zero-Dimensional States Constricted By Alxga1-Xas/Gaas/Alxga1-Xas Heterojunctions And High-Resistance Regions Induced By Focused Ga Ion-Beam Implantation"
Phys. Rev. B 41 (8), 5459-5462 (1990).
"Electron Effective-Mass Modulation Transistor"
J. Appl. Phys. 67 (4), 2171-2173 (1990).
"Electronic States In An Algaas-Gaas Modulation-Doped Heterointerface With A 10 Nm-Order Periodic Structure"
Surf. Sci. 228 (1-3), 280-282 (1990).
"Selective Growth Of Sensory Nerve-Fibers On Metal-Oxide Pattern In Culture"
Dev. Brain Res. 51 (1), 128-131 (1990).
"Density Of States Of An Alas-Gaas Fractional Superlattice In A Modulation-Doped Structure"
Appl. Phys. Lett. 57 (20), 2101-2103 (1990).
"Electronic State Of Alas/Gaas Vertical Superlattice In Modulation Doped Structure"
Inst. Phys. Conf. Ser. (106), 869-874 (1990).
"Mobility Modulation On A Modulation-Doped Structure With An Alas/Gaas Fractional Layer Superlattice"
Appl. Phys. Lett. 57 (8), 804-806 (1990).
"Standard Quantum Limit And Squeezing Of Mesoscopic Tunneling Current"
Physica B 165, 981-982 (1990).
"Probability-Density-Function Description Of Mesoscopic Normal Tunnel-Junctions"
Phys. Rev. B 42 (5), 3087-3099 (1990).
"Nonequilibrium Open-System Theory For Continuous Photodetection Processes - A Probability-Density-Functional Description"
Phys. Rev. A 41 (7), 3875-3890 (1990).
"Continuous State Reduction Of Correlated Photon Fields In Photodetection Processes"
Phys. Rev. A 41 (11), 6331-6344 (1990).
"Quantum-Theory For Continuous Photodetection Processes"
Phys. Rev. A 41 (7), 3891-3904 (1990).
"Exact Time-Domain Description Of The Crossover From Random To Coulomb-Regulated Single-Electron Tunneling In Ultrasmall Normal Tunnel-Junctions"
Phys. Rev. B 41 (5), 3082-3086 (1990).
"High-Speed Ingaalas Inalas Multiple Quantum-Well Optical Modulators"
J. Lightwave Technol. 8 (7), 1027-1032 (1990).
"Self-Phase-Modulation-Controlled Passively Mode-Locked Dye-Laser"
Opt. Lett. 15 (17), 965-967 (1990).
"Femtosecond Squeezed-Vacuum-State Generation In Mode-Locked Soliton Lasers"
Phys. Rev. A 42 (9), 5667-5674 (1990).
"Limits On Tradeoffs Between 3rd-Order Optical Nonlinearity, Absorption Loss, And Pulse Duration In Self-Induced Transparency And Real Excitation"
Phys. Rev. A 42 (3), 1699-1702 (1990).
"Effective Masses Of Quasi-2-Dimensional Electron-Gas In Si-Atomic Layer Doped Gaas"
Inst. Phys. Conf. Ser. (106), 429-434 (1990).
"Subband Mobility Of Quasi-2-Dimensional Electrons In Si Atomic Layer Doped Gaas"
Appl. Phys. Lett. 57 (10), 1022-1024 (1990).
"Cold Nuclear-Fusion Induced By Controlled Out-Diffusion Of Deuterons In Palladium"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (4), L666-L669 (1990).
"Rheed Observation During Migration-Enhanced Epitaxy On Misoriented Substrates"
Inst. Phys. Conf. Ser. (112), 73-78 (1990).
"Replacement Of Group-Iii Atoms On The Growing Surface During Migration-Enhanced Epitaxy"
J. Appl. Phys. 68 (4), 1610-1615 (1990).
"Quantum-Mechanical Limit In Optical-Precision Measurement And Communication"
Prog. Optics 28, 87-179 (1990).
"Decomposition Of Arsine And Trimethylarsenic On Gaas Investigated By Surface Photoabsorption"
Jpn. J. Appl. Phys. Part 2 - Lett. 29 (8), L1353-L1356 (1990).
"Optical Nonlinearity Of Cdse Microcrystallites In A Sputtered Sio2 Film"
Appl. Phys. Lett. 57 (23), 2393-2395 (1990).