▼ Ordered by first author
"Nonlinear Absorption In N-I-P-I Mqw Structures"
IEEE J. Quantum Electron.25 (10), 2135-2141 (1989).
"Improvement Of Optical Nonlinear Response In Gaas/Algaas Nipi-Mqw Structure With Au Ohmic Contact"
Electron. Lett.25 (18), 1212-1214 (1989).
"Facet Growth Of Algaas On Gaas With Sio2 Gratings By Mocvd And Applications To Quantum Well Wires"
J. Cryst. Growth98 (4), 646-652 (1989).
"Synthesis Of Organopolysilanes Using A Crown Ether"
J. Chem. Soc.-Chem. Commun. (8), 466-467 (1989).
"New Gaas Quantum Wires On (111)B Facets By Selective Mocvd"
Electron. Lett.25 (6), 410-412 (1989).
"Lateral Interface Mixing In Gaas Quantum Well Wire Arrays"
Appl. Phys. Lett.55 (19), 1958-1959 (1989).
"Quantum-Nondemolition Measurement Of Optical Solitons"
J. Opt. Soc. Am. B-Opt. Phys.6 (6), 1138-1148 (1989).
"Observation Of Gaas-Alxga1-Xas Heterostructures And Quantum-Well-Wire Structures Using Backscattered Electron Image"
Journal Of Electron Microscopy Technique12 (1), 60-64 (1989).
"Conductance Characteristics Of Ballistic One-Dimensional Channels Controlled By A Gate Electrode"
Appl. Phys. Lett.54 (25), 2556-2558 (1989).
"Electronic Transport Through Very Short And Narrow Channels Constricted In Gaas By Highly Resistive Ga-Implanted Regions"
Phys. Rev. B39 (8), 5535-5537 (1989).
"Film Deposition Temperature-Dependence Of Electron-Mobility For Accumulation-Mode Inp Metal-Insulator-Semiconductor Field-Effect Transistors"
J. Appl. Phys.65 (3), 1328-1337 (1989).
"New Inelastic Electron-Tunneling Spectrometer With An Absolute Peak Intensity"
Rev. Sci. Instrum.60 (6), 993-996 (1989).
"Maxwell-Bloch Turbulence"
Prog. Theor. Phys. Suppl. (99), 295-324 (1989).
"Quantum Nondemolition Measurement Of Photon Number In A Lossy Optical Kerr Medium"
Phys. Rev. A39 (2), 675-682 (1989).
"Optimized Stoneley Wave Device By Proper Choice Of Glass Overcoat"
IEEE Trans. Ultrason. Ferroelectr. Freq. Control36 (2), 159-167 (1989).
"Anisotropic Lower Critical-Field Of Single-Crystal Ba2ycu3oy"
Physica C159 (4), 483-487 (1989).
"Band Structures Of Ga-Ge-As-Ge And In-Ge-As-Ge Superlattices"
Solid State Commun.69 (9), 869-872 (1989).
"Anisotropic Resistivity In The Two-Dimensional Metal (La1-Xsrx)2cuo4"
Physica C160 (1), 35-41 (1989).
"Coupled Phase-Shift Distributed-Feedback Semiconductor-Lasers For Narrow Linewidth Operation"
IEEE J. Quantum Electron.25 (4), 678-683 (1989).
"Surface-Tension Of Pb0.8sn0.2te Melt And The Effect Of Marangoni Convection In Microgravity Crystal-Growth"
J. Cryst. Growth96 (4), 953-956 (1989).
"Broadened Resistive Transition Under Magnetic-Field And And Its Mechanism In Single Crystalline (La,Sr)2cuo4"
Physica C162, 1017-1018 (1989).
"Broadening Mechanism Of Resistive Transition Under Magnetic-Field In Single Crystalline (La1-Xsrx)2cuo4"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (4), L555-L556 (1989).
"Suppression Of Acoustic Phonon-Scattering In Two-Dimensional Electron-Gas On (Inas)1(Gaas)1/Inp Heterointerfaces"
Appl. Phys. Lett.54 (24), 2414-2416 (1989).
"Optical Dephasing And Orientational Relaxation Of Wannier-Excitons And Free-Carriers In Gaas And Gaas/Alxga1-Xas Quantum-Wells"
Fertkorperprobleme-Adv. Solid State Phys.29, 157-181 (1989).
"Excitonic And Nonlinear-Optical Properties Of Dielectric Quantum-Well Structures"
Phys. Rev. B40 (18), 12359-12381 (1989).
"Interacting Hole-Spin Model For Oxide Superconductors - Nmr Relaxation Rate"
Physica C162, 1505-1506 (1989).
"Interacting Hole-Spin Model For Oxide Superconductors"
Phys. Rev. B39 (10), 6600-6606 (1989).
"Extremely Slow Energy Relaxation Of A Two-Dimensional Exciton In A Gaas Superlattice Structure"
Phys. Rev. B40 (3), 1685-1691 (1989).
"Observation Of Amplitude Squeezing From Semiconductor-Lasers By Balanced Direct Detectors With A Delay-Line"
Opt. Lett.14 (19), 1045-1047 (1989).
"Algaas/Gaas Heterojunction Bipolar-Transistors With Heavily C-Doped Base Layers Grown By Flow-Rate Modulation Epitaxy"
Appl. Phys. Lett.54 (1), 39-41 (1989).
"Superconducting Fluctuation In Ba2[Y,Ln]Cu3o7 Measured By Magnetoresistance"
Physica C162, 371-372 (1989).
"Cw Photon-Echo"
Phys. Rev. Lett.63 (7), 754-757 (1989).
"Mocvd Growth And Pl-Characteristics Of Nd Doped Gaas"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (11), L2098-L2100 (1989).
"Angle Tuning Characteristics Of 2nd-Harmonic Generation Inktiopo4"
Appl. Phys. Lett.55 (19), 1943-1945 (1989).
"Fabrication And Characteristics Of Vertically Separated Interdigitated Array Electrodes"
J. Electroanal. Chem.267 (1-2), 291-297 (1989).
"Cyclic Voltammetric And Chronoamperometric Behavior Of Redox Soluble Species At Interdigitated Array Electrode"
Abstr. Pap. Am. Chem. Soc.197, 91-ANYL (1989).
"Impurity Doping Effect On The Dislocation Density In Gaas On Si (100) Grown By Migration-Enhanced Epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (11), L1877-L1879 (1989).
"Pattern-Recognition With A Bidirectionally Coupled Nonlinear-Optical-Element System"
Opt. Lett.14 (17), 925-927 (1989).
"Pitchfork Bifurcation And All-Optical Digital Signal-Processing With A Coupled-Element Bistable System"
Opt. Lett.14 (1), 72-74 (1989).
"Cooperative Dynamics And Functions In A Collective Nonlinear Optical-Element System"
Phys. Rev. A39 (10), 5209-5228 (1989).
"Pulse Energy Gain Saturation In Subpicosecond And Picosecond Pulse Amplification By A Traveling-Wave Semiconductor-Laser Amplifier"
IEEE Photonics Technol. Lett.1 (10), 297-299 (1989).
"Structural Design For Polarization-Insensitive Traveling-Wave Semiconductor-Laser Amplifiers"
Opt. Quantum Electron.21, S47-S58 (1989).
"Noninteger Inas Monolayer Well Inas/Gaas Single Quantum Well Structures Grown By Metalorganic Chemical Vapor-Deposition - Comment"
Appl. Phys. Lett.55 (16), 1689-1689 (1989).
"Inas Monomolecular Plane In Gaas Grown By Flow-Rate Modulation Epitaxy"
J. Appl. Phys.66 (2), 851-855 (1989).
"Formation Of A Glassy Solid By Computer-Simulation"
Phys. Rev. B40 (13), 9167-9175 (1989).
"Molecular-Dynamic Studies Of Monatomic Glasses - How Is Glass-Transition Simulated By Computer"
J. Chem. Phys.90 (11), 6627-6631 (1989).
"Microcrystallite Size Dependence Of Absorption And Photoluminescence Spectra In Cdsxse1-X-Doped Glass"
Appl. Phys. Lett.55 (15), 1519-1521 (1989).
"Electronic-Structure And Stability Of An Al-Si Superlattice"
Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.3 (3), 287-291 (1989).
"Biexciton States In Semiconductor Quantum Dots And Their Nonlinear Optical-Properties"
Phys. Rev. B39 (14), 10206-10231 (1989).
"Intra-4f-Shell Luminescence Excitation And Quenching Mechanism Of Yb In Inp"
J. Appl. Phys.66 (10), 4941-4945 (1989).
"Temperature-Dependence Of Intra-4f-Shell Photoluminescence And Electroluminescence Spectra For Erbium-Doped Gaas"
J. Appl. Phys.65 (3), 1257-1260 (1989).
"Electronic-Structure Of Si-Skeleton Materials"
Phys. Rev. B39 (15), 11028-11037 (1989).
"Preparation Of A Novel Silicone-Based Positive Photoresist And Its Application To An Image Reversal Process"
Acs Symposium Series412, 175-188 (1989).
"Dependence Of Transient Resonant-Tunneling Characteristics On Barrier Thickness In Alas/Gaas Multiple-Quantum-Well Structures"
Phys. Rev. B39 (8), 5353-5360 (1989).
"Abinitio Studies On Silicon-Compounds.2. On The Gauche Structure Of The Parent Polysilane"
J. Am. Chem. Soc.111 (4), 1281-1285 (1989).
"Terrace Width Ordering Mechanism During Epitaxial-Growth On A Slightly Tilted Substrate"
J. Cryst. Growth94 (1), 46-52 (1989).
"Electronic States In Lateral Structures On Modulation-Doped Heterointerfaces"
Appl. Phys. Lett.55 (14), 1403-1405 (1989).
"Termination For The Direct Sum Of Left-Linear Term Rewriting-Systems - Preliminary Draft"
Lect. Notes Comput. Sci.355, 477-491 (1989).
"10(5) Times Biasing Current Improvement In An Electron Wave Interference Device With Vertical Superlattices"
IEEE Trans. Electron Devices36 (11), 2618-2618 (1989).
"Electron Wave Interference Device With Vertical Superlattices Working In Large Current Region"
Electron. Lett.25 (11), 728-730 (1989).
"Probability-Density-Functional Description Of Photoelectron Statistics"
Phys. Rev. A40 (2), 1096-1108 (1989).
"Optical Nonlinearities Of Excitonic Self-Induced-Transparency Solitons - Toward Ultimate Realization Of Squeezed States And Quantum Nondemolition Measurement"
Phys. Rev. Lett.62 (19), 2257-2260 (1989).
"Anomalous Distribution Of In Atoms In Gaas During Migration-Enhanced Epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (11), L2010-L2012 (1989).
"Step-Flow Growth On Vicinal Gaas-Surfaces By Migration-Enhanced Epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (8), L1456-L1459 (1989).
"An Electron Trap Related To Phosphorus Deficiency In High-Purity Inp Grown By Metalorganic Chemical Vapor-Deposition"
J. Appl. Phys.65 (8), 3072-3075 (1989).
"Optical Amplifiers"
Opt. Quantum Electron.21, R3-R3 (1989).
"Fundamentals Of Optical Amplifiers"
Opt. Quantum Electron.21, S1-S14 (1989).
"Annealing Properties Of Si-Atomic-Layer-Doped Gaas"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (10), L1689-L1692 (1989).
"Quantum Size Effects And Observation Of Microcrystallites In Colored Filter Glasses"
Appl. Phys. Lett.54 (16), 1495-1497 (1989).
"X-Ray-Diffraction Analysis Of One-Dimensional Quasiperiodic Superlattices Grown By Migration-Enhanced Epitaxy"
Jpn. J. Appl. Phys. Part 2 - Lett.28 (6), L1035-L1038 (1989).