Fellows
/Senior Distinguished
Researchers
/Distinguished
Researchers
- Senior Distinguished Researcher
Yoshitaka Taniyasu
- NTT Basic Research Laboratories
- Senior Distinguished Researcher
More Senior Distinguished Researchers
- Basic Research
More researchers on the field
- Basic Research Laboratories
More researchers belonging to the lab/center/dept
Research on functional materials for green innovation
Crystal growth of functional materials and their high-efficiency device applications toward sustainable society
In this page
Awards
- JSAP Prize (2019）
- International Workshop on Nitride Semiconductors (IWN) Best Paper Award (2012)
- The International Symposium on Compound Semiconductors (ISCS) Young Scientist Award (2011)
- The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, The Young Scientists' Award (2011)
- Semiconducting and Insulating Materials Conferences (SIMC) Young Scientist Award (2007)
Academic Activities
- Advisor, Solid State Physics and Applications Division, The Japan Society of Applied Physics（2018-）
- Program committee member, Conference on Lasers and Electro-Optics Pacific Rim（2013）
- Program committee member, Conference on Lasers and Electro-Optics（2009-2013）
- Program committee member, Second International Symposium on Growth of III-Nitrides（2006）
- Program committee member, International Workshop on Nitride Semiconductors（2006-2012）
Publications
Papers
- M. Hiroki, Y. Taniyasu, and K. Kumakura, "High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers", IEEE Electron Device Lett. 43, 350 (2022)
- S. Wang, J. Crowther, H. Kageshima, H. Hibino, and Y. Taniyasu, "Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moire Materials with Highly Convergent Interlayer Angles", ACS Nano 15, 14384 (2021).
- K. Hirama, Y. Taniyasu, H. Yamamoto, and K. Kumakura, "Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping", Appl. Phys. Lett. 116, 162104 (2020).
- S. Wang, A. E. Dearle, M. Maruyama, Y. Ogawa, S. Okada, H. Hibino, and Y. Taniyasu, "Catalyst-Selective Growth of Single-Orientation Hexagonal Boron Nitride toward High-Performance Atomically Thin Electric Barriers", Advanced Materials 31, 1900880 (2019).
- Y. Taniyasu and M. Kasu, "Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices", Appl. Phys. Lett. 99, 251112 (2011).
- Y. Taniyasu, M. Kasu, and T. Makimoto, "An aluminium nitride light-emitting diode with a wavelength of 210 nanometres", Nature 441, 325 (2006).
- Y. Taniyasu, M. Kasu, and N. Kobayashi, "Intentional control of n-type conduction for Si-doped AlN and AlXGa1-XN (0.42 < x < 1)", Appl. Phys. Lett. 81, 1255 (2002).
Keywords
Nitride semiconductors, Atomic-layer semiconductors, Crystal growth, Light-emitting devices, Electron devices