Result for "Electron devices",569

Overview of Device Physics Research

electron devices, such as ultimately-low-energy-consuming single-electron devices. We are also doing

https://www.rd.ntt/e/brl/result/activities/file/report99/E/dp/dp_overview.htm

Overview of Device Physics Research

Laboratory is responsible for creating novel electron devices indispensable for the technological foundation

https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan1e.htm

Microsoft Word - CV-AkiraFujiwara.doc

-dimensional structures  Silicon nanostructures and their application to nanodevices  Single-electron devices

https://www.rd.ntt/brl/people/afuji/CV-AkiraFujiwara.pdf

Long-distance transport of electron spins for spin-based logic devices｜NTT Basic Research Laboratories | NTT R&D Website

Long-distance transport of electron spins for spin-based logic devices｜NTT Basic Research

https://www.rd.ntt/e/brl/latesttopics/2016/03/latest_topics_201603082029.html

Overview of Device Physics Research

temperature operation of single electron devices, we are developing nanofabrication processes including

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report01_e.html

Overview of Quantum Electron Physics Research

mode on high- index crystal surfaces and application to novel electron devices, and observation of

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

High-speed single-electron transfer toward high-accuracy current standards｜NTT Basic Research Laboratories | NTT R&D Website

Research Laboratories have been developing single-electron devices that can manipulate and detect an

https://www.rd.ntt/e/brl/latesttopics/2014/10/latest_topics_201410061802.html

Pursuing Electric Current Standard Using Single-electron Transfer Devices through International Collaboration | NTT R&D Website

Pursuing Electric Current Standard Using Single-electron Transfer Devices through International

https://www.rd.ntt/e/research/JN202412_30711.html

国際会議招待講演一覧 (2004)

-Electron Devices fabricated by MOS Processes,” European Materials Research Society (E-MRS) Spring Meeting

https://www.rd.ntt/brl/result/activities/file/report04/data11.html

List of Invited Talks at International Conferences (2004)

-Electron Devices fabricated by MOS Processes,” European Materials Research Society (E-MRS) Spring Meeting

https://www.rd.ntt/e/brl/result/activities/file/report04/data11.html

Akira Fujiwara's HOME PAGE

nanodevices Single-electron devices and their applications Education 1991 M.S. in Applied Physics, The

https://www.rd.ntt/brl/people/afuji/

Akira Fujiwara | NTT R&D Website

Professor, Hokkaido University 2013.4-2014.3. Publications Books Single-electron logic devices, in "Silicon

https://www.rd.ntt/e/organization/researcher/superior/s_016.html

Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher｜NTT R&D Website

single-electron devices. ◆PROFILE： Researcher at Department of Physical Electronics, Tokyo Institute of

https://www.rd.ntt/e/basic_research/0002.html

Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher｜NTT R&D Website

single-electron devices. ◆PROFILE： Researcher at Department of Physical Electronics, Tokyo Institute of

https://www.rd.ntt/e/research/basic_research0002.html

Graphene p-n junction as an electronic beam splitter｜NTT Basic Research Laboratories | NTT R&D Website

-distance transport of electron spins for spin-based logic devices NTT Basic Research Laboratories (NTT-BRL

https://www.rd.ntt/e/brl/latesttopics/2015/09/latest_topics_201509041810.html

Overview of Quantum Physics and Electronics Research

quantum well structures, high-temperature electron devices, and short-wavelength light emitting devices

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Conferences -KN's HP-

Electron Subbands in Thin SOI　MOSFETs 2009 International Conference on Solid State Devices and Materials

https://www.rd.ntt/brl/people/knishi50/conference.html

Elucidation of Spin Wave Physics Using a Graphene Electron Interferometer｜NTT Basic Research Laboratories | NTT R&D Website

Physics Using a Graphene Electron Interferometer -Contributing to Magnonics toward Ultra-low-power Devices

https://www.rd.ntt/e/brl/latesttopics/2021/12/latest_topics_202112081339.html

Research>>New Applications -KN's HP-

electrons, we use single-electron devices. Among them, a one-by-one electron transfer device composed of

https://www.rd.ntt/brl/people/knishi50/research_application.html

Research>>Single electron -KN's HP-

.     Single electrons can be treated by various kinds of nanoscale devices called "single-electron devices

https://www.rd.ntt/brl/people/knishi50/research_SED.html