Result for "Atomic layer semiconductors",114

Distinguished Technical Member

flow-rate modulation epitaxy and the growth of atomic-layer structure, and in-situ optical monitoring

https://www.rd.ntt/e/brl/result/activities/file/report98/E/tokubetsu.e.html

Yoshitaka Taniyasu | NTT R&D Website

, Atomic-layer semiconductors, Crystal growth, Light-emitting devices, Electron devices Related Contents

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

Pioneering the Understanding and Functional Exploration of Carrier Dynamics in Atomic-layer Materials | NTT R&D Website

Pioneering the Understanding and Functional Exploration of Carrier Dynamics in Atomic-layer

https://www.rd.ntt/e/research/JN202505_33801.html

国際会議招待講演一覧（2010年）

epitaxial few-layer graphene on SiC", International Workshop on in situ characterization of near surface

https://www.rd.ntt/brl/result/activities/file/report10/data07.html

List of Invited Talks at International Conferences (2010)

epitaxial few-layer graphene on SiC", International Workshop on in situ characterization of near surface

https://www.rd.ntt/e/brl/result/activities/file/report10/data07.html

Successful nanowire lasing at room temperature in the optical communication wavelength range ｜NTT Basic Research Laboratories | NTT R&D Website

emission layer and the barrier layer, which is abrupt and undisturbed at the atomic level in a nanowire

https://www.rd.ntt/e/brl/latesttopics/2019/02/latest_topics_201902241146.html

Overview and Prospects for Research on Plasmons in Two-dimensional Semiconductor Systems | NTT R&D Website

-dimensionally confined electron systems in semiconductor heterostructures and in graphene, a single atomic layer

https://www.rd.ntt/e/research/JN202303_21252.html

Overview of Research in Laboratories

design at the atomic and molecular levels. This laboratory consists of three research groups

https://www.rd.ntt/e/brl/result/activities/file/report13/report00E.html

Overview of Research in Laboratories

design at the atomic and molecular levels. This laboratory consists of three research groups

https://www.rd.ntt/e/brl/result/activities/file/report14/report00E.html

Pioneering Valley Physics with Two-dimensional Semiconductors | NTT R&D Website

Pioneering Valley Physics with Two-dimensional Semiconductors | NTT R&D Website NTT R&D Website

https://www.rd.ntt/e/research/JN202604_38943.html

Semiconductor quantum dots with single-atom precision｜NTT Basic Research Laboratories | NTT R&D Website

or less. The MBE can control thickness of grown film at atomic layer precision. The single crystal

https://www.rd.ntt/e/brl/latesttopics/2014/06/latest_topics_201406300201.html

Research Activities in NTT Basic Research Laboratories

-structures at molecular and atomic levels and Quantum Information Technology based on quantum mechanical

https://www.rd.ntt/e/brl/result/activities/file/report01/BRLReports_E.pdf

First demonstration of nanowire lasers at telecom wavelengths and high-speed signal modulation｜NTT Basic Research Laboratories | NTT R&D Website

semiconductors is generally small at telecom bands. Achievements NTT Nanophotonics Center (located in Atsugi

https://www.rd.ntt/e/brl/latesttopics/2017/04/latest_topics_201704031636.html

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

https://www.rd.ntt/e/brl/group_introduction/group_001.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

and Y. Kobayashi "Insitu Monitoring And Control Of Atomic Layer Epitaxy By Surface Photoabsorption

https://www.rd.ntt/brl/result/publications/paper_1993.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

), 5138-5143 (1993). N. Kobayashi and Y. Kobayashi "Insitu Monitoring And Control Of Atomic Layer Epitaxy

https://www.rd.ntt/e/brl/result/publications/paper_1993.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

Lines From Nitrogen Atomic-Layer-Doped Gaas" Appl. Phys. Lett. 67 (5), 688-690 (1995). T. Makimoto and N

https://www.rd.ntt/brl/result/publications/paper_1995.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

Lines From Nitrogen Atomic-Layer-Doped Gaas" Appl. Phys. Lett. 67 (5), 688-690 (1995). T. Makimoto and N

https://www.rd.ntt/e/brl/result/publications/paper_1995.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Makimoto, N. Kobayashi, and Y. Horikoshi "Electron Conduction In An Atomic-Layer-Doped Gaas Plane" Jpn. J

https://www.rd.ntt/brl/result/publications/paper_1988.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Horikoshi "Electron Conduction In An Atomic-Layer-Doped Gaas Plane" Jpn. J. Appl. Phys. Part 2 - Lett. 27 (5

https://www.rd.ntt/e/brl/result/publications/paper_1988.html