Result for "Nitride semiconductors",186

Yoshitaka Taniyasu | NTT R&D Website

Awards JSAP Prize (2019） International Workshop on Nitride Semiconductors (IWN) Best Paper Award (2012

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

High-Temperature Operation of Nitride-Based HBTs

Kazuhide Kumakura and Toshiki Makimoto Materials Science Laboratory Nitride-based semiconductors are

https://www.rd.ntt/e/brl/result/activities/file/report05/report05.html

no_3_en.pdf

monolayer steps. We have successfully fabricated step-free surfaces of nitride semiconductors for the first

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_3_en.pdf

Nitride Heterojunction Bipolar Transistor with Regrown Base Layer

communications between the base stations for cellular phones. Compared with Si and GaAs, nitride semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report14.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength LED structure Top view of LED

https://www.rd.ntt/e/brl/result/activities/file/report06/k01.html

国際会議招待講演一覧（2012年）

", International Workshop on Nitride semiconductors, Sapporo, Japan (Oct. 2012). (9) T. Akasaka, Y. Kobayashi, C. H

https://www.rd.ntt/brl/result/activities/file/report12/data06.html

List of Invited Talks at International Conferences (2012)

on step-free GaN surface", International Workshop on Nitride semiconductors, Sapporo, Japan (Oct

https://www.rd.ntt/e/brl/result/activities/file/report12/data06e.html

谷保 芳孝 | NTT R&D Website

　International Workshop on Nitride Semiconductors (IWN) Best Paper Award 2011年　The International Symposium on

https://www.rd.ntt/organization/researcher/superior/s_030.html

Member - NTT Basic Research Laboratories

Taniyasu Aluminum Nitride (AlN) taniyasu.yoshitaka Koji Onomitsu III-V semiconductors Onomitsu.koji

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/list1.html

Overview of Quantum Optics and Optical Materials Research

structure in nitride semiconductors). Major results obtained this fiscal year 1999 are reported in the

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qp/qp_overview.htm

Step-free GaN Surfaces Fabricated by Selective-area Metalorganic Vapor Phase Epitaxy

technique can control the hetero-interfaces of nitride semiconductors in an atomic scale and realize high

https://www.rd.ntt/e/brl/result/activities/file/report09/k01.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength Aluminum Nitride Light

https://www.rd.ntt/e/brl/result/activities/file/report06/report02.html

Layered Boron Nitride as a Release Layer for Mechanical Transfer of GaN-Based Devices

nitride semiconductors of sufficient quality is problematic. Several techniques have been investigated to

https://www.rd.ntt/e/brl/result/activities/file/report11/report02.html

GaN-Based Vertical Cavity Surface Emitting Lasers

microcavities, because the exciton oscillator strength and binding energy of III-nitride semiconductors are

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report17.html

Welcome to Yoshitaka Taniyasu's Homepage

-nitride semiconductors by spectroscopic ellipsometry) 2001-2003 Research associate, NTT Basic research

https://www.rd.ntt/brl/people/taniyasu/

Distinguished Technical Members

microscopy (STM). His current interests are epitaxial growth of nitride semiconductors and nitride

https://www.rd.ntt/e/brl/result/activities/file/report00/E/member05_e.html

Step-free GaN films Grown by Selective-area Metalorganic Vapor Phase Epitaxy

Kasu Materials Science Laboratory Step-free surfaces of GaN-related nitride semiconductors have been

https://www.rd.ntt/e/brl/result/activities/file/report09/report04.html

5th NTT-BRL school at NTT Atsugi R&D Center

Devices using Group-III Nitride Semiconductors" --- Dr. Toshiki Makimoto     Group-III nitrides, such as

https://www.rd.ntt/brl/event/brlschool2009/outline06.html

国際会議招待講演一覧（2009）

: physics and device structure", SPIE Photonics West, San Jose, U.S.A. (Jan. 2009). (3) M. Kasu, "Nitride

https://www.rd.ntt/brl/result/activities/file/report09/data06.html

List of Invited Talks at International Conferences (2009)

: physics and device structure", SPIE Photonics West, San Jose, U.S.A. (Jan. 2009). (3) M. Kasu, "Nitride

https://www.rd.ntt/e/brl/result/activities/file/report09/data06.html

Distinguished Technical Member

). His current interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices

https://www.rd.ntt/e/brl/result/activities/file/report01/E/member05.html

Npn-type InGaN/GaN Nitride Heterojunction Bipolar Transistor (HBT)

Laboratory Wide-gap nitride semiconductors are promising materials for electronic devices that require high

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report14.html

Overview of Quantum Physics and Electronics Research

and correlation effects in high-mobility semiconductors, carrier interactions in bilayer (electron

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Anisotropic In-Plane Strains in Non-Polar Al1-xGaxN (11-20) Films (x<0.2)

nitride semiconductors, because of its high electrical and thermal conductivities and the smaller lattice

https://www.rd.ntt/e/brl/result/activities/file/report08/report04.html

News - NTT Basic Research Laboratories

2012.11.16, New Post-doctral: Ryan Banal 2012.10.19, International Workshop on Nitride Semiconductors

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/index-J.html

Microsoft PowerPoint - SP2010Digest_ms_en_01.ppt [互換モード]

-emitting devices and realizing the deep-UV LEDs. Aluminum nitride (AlN) is a direct-bandgap semiconductor

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/topics/taniyasu_e.pdf

Aiming to Become a Visible Researcher by Taking Up Challenges without Fear of Failure | NTT R&D Website

wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are being

https://www.rd.ntt/e/research/JN202306_22119.html

Nitride Heterojunction Bipolar Transistors for High-Power Applications

Physical Science Laboratory Compared with Si and GaAs, nitride semiconductors have high breakdown voltage

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report14.html

Distinguished Researcher

-bandgap nitride semiconductors. He was a visiting researcher at Ecole polytechnique federale de Lausanne

https://www.rd.ntt/e/brl/result/activities/file/report13/member07E.html

Distinguished Technical Member

). His current interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices

https://www.rd.ntt/e/brl/result/activities/file/report02/E/member05.html

国際会議招待講演一覧（2014年1月～2015年3月）

on Growth of Nitride Semiconductors (IDGN-2), Sendai, Japan (Oct. 2014). (14) Y. Ueno and K. Furukawa

https://www.rd.ntt/brl/result/activities/file/report14/data10J.html

List of Invited Talks at International Conferences (Jan. 2014 - Mar. 2015)

on Growth of Nitride Semiconductors (IDGN-2), Sendai, Japan (Oct. 2014). (14) Y. Ueno and K. Furukawa

https://www.rd.ntt/e/brl/result/activities/file/report14/data09E.html

Emission Mechanism of AlN Deep-Ultraviolet Light-Emitting Diode

weak from the C-plane but strong from the A-plane for AlN. For nitride semiconductors, like AlN and GaN

https://www.rd.ntt/e/brl/result/activities/file/report10/report04.html

Distinguished Researchers

growth and device application of wide bandgap nitride semiconductors. He was a visiting researcher at

https://www.rd.ntt/e/brl/result/activities/file/report12/member08e.html

High Performance Nitride-Based Heterojunction Bipolar Transistors on GaN Substrates

Makimoto Materials Science Laboratory There are large mismatches between III-nitride semiconductors and

https://www.rd.ntt/e/brl/result/activities/file/report08/report03.html

Distinguished Technical Member

of nitride semiconductors and nitride semiconductor devices. He is an associate editor of Japan

https://www.rd.ntt/e/brl/result/activities/file/report03/E/member05.html

Distinguished Researchers

. Since then, he has been engaged in research on wide-bandgap nitride semiconductors. He was a visiting

https://www.rd.ntt/e/brl/result/activities/file/report14/member07E.html

国際会議招待講演一覧　（2003年度）　III．量子電子物性関連

Nitride Heterojunction Bipolar Transistors”, 2003 Asia-Pacific Workshop on Fundamental and Application of

https://www.rd.ntt/brl/result/activities/file/report03/J/data14.html

List of Invited Talks at International Conferences (Fiscal 2003) III. Quantum Electron Physics

. Makimoto, K. Kumakura, and N. Kobayashi, “npn-Type Nitride Heterojunction Bipolar Transistors”, 2003 Asia

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data14.html

Doping Control of AlInN/GaN Lattice-Matched Heterostructure

-nitride semiconductors, AlInN is the only ternary alloy that can be grown lattice-matched to GaN at an In

https://www.rd.ntt/e/brl/result/activities/file/report12/report04e.html

Overview of Quantum Optics and Optical Materials Research

). (2) Optical properties in nitride-semiconductors and their device applications (optical properties of

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report15_e.html

Distinguished Researchers

research. His current interests are epitaxial growth and device application of nitride semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report11/member06.html

no_2_en.pdf

.jp Aluminum nitride (AlN) is a direct-bandgap semiconductor with a bandgap energy of 6 eV, the

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_2_en.pdf

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

diamond, as well as solar energy conversion devices using nitride semiconductors. Member Dr. Yoshitaka

https://www.rd.ntt/e/brl/group_introduction/group_001.html

Development of a groundbreaking process for release of GaN-based thin-film devices from substrates｜NTT Basic Research Laboratories | NTT R&D Website

release of GaN-based thin-film devices from substrates, where an extremely thin layer of boron nitride (BN

https://www.rd.ntt/e/brl/latesttopics/2012/04/latest_topics_201204120100.html

Overview of Quantum Physics and Electronics Research

our p-InGaN layer is good enough and wide-bandgap nitride semiconductors show promise for high-power

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report11.html

An InGaN-based horizontal cavity surface emitting laser diode

application to optoelectronic devices in the visible and UV ranges, because these semiconductors have wide and

https://www.rd.ntt/e/brl/result/activities/file/report04/report04.html

Overview of Quantum Physics and Electronics Research

conventional electronic and photonic device applications of nitride-based semiconductors, we demonstrated novel

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report11_e.html

Graphene and 2D Materials

2D materials Oxide, nitride materials Members Publications Contact English | 日本語 Graphene and 2D

https://www.rd.ntt/brl/group_introduction/shitsuko-g/graphene.html

In-house Award Winner's List (Fiscal 2002)

Band Engineering of Nitride Semiconductors" Feb. 12,2003 Award for Achievements by Director of Basic

https://www.rd.ntt/e/brl/result/activities/file/report02/E/data05.html

5th NTT-BRL school at NTT Atsugi R&D Center

Devices using Group-III Nitride Semiconductors by Dr. Toshiki Makimoto, NTT Basic Research Laboratories

https://www.rd.ntt/brl/event/brlschool2009/program.html

Overview of Research in Laboratories

inorganic materials, such as semiconductors, to organic materials, such as neurotransmitters. The

https://www.rd.ntt/e/brl/result/activities/file/report04/report01.html

Award Winners’ List (Fiscal 2012)

using low-energy electron microscopy Sep. 27, 2012 International Workshop on Nitride Semiconductors 2012

https://www.rd.ntt/e/brl/result/activities/file/report12/data03e.html

Overview of Quantum Electron Physics Research

) Electronic device physics, such as carrier transport in nitride FETs and HBTs. (3) Impurity doping into wide

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report11.html

List of Invited Talks at International Conferences (2007)

, Matsushima, Japan (Mar. 2007). (3) K. Kumakura, A. Nisikawa, and T. Makimoto, "Nitride-based Heterojunction

https://www.rd.ntt/e/brl/result/activities/file/report07/data09.html

Overview of Research in Laboratories

research groups covering from thin film materials, such as nitride semiconductors, diamond, graphene, and

https://www.rd.ntt/e/brl/result/activities/file/report11/report01.html

Overview of Research in Laboratories

investigating a wide range of materials such as nitride semiconductors, graphene, superconductors, and

https://www.rd.ntt/e/brl/result/activities/file/report12/report01e.html

国際会議招待講演一覧（2007）

Forces, Matsushima, Japan (Mar. 2007). (3) K. Kumakura, A. Nisikawa, and T. Makimoto, "Nitride-based

https://www.rd.ntt/brl/result/activities/file/report07/data08.html

List of In-House Award Winners

. Onomitsu H. Yamaguchi Proposal for dynamic phononic crystal using compound semiconductors and its

https://www.rd.ntt/e/brl/result/activities/file/report14/data05E.html

In-house Award Winners’ List (Fiscal 2011)

Commercialization of high quality nitride semiconductor epitaxial wafers for high power applications Oct. 21,2011

https://www.rd.ntt/e/brl/result/activities/file/report11/data02.html

Research Activities in NTT Basic Research Laboratories Vol. 24 (2013)

Materials Science Laboratory Single-Crystal Cubic Boron Nitride Thin Film Growth by Ion-Beam-Assisted

https://www.rd.ntt/e/brl/result/activities/file/report13/2013_E.html

N-Face GaN (0001) Films with Hillock-free Smooth SurfacesGrown by Group-III-source Flow-rate Modulation Epitaxy

Laboratory Low incorporation efficiency of nitrogen atoms has been a problem in the growth of nitride

https://www.rd.ntt/e/brl/result/activities/file/report15/report02E.html

Hideki Yamamoto - Senior distinguished researcher

. Akasaka and H. Yamamoto: Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic

https://www.rd.ntt/brl/people/hideki/E/result.html

NTT物性科学基礎研究所 上席特別研究員 山本秀樹

. Akasaka and H. Yamamoto: Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic

https://www.rd.ntt/brl/people/hideki/result.html

Contents

Nonmagnetic Semiconductors Overview of Quantum Physics and Electronics Research Imaging of Zero-Dimensional

https://www.rd.ntt/e/brl/result/activities/file/report01/E/2001_e.html

no_4_en.pdf

akasaka@will.brl.ntt.co.jp The hexagonal boron nitride (h-BN) is promising material for optical device

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_4_en.pdf

Distinguished Researchers

interests are epitaxial growth and device application of nitride semiconductors, especially aluminum nitride

https://www.rd.ntt/e/brl/result/activities/file/report10/member06.html

Distinguished Technical Member

fabrication, widegap semiconductors such as aluminum nitride (AlN) and diamond. He received Electronic

https://www.rd.ntt/e/brl/result/activities/file/report05/member05.html

Distinguished Researchers

devices using nitride semiconductors. He was a visiting researcher at Paul-Drude-Institute, Germany during

https://www.rd.ntt/e/brl/result/activities/file/report15/member07E.html

Distinguished Researchers

studying the electronic properties of nitride semiconductors from The University of Warwick, U.K., in 2004

https://www.rd.ntt/e/brl/result/activities/file/report16/member07E.html

Overview of transistor technology and NTT's R&D on the world's fastest transistor｜NTT R&D Website

). If we look at the structure of a transistor, it consists of p-type semiconductors, which have

https://www.rd.ntt/e/communication_device/0003.html

List of Visitor's Talks (Fiscal 2002) III. Quantum Electron Physics

nitride and other III-V semiconductors for device applications" Aug. 20 Dr. Nicolas Freytag Max Planck

https://www.rd.ntt/e/brl/result/activities/file/report02/E/data09.html

Distinguished Technical Member

of nitride semiconductors and its application to devices. He is a member of technology evaluation

https://www.rd.ntt/e/brl/result/activities/file/report04/member05.html

薄膜材料研究グループ｜NTT物性科学基礎研究所｜NTT R&D Website

. Yamamoto Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy

https://www.rd.ntt/brl/group_introduction/group_001.html

AlGaN/GaN HEMTs Epitaxially Grown on Single-Crystal Diamond

, due to the difference in the crystal structures of nitride semiconductors and diamond, single-crystal

https://www.rd.ntt/e/brl/result/activities/file/report10/report05.html

Overview of Research in Laboratories

research groups covering from thin film materials, such as nitride semiconductors, diamond, graphene, and

https://www.rd.ntt/e/brl/result/activities/file/report09/report01.html

Overview of Research in Laboratories

groups covering from thin film materials, such as nitride semiconductors, diamond, graphene, and

https://www.rd.ntt/e/brl/result/activities/file/report10/report01.html

来訪者による講演一覧　（2002年度）　III.　量子電子物性関連

characterization of nitride and other III-V semiconductors for device applications」 8月20日 Dr. Nicolas Freytag Max

https://www.rd.ntt/brl/result/activities/file/report02/J/data09.html

窒化物半導体HBTの高温動作特性

, and T. Makimoto, Int. Workshop on Nitride Semiconductors 2004, P5.1, Pittsburgh, USA, 2004; J. Crystal

https://www.rd.ntt/brl/result/activities/file/report05/report05.html

Npn型InGaN/GaN窒化物半導体へテロ接合バイポーラトランジスタ（HBT）

International Conference on Nitride Semiconductors (ICNS-5), Nara Japan, May 2003. [4] T. Makimoto et al

https://www.rd.ntt/brl/result/activities/file/report02/J/report14.html

5th NTT-BRL School

-III Nitride Semiconductors". Dr. Hiroshi Yamaguchi talked about the "Micro/nanomechanical Devices

https://www.rd.ntt/e/brl/result/activities/file/report09/data02.html

Overview of Quantum Optics and Optical Materials Research

radiation and its application. Optical Device Physics Research Group (1) Optical properties in nitride

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report16.html

特別研究員

) Young Scientist Award、平成24年にInternational Workshop on Nitride Semiconductors (IWN2012) Best Paper Award

https://www.rd.ntt/brl/result/activities/file/report12/member08.html

Hideki Yamamoto - Senior distinguished researcher

). Appl. Phys. Express 105, 193509 (2014). Nucleus and spiral growth mechanisms of nitride semiconductors

https://www.rd.ntt/brl/people/hideki/E/

Publications - NTT Basic Research Laboratories

Nitride Semiconductors and Its Application to Heterojunction Bipolar Transistors Toshiki Makimoto and

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/new1001003.html

特別研究員

Scientist Award、平成24年にInternational Workshop on Nitride SemiconductorsにてBest Paper Awardを受賞。応用物理学会会員。 熊田　倫雄

https://www.rd.ntt/brl/result/activities/file/report13/member07J.html

Overview of Quantum Optics and Optical Materials Research

quantum dots & wires. (2) Optical properties in nitride-semiconductors and their device applications. (3

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report15.html

Overview of Quantum Physics and Electronics Research

as carrier transport in nitride FETs and HBTs. (3) Impurity doping into wide-bandgap semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report11.html

Overview of Quantum Optics and Optical Materials Research

control of excitonic and spin states in quantum dots & wires. (２) Optical properties in nitride

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report16.html

国際会議招待講演一覧（2010年）

) substrate", The 37th International Symposium on Compound Semiconductors, Takamatsu, Japan (June 2010). (7) K

https://www.rd.ntt/brl/result/activities/file/report10/data07.html

List of Invited Talks at International Conferences (2010)

) substrate", The 37th International Symposium on Compound Semiconductors, Takamatsu, Japan (June 2010). (7) K

https://www.rd.ntt/e/brl/result/activities/file/report10/data07.html

Polarized Emission of AlN Deep-UV LED by a Negative Crystal-field Splitting Energy

Materials Science Laboratory Aluminum nitride (AlN) is a direct-bandgap semiconductor with a bandgap energy

https://www.rd.ntt/e/brl/result/activities/file/report07/report02.html

Research Activities in NTT Basic Research Laboratories

). His current interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices

https://www.rd.ntt/e/brl/result/activities/file/report01/BRLReports_E.pdf

BRLReports_E.pdf

are epitaxial growth of nitride semiconductors and nitride semiconductor devices. He is a member of

https://www.rd.ntt/e/brl/result/activities/file/report02/BRLReports_E.pdf

Research Groups | NTT Basic Research Laboratories | NTT R&D Website

Laboratory Thin-Film Materials Research Group Our research targets nitride (AlN, GaN, InN, BN) and diamond

https://www.rd.ntt/e/brl/group_introduction/

BRLReports_E.pdf

interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices. He is an

https://www.rd.ntt/e/brl/result/activities/file/report03/BRLReports_E.pdf

Poster presentaion - SciencePlaza 2009 - NTT Basic Reseach Laboratories

characteristics - PDF M. Kasu / M.Kubovic 2 Aluminium nitride light-emitting diodes at 210 nm - Increased emission

https://www.rd.ntt/brl/event/splaza2009/poster_e.html

国際会議招待講演一覧　（2001年度）　III．量子電子物性関連

International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), Santa Fe, USA (August

https://www.rd.ntt/brl/result/activities/file/report01/J/data14.html

List of Invited Talks at International Conferences III. Quantum Electron Physics

quantum dot", The 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS

https://www.rd.ntt/e/brl/result/activities/file/report01/E/data14.html

Distinguished Technical Member

nanostructure fabrication and widegap semiconductors. His current interests are aluminum nitride (AlN) deep

https://www.rd.ntt/e/brl/result/activities/file/report06/member05.html