Result for "Crystal growth",343

Microsoft PowerPoint - SP2010Digest_ms_en_03.ppt [互換モード]

growth were obtained on a single substrate. Surface supersaturation (driving force of crystal growth) was

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/topics/akasaka_e.pdf

Overview of Quantum Electron Physics Research

semiconductor structures fabricated by high-quality semiconductor crystal growth and advanced device fabrication

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

Nucleus and Spiral Growth Mechanisms of GaN Studied by Selective-Area MOVPE

Kasu Materials Science Laboratory Crystal growth of semiconductor films generally proceeds under a

https://www.rd.ntt/e/brl/result/activities/file/report10/report03.html

Overview of Quantum Physics and Electronics Research

crystal growth and advanced device fabrication techniques, focuses on single-electron control, new

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Single-Crystal Cubic Boron Nitride Thin Film Growthby Ion-Beam-Assisted Molecular Beam Epitaxy

unsuccessful in the growth of single-crystal c-BN films because c-BN is a metastable phase at ambient

https://www.rd.ntt/e/brl/result/activities/file/report13/report01E.html

AlGaN/GaN HEMTs Epitaxially Grown on Single-Crystal Diamond

measurements, we confirmed the single-crystal growth of the AlGaN/GaN HEMT structure. Next, we confirmed the

https://www.rd.ntt/e/brl/result/activities/file/report10/report05.html

Welcome to Yoshitaka Taniyasu's Homepage

MOVPE on SiC (0001) substrate", Journal of Crystal Growth 298, 315 (2007). ·           Y. Taniyasu and A

https://www.rd.ntt/brl/people/taniyasu/

国際会議招待講演一覧（2010年）

) and their applications to aluminum nitride (AlN)", 16th International Conference on Crystal Growth

https://www.rd.ntt/brl/result/activities/file/report10/data07.html

List of Invited Talks at International Conferences (2010)

) and their applications to aluminum nitride (AlN)", 16th International Conference on Crystal Growth

https://www.rd.ntt/e/brl/result/activities/file/report10/data07.html

Step Dynamics Observed on Ultra-Flat Si Surfaces

perfectly flat terraces. Crystal growth starts at these atomic steps, so they play a pivotal role in

https://www.rd.ntt/e/brl/result/activities/file/report99/E/dp/dp4.htm

no_3_en.pdf

kind of crystal defect. Fig. 2: Growth spiral observed in a selective area having a screw- type

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_3_en.pdf

Single-crystal AlN (0001)/diamond (111) Heterostructure

single-crystal growth of AlN on diamond. However, to date, due to the difference in the crystal

https://www.rd.ntt/e/brl/result/activities/file/report09/report03.html

K_Tateno - Page: 2 of 3

AlInAs grown at high temperature by metalorganic chemical vapor deposition," J. Crystal Growth 220 (2000

https://www.rd.ntt/brl/people/ktateno/k_tateno_002.htm

Molecular Beam Epitaxial Growth of Hexagonal Boron Nitride on Ni(111) Substrate

properties, such as near-band-gap luminescence. [1] Y. Kobayashi et al., J. Crystal Growth 298 (2007) 325. [2

https://www.rd.ntt/e/brl/result/activities/file/report08/report05.html

Research Activities in NTT Basic Research Laboratories Vol. 24 (2013)

Materials Science Laboratory Single-Crystal Cubic Boron Nitride Thin Film Growth by Ion-Beam-Assisted

https://www.rd.ntt/e/brl/result/activities/file/report13/2013_E.html

Nanowire and photonic crystal realize a novel optical nanocavity｜NTT Basic Research Laboratories | NTT R&D Website

special crystal growth technique (vapor-liquid-solid method) was placed into a 150-nm-wide groove on the

https://www.rd.ntt/e/brl/latesttopics/2014/02/latest_topics_201402202003.html

Novel single crystal silicon｜NTT Basic Research Laboratories | NTT R&D Website

structure. The growth of this novel single crystal silicon will make it possible to form heterojunctions

https://www.rd.ntt/e/brl/latesttopics/1998/10/latest_topics_199810261756.html

BGaN Micro-Islands for Growth of High-Quality GaN Films

smooth surfaces, low TDD, and excellent electronic properties on sapphire in just a single crystal growth

https://www.rd.ntt/e/brl/result/activities/file/report05/report03.html

Overview of Research in Laboratories

-quality crystal growth and fine lithographic techniques. The five groups in our laboratory are working in

https://www.rd.ntt/e/brl/result/activities/file/report09/report01.html

Optical Nanocavity Formed by a Semiconductor Nanowire and a Si Photonic Crystal

Optical Nanocavity Formed by a Semiconductor Nanowire and a Si Photonic Crystal Optical Nanocavity

https://www.rd.ntt/e/brl/result/activities/file/report13/report27E.html

Yoshitaka Taniyasu | NTT R&D Website

/dept ▶ To the interview Research on functional materials for green innovation Crystal growth of

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

Overview of Research in Laboratories

both high-quality crystal growth and nanolithography techniques that we have developed to explore novel

https://www.rd.ntt/e/brl/result/activities/file/report14/report00E.html

Overview of Quantum Physics and Electronics Research

crystal growth (mechanism of GaN and facet-controlled crystal growth by MOCVD, high-concentration p-type

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report11_e.html

Microsoft PowerPoint - SP2010Digest_ms_en_02.ppt [互換モード]

structure Crystal structure n-type doping Si (250 meV) P-type doping Mg (630 meV) P (590 meV) B (370 meV

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/topics/hirama_e.pdf

In-situ Growth of Superconducting MgB2 Thin Films.

In-situ Growth of Superconducting MgB2 Thin Films. In-situ Growth of Superconducting MgB2 Thin

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report08.html

First demonstration of nanowire lasers at telecom wavelengths and high-speed signal modulation｜NTT Basic Research Laboratories | NTT R&D Website

a special crystal growth technique (vapor-liquid-solid method) was placed into a groove on the

https://www.rd.ntt/e/brl/latesttopics/2017/04/latest_topics_201704031636.html

Overview of Quantum Physics and Electronics Research

-quality GaN crystal growth by MOCVD and device processing technology. (２) GaN semiconductor electronic

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report11.html

Research Topics - NTT Basic Research Laboratories

superconductors(Japanese/English) Diamond semiconductor Single-crystal nitride growth on diamond(Japanese/English

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/new1001.html

Award Winners’ List (Fiscal 2010)

Japanese Association for Crystal Growth (JACG) M. Kasu Surface Growth Kinetics of Metalorganic Vapor Phase

https://www.rd.ntt/e/brl/result/activities/file/report10/data04.html

Award Winners’ List (Fiscal 2012)

whispering gallery mode cavities using crystal growth June 3, 2012 JSAP Young Scientist Award S. Tanabe Half

https://www.rd.ntt/e/brl/result/activities/file/report12/data03e.html

Overview of Research in Laboratories

promote research of nanoscale devices fabricated using high-quality crystal growth and fine lithographic

https://www.rd.ntt/e/brl/result/activities/file/report08/report01.html

Overview of Research in Laboratories

promote research of nanoscale devices fabricated using high-quality crystal growth and fine lithographic

https://www.rd.ntt/e/brl/result/activities/file/report07/report01.html

Overview of Research in Laboratories

of nanoscale devices fabricated using high-quality crystal growth and fine lithographic techniques

https://www.rd.ntt/e/brl/result/activities/file/report11/report01.html

Compound Semiconductor Device Research Group｜Device Technology Laboratories｜NTT R&D Website

communications applications but also for sensing and power electronics applications. ・Crystal growth and

https://www.rd.ntt/e/dtl/technology/compound_semiconductor_device_research_group_ntt_device_technology_laboratories_ntt_rd_website.html

Taking the Challenge to Create Novel High-temperature Superconductors and Access New Physical Phenomena by Using a Thin-film Growth Method sui generis | NTT R&D Website

of SrRuO3 were obtained until recently due to difficulty in crystal growth, research on physical

https://www.rd.ntt/e/research/JN202309_23098.html

Successful nanowire lasing at room temperature in the optical communication wavelength range ｜NTT Basic Research Laboratories | NTT R&D Website

crystal, deteriorating the lasing characteristics. Recently, a one-dimensional nanowire structure with a

https://www.rd.ntt/e/brl/latesttopics/2019/02/latest_topics_201902241146.html

国際会議招待講演一覧（2008）

on Crystal Growth and Technology, Sendai, Japan (May 2008). (6) Y. Kobayashi, T. Akasaka, and T

https://www.rd.ntt/brl/result/activities/file/report08/data09.html

List of Invited Talks at International Conferences (2008)

Crystal Growth and Technology, Sendai, Japan (May 2008). (6) Y. Kobayashi, T. Akasaka, and T. Makimoto

https://www.rd.ntt/e/brl/result/activities/file/report08/data10.html

Real-time Observation of Nanowire Formation by Means of GISAXS

larger permeability with the materials, and is often used for monitoring crystal growth in solid, liquid

https://www.rd.ntt/e/brl/result/activities/file/report04/report07.html

Growth of Graphene by Gas-source Molecular Beam Epitaxy

Growth of Graphene by Gas-source Molecular Beam Epitaxy Growth of Graphene by Gas-source Molecular

https://www.rd.ntt/e/brl/result/activities/file/report09/report06.html

Research Activities in NTT Basic Research Laboratories Vol. 26 (2015)

Materials Science Laboratory Ion-Irradiation Effect in Ion-beam-assisted MBE Growth of c-BN Films N-Face GaN

https://www.rd.ntt/e/brl/result/activities/file/report15/2015_E.html

Overview of Research in Laboratories

promote research of nanoscale devices fabricated using high-quality crystal growth and fine lithographic

https://www.rd.ntt/e/brl/result/activities/file/report10/report01.html

no_6_en.pdf

fmaeda@will.brl.ntt.co.jp We are aiming at creating single-crystal substrates of few-layer graphene (FLG

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_6_en.pdf

Hideki Yamamoto | NTT R&D Website

Crystal Growth 378, 184-188 (2013). Y. Krockenberger, H. Irie, O. Matsumoto, K. Yamagami, M. Mitsuhashi, A

https://www.rd.ntt/e/organization/researcher/superior/s_024.html

Contents

Nuclear Spins in a Nanoscale Device Ultrahigh-Q Photonic Crystal Nanocavity Realized with Locally

https://www.rd.ntt/e/brl/result/activities/file/report05/2005_E.html

山本 秀樹 | NTT R&D Website

Crystal Growth 378, 184-188 (2013). Y. Krockenberger, H. Irie, O. Matsumoto, K. Yamagami, M. Mitsuhashi, A

https://www.rd.ntt/organization/researcher/superior/s_024.html

Overview of Research in Laboratories

impact on future ICT society. Utilizing the high-quality crystal growth techniques and nanolithography

https://www.rd.ntt/e/brl/result/activities/file/report15/report00E.html

Ion-Irradiation Effect in Ion-beam-assisted MBE Growth of c-BN Films

Ion-Irradiation Effect in Ion-beam-assisted MBE Growth of c-BN Films Ion-Irradiation Effect in Ion

https://www.rd.ntt/e/brl/result/activities/file/report15/report01E.html

国際会議招待講演一覧（2013年）

, Japan (Aug. 2013). (6) F. Maeda, "Graphene Growth on Graphene by Molecular Beam Epitaxy", Crystal

https://www.rd.ntt/brl/result/activities/file/report13/data08J.html

List of Invited Talks at International Conferences (2013)

, Japan (Aug. 2013). (6) F. Maeda, "Graphene Growth on Graphene by Molecular Beam Epitaxy", Crystal

https://www.rd.ntt/e/brl/result/activities/file/report13/data07E.html

Overview of Materials Science Research

of thin-film growth technology for high-Tc superconductors using molecular beam epitaxy method. (4

https://www.rd.ntt/e/brl/result/activities/file/report98/E/busshitsu/bussitsu1e.htm

AlGaN Multi-Quantum-Well Ultraviolet Light Emitting Diode

discussed, practical verification had not been possible due to the difficulty of nitride crystal growth. By

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe2.htm

Hideki Yamamoto - Senior distinguished researcher

3d transition metal compounds, Journal of Crystal Growth 593, 126778/1-6 (2022). [4] . K

https://www.rd.ntt/brl/people/hideki/E/result.html

NTT物性科学基礎研究所 上席特別研究員 山本秀樹

novel magnetic materials--beyond 3d transition metal compounds, Journal of Crystal Growth 593, 126778/1

https://www.rd.ntt/brl/people/hideki/result.html

Publications - NTT Basic Research Laboratories

(2010) Heterostructure growth of a single-crystal hexagonal AlN(0001) layer on cubic diamond (111

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/new1001003.html

Ni (111) 基板上六方晶窒化ホウ素のMBE成長

. Crystal Growth 298 (2007) 325. [2] C.L. Tsai et al., J. Crystal Growth (in press). 図１ BN（膜厚 1000 Å）成長後

https://www.rd.ntt/brl/result/activities/file/report08/report05.html

Molecular Beam Epitaxy of High Quality Thin Films of Infinite Layer Cuprate Superconductor (Sr, La)CuO2

, their crystal structure is the simplest among all of the cuprate superconductors. However, the synthesis

https://www.rd.ntt/e/brl/result/activities/file/report11/report04.html

Award Winners’ List (Fiscal 2011)

Scientists’ Prize Y. Taniyasu Research on the crystal growth of AlN and its application to the

https://www.rd.ntt/e/brl/result/activities/file/report11/data01.html

Step-free GaN films Grown by Selective-area Metalorganic Vapor Phase Epitaxy

strongly desired for studying growth mechanisms and for achieving the abrupt hetero-interfaces necessary

https://www.rd.ntt/e/brl/result/activities/file/report09/report04.html

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

diamond, using our unique crystal growth technologies. Our mission is to discover novel properties of

https://www.rd.ntt/e/brl/group_introduction/group_001.html

N-Face GaN (0001) Films with Hillock-free Smooth SurfacesGrown by Group-III-source Flow-rate Modulation Epitaxy

Laboratory Low incorporation efficiency of nitrogen atoms has been a problem in the growth of nitride

https://www.rd.ntt/e/brl/result/activities/file/report15/report02E.html

List of Award Winners

Asia (IUMRS-ICA) K. Hirama Nitride/diamond heterostructure systems - from growth to devices - Oct. 31

https://www.rd.ntt/e/brl/result/activities/file/report14/data04E.html

Observation of one part in one hundred trillion meter mechanical vibration with a superconducting quantum interference device｜NTT Basic Research Laboratories | NTT R&D Website

device shown in Fig. 1 by using their original crystal growth technology. This device detects an

https://www.rd.ntt/e/brl/latesttopics/2008/09/latest_topics_200809010001.html

List of Visitors' Talks (Fiscal 2007)

Kyoto University "Growth of High-quality AlN on SiC (0001) by Step-height Control and Growth of Novel

https://www.rd.ntt/e/brl/result/activities/file/report07/data05.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

(12), 1209-1211 (1990). T. Fukui and H. Saito "Ideal Crystal-Growth From Kink Sites On A Gaas Vicinal

https://www.rd.ntt/brl/result/publications/paper_1990.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

-1211 (1990). T. Fukui and H. Saito "Ideal Crystal-Growth From Kink Sites On A Gaas Vicinal Surface By

https://www.rd.ntt/e/brl/result/publications/paper_1990.html

Publication

Review 16 Applied Physics Letters 15 Physica B 11 Journal of Crystal Growth 10 Physical Review Letters 9

https://www.rd.ntt/brl/result/activities/file/report98/J/data/newpublication.html

Contents

-confinement Effect Ultralarge Optomechanical Coupling in a Bi-layer Photonic Crystal Message from the Director

https://www.rd.ntt/e/brl/result/activities/file/report09/2009_E.html

Distinguished Technical Member

1985, he has engaged in epitaxial growth of III-V compound semiconductors using metalorganic vapor

https://www.rd.ntt/e/brl/result/activities/file/report01/E/member05.html

no_13_en.pdf

heterostructure during crystal growth can enhance the mechanical resonance response resulting in improved

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_13_en.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

, and T. Tanabe Fabrication of whispering gallery mode cavity using crystal growth Appl. Phys. Lett. 102

https://www.rd.ntt/brl/result/publications/paper_2013.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

crystal growth" Appl. Phys. Lett. 102 (21), 211105 (2013). N. Kumada, S. Tanabe, H. Hibino, H. Kamata, M

https://www.rd.ntt/e/brl/result/publications/paper_2013.html

List of Visitor's Talks

21 Dr. Noritaka Usami The University of Tokyo "Crystal growth and optical properties of SiGe/Si

https://www.rd.ntt/e/brl/result/activities/file/report99/E/data/seminar.htm

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Makimoto "Growth of nonpolar AlN (11(2)over-bar0) and (1(1)over-bar00) films on SiC substrates by flow-rate

https://www.rd.ntt/brl/result/publications/paper_2007.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

"Growth of nonpolar AlN (11(2)over-bar0) and (1(1)over-bar00) films on SiC substrates by flow-rate

https://www.rd.ntt/e/brl/result/publications/paper_2007.html

Publication

Review 16 Applied Physics Letters 15 Physica B 11 Journal of Crystal Growth 10 Physical Review Letters 9

https://www.rd.ntt/e/brl/result/activities/file/report98/E/data/publication.e.html

MBE Growth of Transition Metal Dichalcogenide Thin Films

MBE Growth of Transition Metal Dichalcogenide Thin Films MBE Growth of Transition Metal

https://www.rd.ntt/e/brl/result/activities/file/report14/report02E.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

twinning superlattice: Growth of new single crystal Si" Surf. Rev. Lett. 7 (5-6) 631-635 (2000). H. Hibino

https://www.rd.ntt/brl/result/publications/paper_2000.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

twinning superlattice: Growth of new single crystal Si" Surf. Rev. Lett. 7 (5-6) 631-635 (2000). H. Hibino

https://www.rd.ntt/e/brl/result/publications/paper_2000.html

Overview of Research in Laboratories

society. Utilizing the high-quality crystal growth techniques and nanolithography techniques that we have

https://www.rd.ntt/e/brl/result/activities/file/report16/report00E.html

Contents

Heterostructures Quantum Dot Laser Using Photonic Crystal Nanocavity From Science to Innovative Technology Member

https://www.rd.ntt/e/brl/result/activities/file/report06/2006_E.html

Contents

Laboratory Polarized Emission of AlN Deep-UV LED by a Negative Crystal-field Splitting Energy Doping of

https://www.rd.ntt/e/brl/result/activities/file/report07/2007_E.html

学術論文出版一覧

. Tsuji, T. Okajima, H. Mitani, and S. Mizuno, "Growth Dynamics of Single-layer Graphene on Epitaxial Cu

https://www.rd.ntt/brl/result/activities/file/report15/data10J.html

Publication List

. Uchida, M. Tsuji, T. Okajima, H. Mitani, and S. Mizuno, "Growth Dynamics of Single-layer Graphene on

https://www.rd.ntt/e/brl/result/activities/file/report15/data09E.html

Award Winner's List (Fiscal 2002)

and its application to the study of crystal growth processes" May 14,2002 The prize of the Japan

https://www.rd.ntt/e/brl/result/activities/file/report02/E/data04.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Watanabe, and A. Matsuda "Single-crystal growth of Bi2Sr2Ca2Cu3O10+delta (Bi-2223) by TSFZ method" J. Cryst

https://www.rd.ntt/brl/result/publications/paper_2001.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Watanabe, and A. Matsuda "Single-crystal growth of Bi2Sr2Ca2Cu3O10+delta (Bi-2223) by TSFZ method" J. Cryst

https://www.rd.ntt/e/brl/result/publications/paper_2001.html

Artificial Coordination Control in Copper Oxides by Molecular Beam Epitaxy- New Strategy for Material Synthesis -

high-Tc superconductors. They take two different crystal structures: K2NiF4 (6-fold Cu-O coordination

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report08.html

国際会議招待講演一覧　（2000年度）　Ⅰ.　デバイス物理関連

twinning superlattice: Growth of new single crystal Si", US-Japan seminar on Mesoscopic Phenomena on

https://www.rd.ntt/brl/result/activities/file/report00/J/data17.html

List of Invited Talks at International Conferences (Fiscal 2000) I. Device Physics

twinning superlattice: Growth of new single crystal Si", US-Japan seminar on Mesoscopic Phenomena on

https://www.rd.ntt/e/brl/result/activities/file/report00/E/data17_e.html

国際会議招待講演一覧（2012年）

. Hirama, M. Kasu, and Y. Taniyasu, "Nitride/diamond heterostructure: growth and device application", New

https://www.rd.ntt/brl/result/activities/file/report12/data06.html

As-grown Superconducting Pr2CuO4 Thin Films

problem arising from imperfection on the oxygen sub-lattice of the crystal. In particular

https://www.rd.ntt/e/brl/result/activities/file/report15/report06E.html

List of Invited Talks at International Conferences (2012)

. Kasu, and Y. Taniyasu, "Nitride/diamond heterostructure: growth and device application", New Diamond

https://www.rd.ntt/e/brl/result/activities/file/report12/data06e.html

High-Temperature Operation of Nitride-Based HBTs

, 2004; J. Crystal Growth 292 (2006) 155-158. [2]K. Kumakura and T. Makimoto, 2005 Int. Conference on

https://www.rd.ntt/e/brl/result/activities/file/report05/report05.html

Emission Mechanism of AlN Deep-Ultraviolet Light-Emitting Diode

that the emission intensity largely changes depending on the crystal planes of its surface. First, a C

https://www.rd.ntt/e/brl/result/activities/file/report10/report04.html

薄膜材料研究グループ｜NTT物性科学基礎研究所｜NTT R&D Website

growth diagram by MOVPE" J. Appl. Phys. 138 (11), 115102 (2025). Publications in 2024 K. Ebata, M. Hiroki

https://www.rd.ntt/brl/group_introduction/group_001.html

Contents

Semiconductor Micro/Nanomechanical Devices Spot-Size Converters for Photonic Crystal Waveguides Preface Member

https://www.rd.ntt/e/brl/result/activities/file/report02/E/2002_e.html

In-house Award Winners’ List (Fiscal 2010)

-crystal Lasers and Switches Jan.19, 2011 NTT Science and Core Technology Laboratory Group Director Award M

https://www.rd.ntt/e/brl/result/activities/file/report10/data05.html

no_2_en.pdf

because c-plane growth leads to lower defect density. However, because AlN has a negative crystal-field

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_2_en.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

"Heterostructure growth of a single-crystal hexagonal AlN(0001) layer on cubic diamond (111) surface" J. Appl. Phys

https://www.rd.ntt/brl/result/publications/paper_2010.html