Selected Publications

l G. Zhang, C. Rainville, A. Salmon, M. Takiguchi, K. Tateno, and H. Gotoh, “Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires,” ACS Nono 9(11) (2015) 10580–10589. l G. Zhang, K. Tateno, M.D. Birowosuto, M. Notomi, T. Sogawa, and H. Gotoh, “Controlled 1.1–1.6 μm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires ,” Nanotechnology 26, 115704 (2015) (9pp). l S. Sasaki, K. Tateno, G. Zhang, H. Pigot, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa, and K. Muraki, “Self-aligned gate-all-around InAs/InP core–shell nanowire field-effect transistors,” Japanese Journal of Applied Physics 54, 04DN04 (2015), 4 pages. l K. Tateno, G. Zhang, H. Gotoh, “Etching effect of tertiary-butyl chloride during InP-nanowire growth,” JCG 402 (2014) 299–303. l H. Okamoto, S. Suzuki, H. Narita, T. Tawara, K. Tateno, and H. Gotoh, “Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant,” JJAP 53 (2014) 06JG11. l M. D. Birowosuto, A. Yokoo, G. Zhang, K. Tateno, E. Kuramochi, H. Taniyama, M. Takiguchi, M. Notomi, "Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform," Nature Materials 13 (2014) 279-285. l K. Tateno, G. Zhang, H. Gotoh, “Growth of InP nanowires on graphene-covered Fe,” Japanese Journal of Applied Physics 53, 015504 (2014), 6 pages. l S. Sasaki, K. Tateno, G. Zhang, H. Suominen, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa, and K. Muraki, “Encapsulated gate-all-around InAs nanowire field-effect transistors,” APPLIED PHYSICS LETTERS 103, (2013) 213502. l G. Zhang, S. Sasaki, K. Tateno, H. Gotoh, and T. Sogawa, “Au-free InAs nanowires grown in In-particle-assisted vapor-liquid-solid mode: growth, structure, and electrical property” AIP Advances 3 (2013) 052107. l K. Tateno, D. Takagi, G. Zhang, H. Gotoh, H. Hibino and T. Sogawa, "VLS Growth of III-V Semiconductor Nanowires on Graphene Layers," MRS Proceedings (2012) mrss12-1439-aa04-11. l K. Tateno, G. Zhang, H. Gotoh, and T. Sogawa, “VLS Growth of Alternating InAsP/InP Heterostructure Nanowires for Multiple-Quantum-Dot Structures,” Nano Lett. 12 (2012) 2888-2893. l G. Zhang, K. Tateno, H. Gotoh, T. Sogawa, “Vertically aligned InP nanowires grown via the self-assisted vapor-liquid-solid mode,” Appl. Phys. Exp. 5 (2012) 055201-1-3. l K. Tateno, G. Zhang, H. Gotoh, T. Sogawa, "Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates," J. Nanotech. (2012) 890607, 8 pages . l T. Nishio, T. Kozakai, S. Amaha, M. Larsson, H. A Nilsson, H Q Xu, G. Zhang, K. Tateno, H.Takayanagi, and K. Ishibashi, “Supercurrent through InAs nanowires with highly transparent superconducting contacts,” Nanotechnology 22 (2011) 445701. l G. Zhang, K. Tateno, S. Suzuki, H. Gotoh, T. Sogawa, "Predominant Si Doping through Au Catalyst Particles in the Vapor－Liquid－Solid Mode over the Shell Layer via the Vapor-Phase Epitaxy Modeof InAs Nanowires," J. Phys. Chem. C 115 (2011) 2923-2930. l G. Zhang, K. Tateno, H. Gotoh, T. Sogawa, “<110>-Oriented In0.04Ga0.96As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor–Liquid–Solid Mode,” Appl. Phys. Express 3 (2010) pp.105002-1-3. l G. Zhang, K. Tateno, H. Gotoh, T. Sogawa, ” Towards New Low-dimensional Semiconductor Nanostructures and New Possibilities,” NTT Technical Review 8 (2010) 19-26. l G. Zhang, K. Tateno, H. Gotoh, H. Nakano,　“Parallel-aligned GaAs nanowires with <110> orientation laterally　grown on (311)B substrates by gold-catalyzed vapor-liquid-solid mode,” Nanotechnology 21 (2010) 095607-1-10. l G. Zhang, K. Tateno, H. Gotoh, T. Sogawa, H. Nakano, “Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate,” Jpn. J. Appl. Phys. 49 (2010) 015001-1-6. l G. Zhang, K. Tateno, H. Sanada, T. Tawara, H. Gotoh, H. Nakano, “Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect,” Appl. Phys. Lett. 95 (2009) 123104-1-3. l K. Tateno, G. Zhang, H. Nakano, "Growth of GaInAs/AlInAs Heterostructure Nanowires for Long-Wavelength Photon Emission," Nano Lett. 8 (2008) 3645-3650. l K. Ishikawa, N. Yamamoto, K. Tateno, Y. Watanabe, “Characterization of Individual GaAs/AlGaAs Self-Standing Nanowires by Cathodoluminescence Technique using Transmission Electron Microscope,” JJAP 47 (2008) 6596-6600. l G. Zhang, K. Tateno, T. Sogawa, H. Nakano, "Vertically aligned GaP/GaAs core-multishell nanowires epitaxially grown on Si substrate", Appl. Phys. Express 1 (2008) 064003. l K. Tateno, G. Zhang, H. Nakano, "InP nanostructures formed in GaP-based nanowires grown on Si(111) substrates", J. Cryst. Growth 310 (2008) 2966-2969. l G. Zhang, K. Tateno, T. Sogawa, H. Nakano, "Growth and characterization of GaP nanowires on Si substrate", J. Appl. Phys. 103 (2008) 014301. l K. Tateno, G. Zhang, T. Sogawa, H. Nakano, “Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires,” J. JAP. 46 (2007) L780-782. l H. Sanada, H. Gotoh, K. Tateno, H. Nakano, “Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires,” Jpn. J. Appl. Phys. 46 (2007) 2578-2580. l K. Tateno, H. Gotoh, Y. Watanabe , "Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires," Jpn. J. Appl. Phys. 45 (2006) 3568. l K. Tateno, H. Hibino, H. Gotoh,H. Nakano, "Vertical GaP nanowires arranged at atomic steps on Si(111) substrates," Appl. Phys. Lett. 89 (2006) 033114. l K. Tateno, H. Gotoh,H. Nakano, "Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse VLS Mechanism," Jpn. J. Appl. Phys. Lett. 44 (2005) L1553. l K. Tateno, H. Gotoh, Y. Watanabe、"Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates," Jpn. J. Appl. Phys. 44 (2005) L428. l K. Tateno, H. Gotoh, Y. Watanabe、"GaAs/AlGaA nanowires capped with AlGaAs layers on GaAs (311)B substrates," APL 85 (2004) 1808. l K. Tateno, and C. Amano, "Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition," J. Crystal Growth 220 (2000) 393. l K. Tateno, H. Uenohara, T. Kagawa, and C. Amano, "Characteristics of the GaInP burying layers grown by metalorganic chemical vapor deposition on mesa-patterned GaAs substrates," J. Crystal Growth 209 (2000) 605. l K. Tateno, H. Uenohara, T. Kagawa, and C. Amano, "GaInP burying growth by MOCVD for a refractive index guided BH-VCSEL," Inst. Phys. Conf. Ser. No 166: Chapter 6 (1999) 387. l K. Tateno, C. Amano, "Carbon doping and etching in GaInAsP on GaAs substrates using CBr4 by metalorganic chemical vapor deposition," J. Electron. Mater. 28 (1999) 63. l K. Tateno, and C. Amano, "Carbon and silicon doping in GaAs and AlAs grown on (311)-oriented GaAs substrates by metalorganic chemical vapor deposition," J. Crystal Growth 181 (1997) 33. l K. Tateno, Y. Ohiso, C. Amano, A. Wakatsuki, and T. Kurokawa, "Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition," Appl. Phys. Lett. 70 (1997) 3395. l K. Tateno, Y. Kohama, and C. Amano, "Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs," J. Crystal Growth 172 (1997) 5.