Result for "Nitride semiconductors",186

Yoshitaka Taniyasu | NTT R&D Website

Awards JSAP Prize (2019） International Workshop on Nitride Semiconductors (IWN) Best Paper Award (2012

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

High-Temperature Operation of Nitride-Based HBTs

Kazuhide Kumakura and Toshiki Makimoto Materials Science Laboratory Nitride-based semiconductors are

https://www.rd.ntt/e/brl/result/activities/file/report05/report05.html

no_3_en.pdf

monolayer steps. We have successfully fabricated step-free surfaces of nitride semiconductors for the first

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_3_en.pdf

Nitride Heterojunction Bipolar Transistor with Regrown Base Layer

communications between the base stations for cellular phones. Compared with Si and GaAs, nitride semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report14.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength LED structure Top view of LED

https://www.rd.ntt/e/brl/result/activities/file/report06/k01.html

List of Invited Talks at International Conferences (2012)

on step-free GaN surface", International Workshop on Nitride semiconductors, Sapporo, Japan (Oct

https://www.rd.ntt/e/brl/result/activities/file/report12/data06e.html

国際会議招待講演一覧（2012年）

", International Workshop on Nitride semiconductors, Sapporo, Japan (Oct. 2012). (9) T. Akasaka, Y. Kobayashi, C. H

https://www.rd.ntt/brl/result/activities/file/report12/data06.html

谷保 芳孝 | NTT R&D Website

　International Workshop on Nitride Semiconductors (IWN) Best Paper Award 2011年　The International Symposium on

https://www.rd.ntt/organization/researcher/superior/s_030.html

Member - NTT Basic Research Laboratories

Taniyasu Aluminum Nitride (AlN) taniyasu.yoshitaka Koji Onomitsu III-V semiconductors Onomitsu.koji

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/list1.html

Overview of Quantum Optics and Optical Materials Research

structure in nitride semiconductors). Major results obtained this fiscal year 1999 are reported in the

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qp/qp_overview.htm

Step-free GaN Surfaces Fabricated by Selective-area Metalorganic Vapor Phase Epitaxy

technique can control the hetero-interfaces of nitride semiconductors in an atomic scale and realize high

https://www.rd.ntt/e/brl/result/activities/file/report09/k01.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength Aluminum Nitride Light

https://www.rd.ntt/e/brl/result/activities/file/report06/report02.html

Layered Boron Nitride as a Release Layer for Mechanical Transfer of GaN-Based Devices

nitride semiconductors of sufficient quality is problematic. Several techniques have been investigated to

https://www.rd.ntt/e/brl/result/activities/file/report11/report02.html

GaN-Based Vertical Cavity Surface Emitting Lasers

microcavities, because the exciton oscillator strength and binding energy of III-nitride semiconductors are

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report17.html

Welcome to Yoshitaka Taniyasu's Homepage

-nitride semiconductors by spectroscopic ellipsometry) 2001-2003 Research associate, NTT Basic research

https://www.rd.ntt/brl/people/taniyasu/

Distinguished Technical Members

microscopy (STM). His current interests are epitaxial growth of nitride semiconductors and nitride

https://www.rd.ntt/e/brl/result/activities/file/report00/E/member05_e.html

Step-free GaN films Grown by Selective-area Metalorganic Vapor Phase Epitaxy

Kasu Materials Science Laboratory Step-free surfaces of GaN-related nitride semiconductors have been

https://www.rd.ntt/e/brl/result/activities/file/report09/report04.html

5th NTT-BRL school at NTT Atsugi R&D Center

Devices using Group-III Nitride Semiconductors" --- Dr. Toshiki Makimoto     Group-III nitrides, such as

https://www.rd.ntt/brl/event/brlschool2009/outline06.html

List of Invited Talks at International Conferences (2009)

: physics and device structure", SPIE Photonics West, San Jose, U.S.A. (Jan. 2009). (3) M. Kasu, "Nitride

https://www.rd.ntt/e/brl/result/activities/file/report09/data06.html

国際会議招待講演一覧（2009）

: physics and device structure", SPIE Photonics West, San Jose, U.S.A. (Jan. 2009). (3) M. Kasu, "Nitride

https://www.rd.ntt/brl/result/activities/file/report09/data06.html

Distinguished Technical Member

). His current interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices

https://www.rd.ntt/e/brl/result/activities/file/report01/E/member05.html

Npn-type InGaN/GaN Nitride Heterojunction Bipolar Transistor (HBT)

Laboratory Wide-gap nitride semiconductors are promising materials for electronic devices that require high

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report14.html

Overview of Quantum Physics and Electronics Research

and correlation effects in high-mobility semiconductors, carrier interactions in bilayer (electron

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Anisotropic In-Plane Strains in Non-Polar Al1-xGaxN (11-20) Films (x<0.2)

nitride semiconductors, because of its high electrical and thermal conductivities and the smaller lattice

https://www.rd.ntt/e/brl/result/activities/file/report08/report04.html

News - NTT Basic Research Laboratories

2012.11.16, New Post-doctral: Ryan Banal 2012.10.19, International Workshop on Nitride Semiconductors

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/index-J.html

Microsoft PowerPoint - SP2010Digest_ms_en_01.ppt [互換モード]

-emitting devices and realizing the deep-UV LEDs. Aluminum nitride (AlN) is a direct-bandgap semiconductor

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/topics/taniyasu_e.pdf

Aiming to Become a Visible Researcher by Taking Up Challenges without Fear of Failure | NTT R&D Website

wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are being

https://www.rd.ntt/e/research/JN202306_22119.html

Nitride Heterojunction Bipolar Transistors for High-Power Applications

Physical Science Laboratory Compared with Si and GaAs, nitride semiconductors have high breakdown voltage

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report14.html

Distinguished Researcher

-bandgap nitride semiconductors. He was a visiting researcher at Ecole polytechnique federale de Lausanne

https://www.rd.ntt/e/brl/result/activities/file/report13/member07E.html

Distinguished Technical Member

). His current interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices

https://www.rd.ntt/e/brl/result/activities/file/report02/E/member05.html

国際会議招待講演一覧（2014年1月～2015年3月）

on Growth of Nitride Semiconductors (IDGN-2), Sendai, Japan (Oct. 2014). (14) Y. Ueno and K. Furukawa

https://www.rd.ntt/brl/result/activities/file/report14/data10J.html

List of Invited Talks at International Conferences (Jan. 2014 - Mar. 2015)

on Growth of Nitride Semiconductors (IDGN-2), Sendai, Japan (Oct. 2014). (14) Y. Ueno and K. Furukawa

https://www.rd.ntt/e/brl/result/activities/file/report14/data09E.html

Emission Mechanism of AlN Deep-Ultraviolet Light-Emitting Diode

weak from the C-plane but strong from the A-plane for AlN. For nitride semiconductors, like AlN and GaN

https://www.rd.ntt/e/brl/result/activities/file/report10/report04.html

Distinguished Researchers

growth and device application of wide bandgap nitride semiconductors. He was a visiting researcher at

https://www.rd.ntt/e/brl/result/activities/file/report12/member08e.html

High Performance Nitride-Based Heterojunction Bipolar Transistors on GaN Substrates

Makimoto Materials Science Laboratory There are large mismatches between III-nitride semiconductors and

https://www.rd.ntt/e/brl/result/activities/file/report08/report03.html

Distinguished Technical Member

of nitride semiconductors and nitride semiconductor devices. He is an associate editor of Japan

https://www.rd.ntt/e/brl/result/activities/file/report03/E/member05.html

Distinguished Researchers

. Since then, he has been engaged in research on wide-bandgap nitride semiconductors. He was a visiting

https://www.rd.ntt/e/brl/result/activities/file/report14/member07E.html

国際会議招待講演一覧　（2003年度）　III．量子電子物性関連

Nitride Heterojunction Bipolar Transistors”, 2003 Asia-Pacific Workshop on Fundamental and Application of

https://www.rd.ntt/brl/result/activities/file/report03/J/data14.html

List of Invited Talks at International Conferences (Fiscal 2003) III. Quantum Electron Physics

. Makimoto, K. Kumakura, and N. Kobayashi, “npn-Type Nitride Heterojunction Bipolar Transistors”, 2003 Asia

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data14.html

Doping Control of AlInN/GaN Lattice-Matched Heterostructure

-nitride semiconductors, AlInN is the only ternary alloy that can be grown lattice-matched to GaN at an In

https://www.rd.ntt/e/brl/result/activities/file/report12/report04e.html

Overview of Quantum Optics and Optical Materials Research

). (2) Optical properties in nitride-semiconductors and their device applications (optical properties of

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report15_e.html

Distinguished Researchers

research. His current interests are epitaxial growth and device application of nitride semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report11/member06.html

no_2_en.pdf

.jp Aluminum nitride (AlN) is a direct-bandgap semiconductor with a bandgap energy of 6 eV, the

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_2_en.pdf

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

diamond, as well as solar energy conversion devices using nitride semiconductors. Member Dr. Yoshitaka

https://www.rd.ntt/e/brl/group_introduction/group_001.html

Development of a groundbreaking process for release of GaN-based thin-film devices from substrates｜NTT Basic Research Laboratories | NTT R&D Website

release of GaN-based thin-film devices from substrates, where an extremely thin layer of boron nitride (BN

https://www.rd.ntt/e/brl/latesttopics/2012/04/latest_topics_201204120100.html

Overview of Quantum Physics and Electronics Research

our p-InGaN layer is good enough and wide-bandgap nitride semiconductors show promise for high-power

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report11.html

An InGaN-based horizontal cavity surface emitting laser diode

application to optoelectronic devices in the visible and UV ranges, because these semiconductors have wide and

https://www.rd.ntt/e/brl/result/activities/file/report04/report04.html

Overview of Quantum Physics and Electronics Research

conventional electronic and photonic device applications of nitride-based semiconductors, we demonstrated novel

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report11_e.html

Graphene and 2D Materials

2D materials Oxide, nitride materials Members Publications Contact English | 日本語 Graphene and 2D

https://www.rd.ntt/brl/group_introduction/shitsuko-g/graphene.html

In-house Award Winner's List (Fiscal 2002)

Band Engineering of Nitride Semiconductors" Feb. 12,2003 Award for Achievements by Director of Basic

https://www.rd.ntt/e/brl/result/activities/file/report02/E/data05.html