Creating a photonic topological insulator by current injection|NTT Basic Research Laboratories | NTT R&D Website
Creating a photonic topological insulator by current injection|NTT Basic Research Laboratories
https://www.rd.ntt/e/brl/latesttopics/2018/11/latest_topics_201811201351.html
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication_TI.html
Quantum Solid State Physics Research Group|Members
Scientist Topological insulator, Quantum Hall effects, Molecular-beam epitaxy [Personal Homepage] Takafumi
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/members.html
Time-resolved Measurement of Ambipolar Plasmon Transport in Semiconductor Composite Quantum Wells | NTT R&D Website
against external noise. The two-dimensional topological insulator is expected to serve as a platform on
https://www.rd.ntt/e/research/JN202303_21262.html
Creating a Map of Science and Connecting with the World and Future through It|NTT R&D Website
relates to spin and uses a new kind of material called a topological insulator. Before explaining the
https://www.rd.ntt/e/research/JN202101_9584.html
Gate-controlled Semimetal - Topological Insulator Transition in an InAs/GaSb Heterostructure
Gate-controlled Semimetal - Topological Insulator Transition in an InAs/GaSb Heterostructure Gate
https://www.rd.ntt/e/brl/result/activities/file/report15/report19E.html
Quantum Solid State Physics Research Group|Home
release list Research subject Topological insulator Topological insulators are characterized by spin
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/
量子固体物性研究グループ|Home
しています. Press release Press release list Research subject Topological insulator Topological insulators are
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/index-j.html
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication.html
Koji Muraki | NTT R&D Website
(April, 2013-March, 2014) Keywords Semiconductor heterostructure, Molecular beam epitaxy, Topological
https://www.rd.ntt/e/organization/researcher/superior/s_021.html
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication_NW.html
First Experimental Demonstration of a Phenomenon That Had Not Been Verified for More Than 20 Years Since Its Theory Was Proposed | NTT R&D Website
demonstrating that (i) a topological insulator, which is a material that conducts electricity on its surface but
https://www.rd.ntt/e/research/JN202312_24208.html
Koji Muraki (NTT Basic Research Labs)
). [abstract] Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
https://www.rd.ntt/brl/people/muraki/
ISNTT 2015
, topological insulator, spintronics, single-electron devices, and semiconductor/superconductor quantum bit
https://www.rd.ntt/e/brl/result/activities/file/report15/data02E.html
村木康二 (NTT物性科学基礎研究所)
). [abstract] Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
https://www.rd.ntt/brl/people/muraki/index-j.html
isntt2019_oral_program_r1.pdf
Transition in Magnetic Topological Insulator Driven by Magnetization Angle Rotation M. Kawamura, M. Mogi, R
https://www.rd.ntt/brl/event/isntt2019/download/isntt2019_oral_program_r1.pdf
NTT Institute for Fundamental Mathematics | NTT R&D Website
of application, including the topological insulator and topological data analysis. Furthermore
https://www.rd.ntt/e/ifm/
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication_SP.html
国際会議招待講演一覧
. Muraki, "Engineering a Two-dimensional Topological Insulator with III-V Semiconductor Heterostructures
https://www.rd.ntt/brl/result/activities/file/report16/data11J.html
List of Invited Talks
Hall Insulator with InAs/GaSb Type-II Quantum Wells", Topological Material Science TopoMat Meeting 2016
https://www.rd.ntt/e/brl/result/activities/file/report16/data10E.html
Poster session
. Kasuga, S. Kurihara; Waseda University, Japan "Randomness and Superconductor-Insulator Transition in Two
https://www.rd.ntt/brl/event/ms s2002/poster.htm
Research Activities in NTT Basic Research Laboratories Vol. 26 (2015)
Generated by Graphene p-n Junctions in the Quantum Hall Effect Regime Gate-controlled Semimetal-Topological
https://www.rd.ntt/e/brl/result/activities/file/report15/2015_E.html
phononic.html
between Microwave Ring Resonator and Waveguide in Phononic Topological Insulators D. Hatanaka, H
https://www.rd.ntt/brl/group_introduction/butsume-g/phononic.html
Complete_Program_oral_and_poster_r7.pdf
University 16:50~17:10 We-14 : Quantum Hall Effect in 3D topological insulator (Bi1-xSbx)2Te3 Ryutaro Yoshimi
https://www.rd.ntt/brl/event/isntt2015/download/Complete_Program_oral_and_poster_r7.pdf
Overview of Research in Laboratories
-controlled semimetal-topological insulator transition in InAs/GaSb heterostructures. We show theoretically
https://www.rd.ntt/e/brl/result/activities/file/report15/report00E.html
量子固体物性研究グループ|NTT物性科学基礎研究所|NTT R&D Website
, "Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure" Phys. Rev
https://www.rd.ntt/brl/group_introduction/group_006.html
Quantum Solid State Physics Research Group | NTT Basic Research Laboratories | NTT R&D Website
, "Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure" Phys. Rev
https://www.rd.ntt/e/brl/group_introduction/group_006.html
論文|NTT物性科学基礎研究所|NTT R&D Website
silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature" Appl. Phys
https://www.rd.ntt/brl/result/publications/paper_2024.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
. Razanoelina, M. Hori, A. Fujiwara, and Y. Ono "Drag of electron-hole bilayer in silicon-on-insulator metal
https://www.rd.ntt/e/brl/result/publications/paper_2024.html
publication_list.pdf
measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator
https://www.rd.ntt/brl/people/afuji/kakenS/sub/publication_list.pdf
NTTBrl_honbun_E_190306.indd
technologies including solid- state superradiant masers. A photonic topological insulator is an artificial
https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2018_E.pdf
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication_GP.html
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication_QH.html
Complete Program (Oral+Poster)_21031024_ver2
: Landau level spectroscopy-imaging on the surface of topological insulator under potential variation
https://www.rd.ntt/brl/event/isntt2013/download/Complete_Program_oral_and_poster_r6.pdf
Quantum Solid State Physics Research Group|Publication
Quantum Solid State Physics Research Group|Publication By Topic Topological Insulator Quantum Hall
https://www.rd.ntt/brl/group_introduction/ryoubutsu-g/publication_QD.html
Complete_Program_r1.pdf
Transition in Magnetic Topological Insulator Driven by Magnetization Angle Rotation M. Kawamura, M. Mogi, R
https://www.rd.ntt/brl/event/isntt2019/download/Complete_Program_r1.pdf
<8F4390B394C5313032362E706466>
Delft University of Technology PWe09 : Strain-induced Dirac State Shift in Topological Insulator Bi2Se3
https://www.rd.ntt/brl/event/isntt2017/download/Complete_Program_r1.pdf
Exploring New Fields and the World | NTT R&D Website
to do with yet. In this field, we theoretically discovered that a photonic topological insulator can
https://www.rd.ntt/e/research/JN202006_2201.html
BRLセミナー|NTT物性科学基礎研究所|NTT R&D Website
313 / FY25/21st Nanostructures on topological insulator ? individual Josephson junction physics in
https://www.rd.ntt/brl/overview/brl-seminar.html
<8376838D834F83898380622E786C73>
Phosphorous Ionization in Silicon-on-insulator Metal-oxide-semiconductor Field-effect Transistors J
https://www.rd.ntt/brl/event/isntt2011/download/isntt2011_program_revised_1.pdf
Latest Research Contents | NTT Basic Research Laboratories | NTT R&D Website
light from a solid-state hybrid quantum system 11/20/2018 Creating a photonic topological insulator by
https://www.rd.ntt/e/brl/latesttopics/
論文|NTT物性科学基礎研究所|NTT R&D Website
. Suzuki, K. Onomitsu and K. Muraki Single-edge transport in an InAs/GaSb quantum spin Hall insulator Phys
https://www.rd.ntt/brl/result/publications/paper_2016.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
insulator" Phys. Rev. B 94 (3), 035301 (2016). " S. Dooley, W. J. Munro and K. Nemoto "Quantum metrology
https://www.rd.ntt/e/brl/result/publications/paper_2016.html
学術論文出版一覧
Insulator", Phys. Rev. B 94, 035301 (2016). (10) S. Dooley, W. J. Munro, and K. Nemoto, "Quantum Metrology
https://www.rd.ntt/brl/result/activities/file/report16/data10J.html
Publication List
, "Single-edge Transport in an InAs/GaSb Quantum Spin Hall Insulator", Phys. Rev. B 94, 035301 (2016). (10
https://www.rd.ntt/e/brl/result/activities/file/report16/data09E.html
論文|NTT物性科学基礎研究所|NTT R&D Website
SUPERFLUID, STAGGERED STATE, AND MOTT INSULATOR OF REPULSIVELY INTERACTING THREE-COMPONENT FERMIONIC ATOMS IN
https://www.rd.ntt/brl/result/publications/paper_2013.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
. Suga "SUPERFLUID, STAGGERED STATE, AND MOTT INSULATOR OF REPULSIVELY INTERACTING THREE-COMPONENT
https://www.rd.ntt/e/brl/result/publications/paper_2013.html
学術論文出版一覧
Transistors with NO2 Hole Doping and Al2O3 Gate Insulator Layer", Jpn. J. Appl. Phys. 55, 041301 (2016). (29
https://www.rd.ntt/brl/result/activities/file/report15/data10J.html
Publication List
Transistors with NO2 Hole Doping and Al2O3 Gate Insulator Layer", Jpn. J. Appl. Phys. 55, 041301 (2016). (29
https://www.rd.ntt/e/brl/result/activities/file/report15/data09E.html
薄膜材料研究グループ|NTT物性科学基礎研究所|NTT R&D Website
. Couedo, R. Ohana, K. Suzuki, K. Onomitsu, and K. Muraki Impact of epitaxial strain on the topological
https://www.rd.ntt/brl/group_introduction/group_001.html
Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website
epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb
https://www.rd.ntt/e/brl/group_introduction/group_001.html
論文|NTT物性科学基礎研究所|NTT R&D Website
. Fujiwara, and Y. Ono "Critical conductance of two-dimensional electron gas in silicon-on-insulator metal
https://www.rd.ntt/brl/result/publications/paper_2021.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
. Fujiwara, and Y. Ono "Critical conductance of two-dimensional electron gas in silicon-on-insulator metal
https://www.rd.ntt/e/brl/result/publications/paper_2021.html
Low-Dimensional Nanomaterials Research Group | NTT Basic Research Laboratories | NTT R&D Website
, K. Onomitsu and K. Muraki Gate-controlled semimetal-topological insulator transition in an InAs/GaSb
https://www.rd.ntt/e/brl/group_introduction/group_002.html
, 041301(R) (2015). [abstract] Gate-controlled semimetal-topological insulator transition in an InAs/GaSb
https://www.rd.ntt/brl/people/muraki/Publications/FullList.html
NTT物性科学基礎研究所の研究活動
♦ Realizing Topological Insulating Phase in the Heterostructure Composed of Direct Transition Band Gap
https://www.rd.ntt/e/brl/result/activities/file/report13/Report_13_e.pdf
論文|NTT物性科学基礎研究所|NTT R&D Website
. Lansbergen, and A. Fujiwara Carrier transport in indium-doped p-channel silicon-on-insulator transistors
https://www.rd.ntt/brl/result/publications/paper_2011.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
"Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K" J. Appl
https://www.rd.ntt/e/brl/result/publications/paper_2011.html
Annual_report_2023_E.pdf
ria ls , topological mate ria ls , conductive polymers, and biological soft materials. We are
https://www.rd.ntt/brl/brl/result/activities/file/annual_report/Annual_report_2023_E.pdf
Annual_report_2023_E.pdf
ria ls , topological mate ria ls , conductive polymers, and biological soft materials. We are
https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2023_E.pdf
論文|NTT物性科学基礎研究所|NTT R&D Website
. Krockenberger, A. Ikeda, Y. Taniyasu, M. Naito, and H. Yamamoto Crystal growth and metal-insulator transition in
https://www.rd.ntt/brl/result/publications/paper_2018.html
論文|NTT物性科学基礎研究所|NTT R&D Website
(2015). K. Suzuki, Y. Harada, K. Onomitsu, and K. Muraki Gate-controlled semimetal-topological insulator
https://www.rd.ntt/brl/result/publications/paper_2015.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
. Krockenberger, A. Ikeda, Y. Taniyasu, M. Naito, and H. Yamamoto "Crystal growth and metal-insulator transition
https://www.rd.ntt/e/brl/result/publications/paper_2018.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure" Phys. Rev. B 91 (24
https://www.rd.ntt/e/brl/result/publications/paper_2015.html
論文|NTT物性科学基礎研究所|NTT R&D Website
edge-crossings over the spine in a topological book embedding of a graph" Discret Appl. Math. 92 (2-3
https://www.rd.ntt/brl/result/publications/paper_1999.html
Publications | NTT Basic Research Laboratories | NTT R&D Website
edge-crossings over the spine in a topological book embedding of a graph" Discret Appl. Math. 92 (2-3
https://www.rd.ntt/e/brl/result/publications/paper_1999.html
低次元構造研究グループ|NTT物性科学基礎研究所|NTT R&D Website
, K. Onomitsu and K. Muraki Gate-controlled semimetal-topological insulator transition in an InAs/GaSb
https://www.rd.ntt/brl/group_introduction/group_002.html
量子光制御研究グループ|NTT物性科学基礎研究所|NTT R&D Website
. Hamerly, K. Inaba, T. Inagaki, H. Takesue, Y. Yamamoto and H. Mabuchi Topological defect formation in 1D
https://www.rd.ntt/brl/group_introduction/group_009.html
Quantum Optical State Control Research Group | NTT Basic Research Laboratories | NTT R&D Website
. Hamerly, K. Inaba, T. Inagaki, H. Takesue, Y. Yamamoto and H. Mabuchi Topological defect formation in 1D
https://www.rd.ntt/e/brl/group_introduction/group_009.html
Report_15_E.pdf
Quantum Hall Effect Regime 39 ◆ Gate-controlled Semimetal-Topological Insulator Transition in an InAs/GaSb
https://www.rd.ntt/e/brl/result/activities/file/report15/Report_15_E.pdf
Publication
, Y. Moritake, E. Kuramochi, M. Ono, H. Sumikura, and M. Notomi, "Low-Loss Switchable Topological
https://www.rd.ntt/brl/group_introduction/butsuna-g/publication.html
Publication
, Y. Moritake, E. Kuramochi, M. Ono, H. Sumikura, and M. Notomi, "Low-Loss Switchable Topological
https://www.rd.ntt/brl/group_introduction/butsuna-g/publication-j.html
Report_14_E.pdf
Topological Defects in Chemical Vapor Deposition-Grown Graphene by Isotope Labeling ♦ On-Chip FRET Graphene
https://www.rd.ntt/e/brl/result/activities/file/report14/Report_14_E.pdf
Activity report
https://www.rd.ntt/e/brl/result/activities/file/report07/BRLreport_2007E.pdf
NTTBrl__E_h1
developed a gate-all-around InAs nanowire MOSFET using a thin high-k gate insulator, which enables the
https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2017_E.pdf
Report_16_J.pdf
康二1 1量子電子物性研究部 2機能物質科学研究部 量子スピンホール絶縁体 (quantum spin Hall insulator, QSHI)はバンド反転によって、バルクが絶縁 で、エッジにスピン偏
https://www.rd.ntt/brl/result/activities/file/report16/Report_16_J.pdf
Publication
, "Active topological photonics, Nanophotonics 9 (3), 547-567 (2020). [abstract] Masaaki Ono, Masanori Hata
https://www.rd.ntt/npc/group/ryouna-g/publication-j.html
Publication
, "Active topological photonics, Nanophotonics 9 (3), 547-567 (2020). [abstract] Masaaki Ono, Masanori Hata
https://www.rd.ntt/npc/group/ryouna-g/publication.html
Research Activities
https://www.rd.ntt/e/brl/result/activities/file/report11/Report_11.pdf
Report_16_E.pdf
-dimensional topological insulators in InAs/InxGa1-xSb heterostructures and graphene- based electron emitters
https://www.rd.ntt/e/brl/result/activities/file/report16/Report_16_E.pdf
Publications
). R. Hamerly, K. Inaba, T. Inagaki, H. Takesue, Y. Yamamoto, and H. Mabuchi, "Topological defect
https://www.rd.ntt/brl/people/htakesue/papers.html
Research Activities
https://www.rd.ntt/e/brl/result/activities/file/report10/Report_2010E.pdf
NTT物性科学基礎研究所の研究活動
ンジスタをsilicon-on-insulator基 板上に作製した[3]。 作製においては、ソース、ドレインからチャネルへのドーパント拡散を防 ぐために、ソース、ドレインとチャネルの間に電気的に形成可能なリードを挿入
https://www.rd.ntt/brl/result/activities/file/report08/BRLreport_2008J.pdf
Report_15_J.pdf
https://www.rd.ntt/brl/result/activities/file/report15/Report_15_J.pdf
NTT物性科学基礎研究所の研究活動
1に素子の模式図を、図2に電子顕微鏡写真を示す。Si-on-insulator基板に形成した3 つのシリコン細線MOSFET (FET1-3)から成る単電子転送素子と、細線MOSFET (S-FET
https://www.rd.ntt/brl/result/activities/file/report11/Report_11.pdf
NTT物性科学基礎研究所の研究活動
、10–4 程度のエラーレートを達成した。さらに、 理論的にはエラーレートは10–8オーダーまで下がる可能性があることを確認した[2]。 図1に素子の概略図を示す。Silicon-on-insulator
https://www.rd.ntt/brl/result/activities/file/report13/Report_13_J.pdf
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