Result for "Atomic layer semiconductors",114

Distinguished Technical Member

flow-rate modulation epitaxy and the growth of atomic-layer structure, and in-situ optical monitoring

https://www.rd.ntt/e/brl/result/activities/file/report98/E/tokubetsu.e.html

Yoshitaka Taniyasu | NTT R&D Website

, Atomic-layer semiconductors, Crystal growth, Light-emitting devices, Electron devices Related Contents

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

Pioneering the Understanding and Functional Exploration of Carrier Dynamics in Atomic-layer Materials | NTT R&D Website

Pioneering the Understanding and Functional Exploration of Carrier Dynamics in Atomic-layer

https://www.rd.ntt/e/research/JN202505_33801.html

国際会議招待講演一覧（2010年）

epitaxial few-layer graphene on SiC", International Workshop on in situ characterization of near surface

https://www.rd.ntt/brl/result/activities/file/report10/data07.html

List of Invited Talks at International Conferences (2010)

epitaxial few-layer graphene on SiC", International Workshop on in situ characterization of near surface

https://www.rd.ntt/e/brl/result/activities/file/report10/data07.html

Successful nanowire lasing at room temperature in the optical communication wavelength range ｜NTT Basic Research Laboratories | NTT R&D Website

emission layer and the barrier layer, which is abrupt and undisturbed at the atomic level in a nanowire

https://www.rd.ntt/e/brl/latesttopics/2019/02/latest_topics_201902241146.html

Overview and Prospects for Research on Plasmons in Two-dimensional Semiconductor Systems | NTT R&D Website

-dimensionally confined electron systems in semiconductor heterostructures and in graphene, a single atomic layer

https://www.rd.ntt/e/research/JN202303_21252.html

Overview of Research in Laboratories

design at the atomic and molecular levels. This laboratory consists of three research groups

https://www.rd.ntt/e/brl/result/activities/file/report13/report00E.html

Overview of Research in Laboratories

design at the atomic and molecular levels. This laboratory consists of three research groups

https://www.rd.ntt/e/brl/result/activities/file/report14/report00E.html

Pioneering Valley Physics with Two-dimensional Semiconductors | NTT R&D Website

Pioneering Valley Physics with Two-dimensional Semiconductors | NTT R&D Website NTT R&D Website

https://www.rd.ntt/e/research/JN202604_38943.html

Semiconductor quantum dots with single-atom precision｜NTT Basic Research Laboratories | NTT R&D Website

or less. The MBE can control thickness of grown film at atomic layer precision. The single crystal

https://www.rd.ntt/e/brl/latesttopics/2014/06/latest_topics_201406300201.html

Research Activities in NTT Basic Research Laboratories

-structures at molecular and atomic levels and Quantum Information Technology based on quantum mechanical

https://www.rd.ntt/e/brl/result/activities/file/report01/BRLReports_E.pdf

First demonstration of nanowire lasers at telecom wavelengths and high-speed signal modulation｜NTT Basic Research Laboratories | NTT R&D Website

semiconductors is generally small at telecom bands. Achievements NTT Nanophotonics Center (located in Atsugi

https://www.rd.ntt/e/brl/latesttopics/2017/04/latest_topics_201704031636.html

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

https://www.rd.ntt/e/brl/group_introduction/group_001.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

and Y. Kobayashi "Insitu Monitoring And Control Of Atomic Layer Epitaxy By Surface Photoabsorption

https://www.rd.ntt/brl/result/publications/paper_1993.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

), 5138-5143 (1993). N. Kobayashi and Y. Kobayashi "Insitu Monitoring And Control Of Atomic Layer Epitaxy

https://www.rd.ntt/e/brl/result/publications/paper_1993.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

Lines From Nitrogen Atomic-Layer-Doped Gaas" Appl. Phys. Lett. 67 (5), 688-690 (1995). T. Makimoto and N

https://www.rd.ntt/brl/result/publications/paper_1995.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

Lines From Nitrogen Atomic-Layer-Doped Gaas" Appl. Phys. Lett. 67 (5), 688-690 (1995). T. Makimoto and N

https://www.rd.ntt/e/brl/result/publications/paper_1995.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Makimoto, N. Kobayashi, and Y. Horikoshi "Electron Conduction In An Atomic-Layer-Doped Gaas Plane" Jpn. J

https://www.rd.ntt/brl/result/publications/paper_1988.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Horikoshi "Electron Conduction In An Atomic-Layer-Doped Gaas Plane" Jpn. J. Appl. Phys. Part 2 - Lett. 27 (5

https://www.rd.ntt/e/brl/result/publications/paper_1988.html

薄膜材料研究グループ｜NTT物性科学基礎研究所｜NTT R&D Website

-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition Appl. Phys. Lett

https://www.rd.ntt/brl/group_introduction/group_001.html

Nano-profiling of frozen electrons in a semiconductor device｜NTT Basic Research Laboratories | NTT R&D Website

those at a Si/SiO2 interface, in single-atomic-layer materials such as graphene, and on a liquid helium

https://www.rd.ntt/e/brl/latesttopics/2014/07/latest_topics_201407210203.html

Research Activities

Heterostructures with an Atomic-Layer-Deposited Insulating Layer ♦ Indium Atom Manipulation on a Cleaved InAs

https://www.rd.ntt/e/brl/result/activities/file/report11/Report_11.pdf

Hideki Yamamoto - Senior distinguished researcher

. Yamamoto, Y. Krockenberger, M. Tanaka, and S. Ohya: Single-layer spin-orbit-torquemagnetization switching

https://www.rd.ntt/brl/people/hideki/E/result.html

NTT物性科学基礎研究所 上席特別研究員 山本秀樹

-2719 (2021). [2] Y. Krockenberger, A. Ikeda, and H. Yamamoto: Atomic Stripe Formation in Infinite-Layer

https://www.rd.ntt/brl/people/hideki/result.html

Microsoft Word - 01_akasaka-E.doc

Novel Buffer Layer ♦ AlN field emission display ♦ Real-time Observation of Nanowire Formation by Means

https://www.rd.ntt/e/brl/result/activities/file/report04/BRLReports_E.pdf

NTTBrl_honbun_E_230228_final.indd

performance of this device by incorporating a variety of two-dimensional atomic layer materials, thereby

https://www.rd.ntt/brl/brl/result/activities/file/annual_report/Annual_report_2022_E.pdf

NTTBrl_honbun_E_230228_final.indd

performance of this device by incorporating a variety of two-dimensional atomic layer materials, thereby

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2022_E.pdf

NTT-BRL Research Activities Vol 19

Ligand-Induced Conformational Changes in Single ATP Receptors with Fast-Scanning Atomic Force Microscopy

https://www.rd.ntt/e/brl/result/activities/file/report08/BRLreport_2008E.pdf

NTTBrl_honbun_E_260302.indd

, and spintronic) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials

https://www.rd.ntt/brl/result/activities/file/annual_report/NTTBrl_E_260310_print.pdf

論文｜NTT物性科学基礎研究所｜NTT R&D Website

. Kobayashi and N. Kobayashi "Growth-Rate Self-Limitation Mechanism In Inp Atomic Layer Epitaxy Studied By

https://www.rd.ntt/brl/result/publications/paper_1992.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

. Kobayashi and N. Kobayashi "Growth-Rate Self-Limitation Mechanism In Inp Atomic Layer Epitaxy Studied By

https://www.rd.ntt/e/brl/result/publications/paper_1992.html

論文｜NTT物性科学基礎研究所｜NTT R&D Website

-Rate Modulation Epitaxy And Atomic Layer Epitaxy By New Insitu Optical Monitoring Method" Acta Polytech

https://www.rd.ntt/brl/result/publications/paper_1990.html

Publications | NTT Basic Research Laboratories | NTT R&D Website

-Rate Modulation Epitaxy And Atomic Layer Epitaxy By New Insitu Optical Monitoring Method" Acta Polytech

https://www.rd.ntt/e/brl/result/publications/paper_1990.html

Publications - NTT Basic Research Laboratories

Diamond Surface by Using Atomic- Layer-Deposited Al2O3 Overlayer and its Electric Properties M. Kasu, H

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/new1001003.html

Poster presentaion - SciencePlaza 2009 - NTT Basic Reseach Laboratories

structure and electronic properties of epitaxial few-layer graphene on the number of layers PDF F.Maeda / H

https://www.rd.ntt/brl/event/splaza2009/poster_e.html

report_2005E.pdf

voltage. We have developed a buffer layer for the growth of high-quality nitride-based semiconductors on

https://www.rd.ntt/e/brl/result/activities/file/report05/report_2005E.pdf

english.pdf

Telegraph and Telephone Corporation (NTT) Basic Research Laboratories Atomic Force Microscopy Images

https://www.rd.ntt/e/brl/result/activities/file/report00/english.pdf

BRLReports_E.pdf

at molecular and atomic levels and Quantum Information Technology based on quantum mechanical

https://www.rd.ntt/e/brl/result/activities/file/report02/BRLReports_E.pdf

Hideki Yamamoto | NTT R&D Website

. Yamamoto, and H. Sato: Reflection high-energy electron diffraction and atomic force microscopy studies on

https://www.rd.ntt/e/organization/researcher/superior/s_024.html

山本 秀樹 | NTT R&D Website

(1997). M. Naito, H. Yamamoto, and H. Sato: Reflection high-energy electron diffraction and atomic force

https://www.rd.ntt/organization/researcher/superior/s_024.html

Report_12.pdf

using InAlAs for the sacrificial layer in order to reduce the leakage current, we realized a LEAP laser

https://www.rd.ntt/brl/result/activities/file/report12/Report_12.pdf

Report_12.pdf

using InAlAs for the sacrificial layer in order to reduce the leakage current, we realized a LEAP laser

https://www.rd.ntt/e/brl/result/activities/file/report12/Report_12.pdf

国際会議招待講演一覧

", International Symposium on Revolutionary Atomic-layer Materials, Sendai, Japan (Oct. 2016). (13) H. Yamaguchi

https://www.rd.ntt/brl/result/activities/file/report16/data11J.html

List of Invited Talks

III-V Semiconductor Heterostructures", International Symposium on Revolutionary Atomic-layer Materials

https://www.rd.ntt/e/brl/result/activities/file/report16/data10E.html

BRLReports_E.pdf

cavity layer is degraded by the large lattice mismatch between the GaN-based mirror layers. A high

https://www.rd.ntt/e/brl/result/activities/file/report03/BRLReports_E.pdf

NTTBrl_honbun_E_220301-2.indd

) devices Low-Dimensional Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2021_E.pdf

Annual_report_2019_E.pdf

Nanomaterials Research Group 2D atomic-layer Materials Creation of ultimately thin functional atomic-layer

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2019_E.pdf

Research Activities

can control the hetero-interfaces of nitride semiconductors in an atomic scale and realize high

https://www.rd.ntt/e/brl/result/activities/file/report09/BRLreport_2009E.pdf

NTT物性科学基礎研究所の研究活動

Semiconductors ♦ Encapsulated Gate-All-Around InAs Nanowire Field-Effect Transistors ♦ AC Admittance of DNTT

https://www.rd.ntt/e/brl/result/activities/file/report13/Report_13_e.pdf