Result for "Semiconductor heterostructure",203

Density-of-states Imaging in Semiconductor Heterostructures

cleaved semiconductor heterostructure surfaces Quantized subbands in a quantum well Electron wave

https://www.rd.ntt/e/brl/result/activities/file/report06/k03.html

Overview of Quantum Electron Physics Research

using artificial molecules) (3)Controlled semiconductor-surface crystal growth (heterostructure growth

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

Successful nanowire lasing at room temperature in the optical communication wavelength range ｜NTT Basic Research Laboratories | NTT R&D Website

semiconductor nanostructure that was developed independently by NTT. We also realized lasing at room temperature

https://www.rd.ntt/e/brl/latesttopics/2019/02/latest_topics_201902241146.html

Multi-Stacked InAs/InP Heterostructure Nanowires Grown by Self-Assisted Vapor-Liquid-Solid Mode

CMOS-compatible synthesis approach which produces semiconductor heterostructure NWs with excellent

https://www.rd.ntt/e/brl/result/activities/file/report14/report25E.html

Invited talks

using compound semiconductor heterostructure", 2010 Asia-Pacific Workshop on Fundamentals and

https://www.rd.ntt/brl/people/hiroshi/invited_talks.html

Compound Semiconductor Micro/Nanomechanical Devices

Compound Semiconductor Micro/Nanomechanical Devices Compound Semiconductor Micro/Nanomechanical

https://www.rd.ntt/e/brl/result/activities/file/report02/E/k03.html

Realizing Topological Insulating Phase in the Heterostructure Composed of Direct Transition Band Gap Semiconductors

Realizing Topological Insulating Phase in the Heterostructure Composed of Direct Transition Band

https://www.rd.ntt/e/brl/result/activities/file/report13/report17E.html

no_17_en.pdf

NTT Basic Research Laboratories Correlated coherent oscillations in coupled semiconductor charge

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_17_en.pdf

Research Activities in NTT Basic Research Laboratories Vol. 24 (2013)

with Double Optical Gating Optical Nanocavity Formed by a Semiconductor Nanowire and a Si Photonic

https://www.rd.ntt/e/brl/result/activities/file/report13/2013_E.html

Compound Semiconductor Micro/Nanomechanical Devices

fabricated from a compound semiconductor quantum structure. The single heterostructure consists of 15-nm

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report13.html

Nano-profiling of frozen electrons in a semiconductor device｜NTT Basic Research Laboratories | NTT R&D Website

achieved by using a pristine semiconductor heterostructure*5 and highly sensitive resistively detected NMR

https://www.rd.ntt/e/brl/latesttopics/2014/07/latest_topics_201407210203.html

国際会議招待講演一覧（2009）

. Yamaguchi, "Micro/Nanomechanical systems based on compound semiconductor heterostructures", Frontiers in

https://www.rd.ntt/brl/result/activities/file/report09/data07.html

List of Invited Talks at International Conferences (2009)

Advanced Semiconductor Devices, Busan, Korea (Jun. 2009). (6) H. Yamaguchi,"Heterostructure-based micro

https://www.rd.ntt/e/brl/result/activities/file/report09/data07.html

Contents

Research Semiconductor Quantum Dot Molecule High-Temperature Performance in AlGaN/GaN Heterostructure Field

https://www.rd.ntt/e/brl/result/activities/file/report98/E/

Koji Muraki | NTT R&D Website

(April, 2013-March, 2014) Keywords Semiconductor heterostructure, Molecular beam epitaxy, Topological

https://www.rd.ntt/e/organization/researcher/superior/s_021.html

no_13_en.pdf

NTT Basic Research Laboratories Compound Semiconductor Mechanical Devices - Ultra-sensitive

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_13_en.pdf

Overview of Quantum Physics and Electronics Research

) Controlled semiconductor-surface crystal growth and nano-scale evaluation (heterostructure growth mode on

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Density-of-states Imaging in Semiconductor Heterostructures

the DOS can be obtained. By performing STS on cleaved semiconductor heterostructure surfaces (Fig. 1

https://www.rd.ntt/e/brl/result/activities/file/report06/report19.html

Layered Boron Nitride as a Release Layer for Mechanical Transfer of GaN-Based Devices

]. Photograph in Figure 1 shows the transferred AlGaN/GaN heterostructure, approximately 2 cm square, on an

https://www.rd.ntt/e/brl/result/activities/file/report11/report02.html

K_Tateno - Page: 2 of 3

luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires ,” Nanotechnology 26, 115704  (2015

https://www.rd.ntt/brl/people/ktateno/k_tateno_002.htm