Result for "Nitride semiconductors",186

Yoshitaka Taniyasu | NTT R&D Website

Awards JSAP Prize (2019） International Workshop on Nitride Semiconductors (IWN) Best Paper Award (2012

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

High-Temperature Operation of Nitride-Based HBTs

Kazuhide Kumakura and Toshiki Makimoto Materials Science Laboratory Nitride-based semiconductors are

https://www.rd.ntt/e/brl/result/activities/file/report05/report05.html

no_3_en.pdf

monolayer steps. We have successfully fabricated step-free surfaces of nitride semiconductors for the first

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_3_en.pdf

Nitride Heterojunction Bipolar Transistor with Regrown Base Layer

communications between the base stations for cellular phones. Compared with Si and GaAs, nitride semiconductors

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report14.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength LED structure Top view of LED

https://www.rd.ntt/e/brl/result/activities/file/report06/k01.html

国際会議招待講演一覧（2012年）

", International Workshop on Nitride semiconductors, Sapporo, Japan (Oct. 2012). (9) T. Akasaka, Y. Kobayashi, C. H

https://www.rd.ntt/brl/result/activities/file/report12/data06.html

List of Invited Talks at International Conferences (2012)

on step-free GaN surface", International Workshop on Nitride semiconductors, Sapporo, Japan (Oct

https://www.rd.ntt/e/brl/result/activities/file/report12/data06e.html

谷保 芳孝 | NTT R&D Website

　International Workshop on Nitride Semiconductors (IWN) Best Paper Award 2011年　The International Symposium on

https://www.rd.ntt/organization/researcher/superior/s_030.html

Member - NTT Basic Research Laboratories

Taniyasu Aluminum Nitride (AlN) taniyasu.yoshitaka Koji Onomitsu III-V semiconductors Onomitsu.koji

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/list1.html

Overview of Quantum Optics and Optical Materials Research

structure in nitride semiconductors). Major results obtained this fiscal year 1999 are reported in the

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qp/qp_overview.htm

Step-free GaN Surfaces Fabricated by Selective-area Metalorganic Vapor Phase Epitaxy

technique can control the hetero-interfaces of nitride semiconductors in an atomic scale and realize high

https://www.rd.ntt/e/brl/result/activities/file/report09/k01.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength Aluminum Nitride Light

https://www.rd.ntt/e/brl/result/activities/file/report06/report02.html

Layered Boron Nitride as a Release Layer for Mechanical Transfer of GaN-Based Devices

nitride semiconductors of sufficient quality is problematic. Several techniques have been investigated to

https://www.rd.ntt/e/brl/result/activities/file/report11/report02.html

GaN-Based Vertical Cavity Surface Emitting Lasers

microcavities, because the exciton oscillator strength and binding energy of III-nitride semiconductors are

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report17.html

Welcome to Yoshitaka Taniyasu's Homepage

-nitride semiconductors by spectroscopic ellipsometry) 2001-2003 Research associate, NTT Basic research

https://www.rd.ntt/brl/people/taniyasu/

Distinguished Technical Members

microscopy (STM). His current interests are epitaxial growth of nitride semiconductors and nitride

https://www.rd.ntt/e/brl/result/activities/file/report00/E/member05_e.html

Step-free GaN films Grown by Selective-area Metalorganic Vapor Phase Epitaxy

Kasu Materials Science Laboratory Step-free surfaces of GaN-related nitride semiconductors have been

https://www.rd.ntt/e/brl/result/activities/file/report09/report04.html

5th NTT-BRL school at NTT Atsugi R&D Center

Devices using Group-III Nitride Semiconductors" --- Dr. Toshiki Makimoto     Group-III nitrides, such as

https://www.rd.ntt/brl/event/brlschool2009/outline06.html

国際会議招待講演一覧（2009）

: physics and device structure", SPIE Photonics West, San Jose, U.S.A. (Jan. 2009). (3) M. Kasu, "Nitride

https://www.rd.ntt/brl/result/activities/file/report09/data06.html

List of Invited Talks at International Conferences (2009)

: physics and device structure", SPIE Photonics West, San Jose, U.S.A. (Jan. 2009). (3) M. Kasu, "Nitride

https://www.rd.ntt/e/brl/result/activities/file/report09/data06.html