Result for "Electron devices",569

Overview of Device Physics Research

electron devices, such as ultimately-low-energy-consuming single-electron devices. We are also doing

https://www.rd.ntt/e/brl/result/activities/file/report99/E/dp/dp_overview.htm

Overview of Device Physics Research

Laboratory is responsible for creating novel electron devices indispensable for the technological foundation

https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan1e.htm

Microsoft Word - CV-AkiraFujiwara.doc

-dimensional structures  Silicon nanostructures and their application to nanodevices  Single-electron devices

https://www.rd.ntt/brl/people/afuji/CV-AkiraFujiwara.pdf

Long-distance transport of electron spins for spin-based logic devices｜NTT Basic Research Laboratories | NTT R&D Website

Long-distance transport of electron spins for spin-based logic devices｜NTT Basic Research

https://www.rd.ntt/e/brl/latesttopics/2016/03/latest_topics_201603082029.html

Overview of Device Physics Research

temperature operation of single electron devices, we are developing nanofabrication processes including

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report01_e.html

Overview of Quantum Electron Physics Research

mode on high- index crystal surfaces and application to novel electron devices, and observation of

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

High-speed single-electron transfer toward high-accuracy current standards｜NTT Basic Research Laboratories | NTT R&D Website

Research Laboratories have been developing single-electron devices that can manipulate and detect an

https://www.rd.ntt/e/brl/latesttopics/2014/10/latest_topics_201410061802.html

Pursuing Electric Current Standard Using Single-electron Transfer Devices through International Collaboration | NTT R&D Website

Pursuing Electric Current Standard Using Single-electron Transfer Devices through International

https://www.rd.ntt/e/research/JN202412_30711.html

国際会議招待講演一覧 (2004)

-Electron Devices fabricated by MOS Processes,” European Materials Research Society (E-MRS) Spring Meeting

https://www.rd.ntt/brl/result/activities/file/report04/data11.html

List of Invited Talks at International Conferences (2004)

-Electron Devices fabricated by MOS Processes,” European Materials Research Society (E-MRS) Spring Meeting

https://www.rd.ntt/e/brl/result/activities/file/report04/data11.html

Akira Fujiwara's HOME PAGE

nanodevices Single-electron devices and their applications Education 1991 M.S. in Applied Physics, The

https://www.rd.ntt/brl/people/afuji/

Akira Fujiwara | NTT R&D Website

Professor, Hokkaido University 2013.4-2014.3. Publications Books Single-electron logic devices, in "Silicon

https://www.rd.ntt/e/organization/researcher/superior/s_016.html

Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher｜NTT R&D Website

single-electron devices. ◆PROFILE： Researcher at Department of Physical Electronics, Tokyo Institute of

https://www.rd.ntt/e/basic_research/0002.html

Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher｜NTT R&D Website

single-electron devices. ◆PROFILE： Researcher at Department of Physical Electronics, Tokyo Institute of

https://www.rd.ntt/e/research/basic_research0002.html

Graphene p-n junction as an electronic beam splitter｜NTT Basic Research Laboratories | NTT R&D Website

-distance transport of electron spins for spin-based logic devices NTT Basic Research Laboratories (NTT-BRL

https://www.rd.ntt/e/brl/latesttopics/2015/09/latest_topics_201509041810.html

Overview of Quantum Physics and Electronics Research

quantum well structures, high-temperature electron devices, and short-wavelength light emitting devices

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Conferences -KN's HP-

Electron Subbands in Thin SOI　MOSFETs 2009 International Conference on Solid State Devices and Materials

https://www.rd.ntt/brl/people/knishi50/conference.html

Elucidation of Spin Wave Physics Using a Graphene Electron Interferometer｜NTT Basic Research Laboratories | NTT R&D Website

Physics Using a Graphene Electron Interferometer -Contributing to Magnonics toward Ultra-low-power Devices

https://www.rd.ntt/e/brl/latesttopics/2021/12/latest_topics_202112081339.html

Research>>New Applications -KN's HP-

electrons, we use single-electron devices. Among them, a one-by-one electron transfer device composed of

https://www.rd.ntt/brl/people/knishi50/research_application.html

Research>>Single electron -KN's HP-

.     Single electrons can be treated by various kinds of nanoscale devices called "single-electron devices

https://www.rd.ntt/brl/people/knishi50/research_SED.html

藤原聡のホームページ

: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett

https://www.rd.ntt/brl/people/afuji/index-j.html

Single-Electron Multiple-Valued Logic

Fujiwara, and Yasuo Takahashi Device Physics Laboratory Single-electron devices are quite suitable for

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report02.html

国際会議招待講演一覧 (2005)

: Electron-nuclear spin coupling in mesoscopic quantum Hall devices", The American Physical Society, Los

https://www.rd.ntt/brl/result/activities/file/report05/data10.html

List of Invited Talks at International Conferences (2005)

resistance oscillations: Electron-nuclear spin coupling in mesoscopic quantum Hall devices", The American

https://www.rd.ntt/e/brl/result/activities/file/report05/data11.html

Observation of quantum-mechanical ultrafast coherent oscillations in a silicon single-electron device｜NTT Basic Research Laboratories | NTT R&D Website

(the devices are referred to as single-electron transfer devices*4), to realize a high-accuracy current

https://www.rd.ntt/e/brl/latesttopics/2019/11/latest_topics_201911051001.html

List of Invited Talks at International Conferences (Fiscal 2003) I. Device Physics

, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium on

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data12.html

国際会議招待講演一覧　（2003年度）　I.　デバイス物理関連

. Fujiwara, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium

https://www.rd.ntt/brl/result/activities/file/report03/J/data12.html

Room-temperature single-electron transfer and detection with silicon nanodevics

university Single-electron devices (SEDs) have great attention because of their ultra-low power consumption

https://www.rd.ntt/e/brl/result/activities/file/report04/report16.html

Overview of Quantum Physics and Electronics Research

short-wavelength light emitting devices). (3) Electron field emission in AlN cold cathode materials

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report11_e.html

Friedel Oscillations in 2D Electron Gas Systems at Semiconductor Surfaces

Friedel Oscillations in 2D Electron Gas Systems at Semiconductor Surfaces Friedel Oscillations in

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report13_e.html

Friedel Oscillations in 2D Electron Gas Systems at Semiconductor Surfaces

Friedel Oscillations in 2D Electron Gas Systems at Semiconductor Surfaces Friedel Oscillations in

https://www.rd.ntt/e/brl/result/activities/file/report00/E/k01_report_e.html

List of Invited Talks at International Conferences I. Device Physics

International Conferences I. Device Physics I. Device Physics （１） Y. Takahashi, "Silicon single-electron devices

https://www.rd.ntt/e/brl/result/activities/file/report01/E/data12.html

国際会議招待講演一覧　（2001年度）　I.　デバイス物理関連

-electron devices and their circuit applications", The 1st Annual US-Korea-Japan Workshop on Nanostructure

https://www.rd.ntt/brl/result/activities/file/report01/J/data12.html

Electrical current generation by sorting thermal noise｜NTT Basic Research Laboratories | NTT R&D Website

electrical currents. However, if the noise can be observed at the single-electron level and if electrons

https://www.rd.ntt/e/brl/latesttopics/2017/05/latest_topics_201705161434.html

Overview of Quantum Electron Physics Research

Overview of Quantum Electron Physics Research Overview of Quantum Electron Physics Research

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report11.html

Using Silicon Transistors to Enable Control and Detection of Single Electrons toward Developing High-performance Devices and Reducing Energy Consumption | NTT R&D Website

Electrons toward Developing High-performance Devices and Reducing Energy Consumption single-electron control

https://www.rd.ntt/e/research/JN202505_33797.html

Electronic State of Molecular Devices at Room Temperature

Electronic State of Molecular Devices at Room Temperature Electronic State of Molecular Devices at

https://www.rd.ntt/e/brl/result/activities/file/report05/report09.html

Compound Semiconductor Micro/Nanomechanical Devices

Compound Semiconductor Micro/Nanomechanical Devices Compound Semiconductor Micro/Nanomechanical

https://www.rd.ntt/e/brl/result/activities/file/report02/E/k03.html

Deviation from the Law of Energy Equipartition in a Small Dynamic-Random-Access Memory: Analysis about Thermal Noise with Single-Electron Resolution

about Thermal Noise with Single-Electron Resolution Deviation from the Law of Energy Equipartition in a

https://www.rd.ntt/e/brl/result/activities/file/report14/report10E.html

Compound Semiconductor Device Research Group｜Device Technology Laboratories｜NTT R&D Website

compound semiconductors with high speed and functionality. These devices will lead to the advancement and

https://www.rd.ntt/e/dtl/technology/compound_semiconductor_device_research_group_ntt_device_technology_laboratories_ntt_rd_website.html

World-record accuracy of gigahertz high-speed single-electron transfer｜NTT Basic Research Laboratories | NTT R&D Website

-electron transfer devices using silicon transistors. Silicon nanofabrication techniques accumulated over

https://www.rd.ntt/e/brl/latesttopics/2016/07/latest_topics_201607061949.html

Compound Semiconductor Micro/Nanomechanical Devices

mechanical structures in order to develop novel semiconductor devices. Figure 1 shows a scanning electron

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report13.html

Spin-resolved oscilloscope for charge and spin signals｜NTT Basic Research Laboratories | NTT R&D Website

devices will be achieved. => Press Release => Quantum Solid State Physics Research Group An electron has

https://www.rd.ntt/e/brl/latesttopics/2017/03/latest_topics_201703141752.html

Tunneling Spectroscopy of Electron Subbands in Thin SOI-MOSFETs

Tunneling Spectroscopy of Electron Subbands in Thin SOI-MOSFETs Tunneling Spectroscopy of Electron

https://www.rd.ntt/e/brl/result/activities/file/report09/report14.html

Electron Phase Sensing in a High Q Mechanical Resonator

Electron Phase Sensing in a High Q Mechanical Resonator Electron Phase Sensing in a High Q

https://www.rd.ntt/e/brl/result/activities/file/report06/report16.html

Donor-Based Single Electron Pump

single electron pumps [3]. Our devices consist of Si nanowire MOSFETs in series fabricated on a silicon

https://www.rd.ntt/e/brl/result/activities/file/report12/report12e.html

Fabrication Method for IC-Oriented Si Single-Electron Transistors

Katsumi Murase Device Physics Laboratory Single-electron devices are promising for future LSIs because of

https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan3e.htm

Overview of Quantum Physics and Electronics Research

devices. Quantum Solid State Physics Research Group and Wide-Bandgap Semiconductor Research Group are

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report11.html

国際会議招待講演一覧　（2000年度）　Ⅰ.　デバイス物理関連

single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued

https://www.rd.ntt/brl/result/activities/file/report00/J/data17.html

List of Invited Talks at International Conferences (Fiscal 2000) I. Device Physics

single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued

https://www.rd.ntt/e/brl/result/activities/file/report00/E/data17_e.html