Result for "Single electron devices",427

Overview of Device Physics Research

electron devices, such as ultimately-low-energy-consuming single-electron devices. We are also doing

https://www.rd.ntt/e/brl/result/activities/file/report99/E/dp/dp_overview.htm

Overview of Device Physics Research

temperature operation of single electron devices, we are developing nanofabrication processes including

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report01_e.html

Microsoft Word - CV-AkiraFujiwara.doc

-dimensional structures  Silicon nanostructures and their application to nanodevices  Single-electron devices

https://www.rd.ntt/brl/people/afuji/CV-AkiraFujiwara.pdf

High-speed single-electron transfer toward high-accuracy current standards｜NTT Basic Research Laboratories | NTT R&D Website

Research Laboratories have been developing single-electron devices that can manipulate and detect an

https://www.rd.ntt/e/brl/latesttopics/2014/10/latest_topics_201410061802.html

Overview of Device Physics Research

because it can operate under the control of only one electron. By employing single-electron devices for

https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan1e.htm

Akira Fujiwara's HOME PAGE

nanodevices Single-electron devices and their applications Education 1991 M.S. in Applied Physics, The

https://www.rd.ntt/brl/people/afuji/

Pursuing Electric Current Standard Using Single-electron Transfer Devices through International Collaboration | NTT R&D Website

Pursuing Electric Current Standard Using Single-electron Transfer Devices through International

https://www.rd.ntt/e/research/JN202412_30711.html

Conferences -KN's HP-

presentation slides Room-temperature-operating single-electron devices using silicon nanowire MOSFET [invited

https://www.rd.ntt/brl/people/knishi50/conference.html

Room-temperature single-electron transfer and detection with silicon nanodevics

university Single-electron devices (SEDs) have great attention because of their ultra-low power consumption

https://www.rd.ntt/e/brl/result/activities/file/report04/report16.html

国際会議招待講演一覧 (2004)

, “Fabrication and Application of Silicon Single-Electron Devices,” Ultimate Lithography and Nanodevice

https://www.rd.ntt/brl/result/activities/file/report04/data11.html

List of Invited Talks at International Conferences (2004)

, “Fabrication and Application of Silicon Single-Electron Devices,” Ultimate Lithography and Nanodevice

https://www.rd.ntt/e/brl/result/activities/file/report04/data11.html

Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher｜NTT R&D Website

single-electron devices. ◆PROFILE： Researcher at Department of Physical Electronics, Tokyo Institute of

https://www.rd.ntt/e/basic_research/0002.html

Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher｜NTT R&D Website

single-electron devices. ◆PROFILE： Researcher at Department of Physical Electronics, Tokyo Institute of

https://www.rd.ntt/e/research/basic_research0002.html

藤原聡のホームページ

: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett

https://www.rd.ntt/brl/people/afuji/index-j.html

Akira Fujiwara | NTT R&D Website

Professor, Hokkaido University 2013.4-2014.3. Publications Books Single-electron logic devices, in "Silicon

https://www.rd.ntt/e/organization/researcher/superior/s_016.html

Research>>Single electron -KN's HP-

.     Single electrons can be treated by various kinds of nanoscale devices called "single-electron devices

https://www.rd.ntt/brl/people/knishi50/research_SED.html

Research>>New Applications -KN's HP-

electrons, we use single-electron devices. Among them, a one-by-one electron transfer device composed of

https://www.rd.ntt/brl/people/knishi50/research_application.html

Single-Electron Multiple-Valued Logic

Fujiwara, and Yasuo Takahashi Device Physics Laboratory Single-electron devices are quite suitable for

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report02.html

Observation of quantum-mechanical ultrafast coherent oscillations in a silicon single-electron device｜NTT Basic Research Laboratories | NTT R&D Website

(the devices are referred to as single-electron transfer devices*4), to realize a high-accuracy current

https://www.rd.ntt/e/brl/latesttopics/2019/11/latest_topics_201911051001.html

国際会議招待講演一覧　（2001年度）　I.　デバイス物理関連

. Namatsu, and Y. Takahashi, "Single-electron devices formed by pattern-dependent oxidation", 8th

https://www.rd.ntt/brl/result/activities/file/report01/J/data12.html

List of Invited Talks at International Conferences I. Device Physics

International Conferences I. Device Physics I. Device Physics （１） Y. Takahashi, "Silicon single-electron devices

https://www.rd.ntt/e/brl/result/activities/file/report01/E/data12.html

国際会議招待講演一覧 (2005)

. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa, "Silicon-based single-electron devices", Fourth

https://www.rd.ntt/brl/result/activities/file/report05/data10.html

List of Invited Talks at International Conferences (2005)

. Inokawa, "Silicon-based single-electron devices", Fourth International Conference on Silicon Epitaxy and

https://www.rd.ntt/e/brl/result/activities/file/report05/data11.html

Using Silicon Transistors to Enable Control and Detection of Single Electrons toward Developing High-performance Devices and Reducing Energy Consumption | NTT R&D Website

Electrons toward Developing High-performance Devices and Reducing Energy Consumption single-electron control

https://www.rd.ntt/e/research/JN202505_33797.html

World-record accuracy of gigahertz high-speed single-electron transfer｜NTT Basic Research Laboratories | NTT R&D Website

optimized. In addition, gallium arsenide-based single-electron transfer devices, in which high accuracy was

https://www.rd.ntt/e/brl/latesttopics/2016/07/latest_topics_201607061949.html

Deviation from the Law of Energy Equipartition in a Small Dynamic-Random-Access Memory: Analysis about Thermal Noise with Single-Electron Resolution

about Thermal Noise with Single-Electron Resolution Deviation from the Law of Energy Equipartition in a

https://www.rd.ntt/e/brl/result/activities/file/report14/report10E.html

Fabrication Method for IC-Oriented Si Single-Electron Transistors

Katsumi Murase Device Physics Laboratory Single-electron devices are promising for future LSIs because of

https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan3e.htm

Electrical current generation by sorting thermal noise｜NTT Basic Research Laboratories | NTT R&D Website

electrical currents. However, if the noise can be observed at the single-electron level and if electrons

https://www.rd.ntt/e/brl/latesttopics/2017/05/latest_topics_201705161434.html

Donor-Based Single Electron Pump

single electron pumps [3]. Our devices consist of Si nanowire MOSFETs in series fabricated on a silicon

https://www.rd.ntt/e/brl/result/activities/file/report12/report12e.html

国際会議招待講演一覧　（2003年度）　I.　デバイス物理関連

. Fujiwara, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium

https://www.rd.ntt/brl/result/activities/file/report03/J/data12.html

List of Invited Talks at International Conferences (Fiscal 2003) I. Device Physics

, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium on

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data12.html

Overview of Quantum Electron Physics Research

techniques, our research focuses on single-electron control, new electron transport mechanisms and wide

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

Nanodevices Research Group

! Our Research Research on novel functional silicon quantum devices using high-accuracy single-electron

https://www.rd.ntt/brl/group_introduction/butsude-g/

Papers>>Single electrons -KN's HP-

elementary charge. Single-charge transfer devices are special SEDs that enable single-electron transfer

https://www.rd.ntt/brl/people/knishi50/paper_1.html

Electronic State of Molecular Devices at Room Temperature

. the single-electron charging effect, at room temperature [Fig. 1]. A simulation based on single

https://www.rd.ntt/e/brl/result/activities/file/report05/report09.html

国際会議招待講演一覧　（2000年度）　Ⅰ.　デバイス物理関連

single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued

https://www.rd.ntt/brl/result/activities/file/report00/J/data17.html

List of Invited Talks at International Conferences (Fiscal 2000) I. Device Physics

single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued

https://www.rd.ntt/e/brl/result/activities/file/report00/E/data17_e.html

Manipulation of Elementary Charge in a Silicon Charge-Coupled Device

    Single-electron (SE) devices have been attracting much attention in light of the underlying physics and

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report02_e.html

Overview of Quantum Physics and Electronics Research

crystal growth and advanced device fabrication techniques, focuses on single-electron control, new

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

Overview of Device Physics Research

analyzed and applied to a new functional circuit. In single electron transfer devices (charge-coupled

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report01.html

Absolute Accuracy Evaluation of Si Single-Electron Transfer Devices

Absolute Accuracy Evaluation of Si Single-Electron Transfer Devices Absolute Accuracy Evaluation

https://www.rd.ntt/e/brl/result/activities/file/report11/report13.html

Invited Talks

-integrated single-electron devices fabricated by pattern-dependent oxidation (PADOX)", QDS'98, Sapporo, Japan

https://www.rd.ntt/e/brl/result/activities/file/report98/E/data/shotai.e.html

Contents

Contents Frontispiece Silicon Single-Electron Pump Hysteresis in micro-magnet Compound

https://www.rd.ntt/e/brl/result/activities/file/report02/E/2002_e.html

国際会議招待講演一覧

. Murase, "Si island-integrated single-electron devices fabricated by pattern-dependent oxidation (PADOX

https://www.rd.ntt/brl/result/activities/file/report98/J/data/newshotai.html

Home -KN's HP-

talk about single electron devices was given at China-Japan International Workshop on Quantum

https://www.rd.ntt/brl/people/knishi50/

Room-Temperature-Operating Digital-Analog Converter with Silicon Nanodevices

single-electron turnstile, which transfers electrons one by one, is promising for ultra-low-power

https://www.rd.ntt/e/brl/result/activities/file/report05/report15.html

国際会議招待講演一覧（2009）

. Nishiguchi, and Y. Ono, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in

https://www.rd.ntt/brl/result/activities/file/report09/data07.html

List of Invited Talks at International Conferences (2009)

, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in Nanotechnology International

https://www.rd.ntt/e/brl/result/activities/file/report09/data07.html

国際会議招待講演一覧（2008）

, and Y. Takahashi "Silicon Single-Electron Devices and Their Applications", TND 2008 Technical Forum

https://www.rd.ntt/brl/result/activities/file/report08/data10.html

List of Invited Talks at International Conferences (2008)

, and Y. Takahashi "Silicon Single-Electron Devices and Their Applications", TND 2008 Technical Forum

https://www.rd.ntt/e/brl/result/activities/file/report08/data11.html

Papers -KN's HP-

sensing devices. Characteristics of Si Single-Electron Transistor under Illumination ECS Trans. vol. 92

https://www.rd.ntt/brl/people/knishi50/paper_all.html

List of Invited Talks at International Conferences (Fiscal 2003) III. Quantum Electron Physics

-Media-Based Information Technologies, Sapporo, Japan (Feb. 2003). (4) T. Fujisawa, “Single electron

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data14.html

Accuracy Evaluation of Si Single-Electron Transfer Devices at Extremely Low Temperature

Accuracy Evaluation of Si Single-Electron Transfer Devices at Extremely Low Temperature Accuracy

https://www.rd.ntt/e/brl/result/activities/file/report13/report12E.html

Silicon Single-Electron Pump

Physics Laboratory Single-electron devices (SEDs) are promising for future ultra-large-scale integrated

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report02.html

藤原 聡 | NTT R&D Website

-electron logic devices, in "Silicon Nanoelectronics", CRC press Tayler & Francis Group, 2005.（共著） Single

https://www.rd.ntt/organization/researcher/superior/s_016.html

Overview of Materials Science Research

the manipulation of single molecules, and researching into information processing devices based on

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report06_e.html

Overview of Research in Laboratories

phononic crystals, observed Wigner solids in high magnetic fields, achieved high-speed single-electron

https://www.rd.ntt/e/brl/result/activities/file/report14/report00E.html

International Symposium on Nanoscale Transport and Technology (ISNTT2011)

solid-state quantum computers, single-electron transistors, nanomechanical systems and spintronic

https://www.rd.ntt/e/brl/result/activities/file/report10/data02.html

Single-Electron Stochastic Resonance Using Nanowire Transistors

Single-Electron Stochastic Resonance Using Nanowire Transistors Single-Electron Stochastic

https://www.rd.ntt/e/brl/result/activities/file/report11/report12.html

Overview of Research in Laboratories

freedom such as single electrons, mechanical oscillations, quantum coherent states, electron correlation

https://www.rd.ntt/e/brl/result/activities/file/report16/report00E.html

Demonstration of Electron Flying Qubit Operation｜NTT Basic Research Laboratories | NTT R&D Website

quantum superposition states of propagating single electron in graphene- Tokyo -Jan. 16, 2024 - NTT

https://www.rd.ntt/e/brl/latesttopics/2024/01/latest_topics_202401161558.html

Biography -KN's HP-

, 2013 2013 JSAP PAPER AWARD 2013 “Single-Electron Stochastic Resonance Using Si Nanowire Transistors

https://www.rd.ntt/brl/people/knishi50/biography.html

国際会議招待講演一覧（2010年）

. Fujiwara, K. Nishiguchi, and Y. Ono, "Single-electron transfer technology using Si nanowire MOSFETs", The

https://www.rd.ntt/brl/result/activities/file/report10/data08.html

List of Invited Talks at International Conferences (2010)

. Nishiguchi, and Y. Ono, "Single-electron transfer technology using Si nanowire MOSFETs", The 2010

https://www.rd.ntt/e/brl/result/activities/file/report10/data08.html

英文論文一覧

. Takahashi, "Current quantization due to single-electron transfer in Si-wire charge-coupled devices," Appl

https://www.rd.ntt/brl/result/activities/file/report04/data14.html

List of Research Papers Published in International Journals

tunable-barrier single-electron turnstiles and charge-coupled devices," J. Appl. Phys. 96 (9), 5254-5266

https://www.rd.ntt/e/brl/result/activities/file/report04/data14.html

Overview of Research in Laboratories

photonic devices with various functions in a single chip. Furthermore, we are targeting extreme reduction

https://www.rd.ntt/e/brl/result/activities/file/report12/report01e.html

List of Invited Talks at International Conferences

. Namatsu, M. Nagase, K. Kurihara, and K. Murase, "Si single-electron devices: recent attempts towards high

https://www.rd.ntt/e/brl/result/activities/file/report99/E/data/invited_talks.htm

国際会議招待講演一覧　（2003年度）　III．量子電子物性関連

, Sapporo, Japan (Feb. 2003). （４） T. Fujisawa, “Single electron dynamics in quantum dots”, Sweden-Japan

https://www.rd.ntt/brl/result/activities/file/report03/J/data14.html

Award Winner's List (Fiscal 2003)

. Fujisawa “Study of single-electron dynamics in quantum dot” Nov. 26, 2003 [back]　[Top]　[Next]

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data04.html

国際会議招待講演一覧

. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase, "Si single-electron devices: recent attempts

https://www.rd.ntt/brl/result/activities/file/report99/J/data/newshotai.htm

Multigate Single-Electron Transistor

Multigate Single-Electron Transistor Multigate Single-Electron Transistor: Application to an

https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan2e.htm

国際会議招待講演一覧　（2002年度）　I.　デバイス物理関連

, Y. Ono, A. Fujiwara and H. Inokawa, “Silicon single-electron devices”, Euro. Sol. Stat. Circ. Conf

https://www.rd.ntt/brl/result/activities/file/report02/J/data12.html

List of Invited Talks at International Conferences (Fiscal 2002) I. Device Physics

. Ono, A. Fujiwara and H. Inokawa, “Silicon single-electron devices”, Euro. Sol. Stat. Circ. Conf

https://www.rd.ntt/e/brl/result/activities/file/report02/E/data12.html

english.pdf

single electron transistors, single hole transfer devices, nanofabrication processes required for

https://www.rd.ntt/e/brl/result/activities/file/report00/english.pdf

Book1

～電子をひとつひとつ見て操る～ Feedback control of silicon single-electron devices -Observation and manipulation in

https://www.rd.ntt/brl/event/sp2016/poster/files/poster_list.pdf

Density-of-states Imaging in Semiconductor Heterostructures

Tohoku University As semiconductor devices develop and become highly integrated with ultra fine processes

https://www.rd.ntt/e/brl/result/activities/file/report06/report19.html

国際会議招待講演一覧 (2006)

. Takahashi, and H. Inokawa, "Single-Electron Transfer in Silicon: Towards Single-Dopant Electronics", 3rd

https://www.rd.ntt/brl/result/activities/file/report06/data09.html

List of Invited Talks at International Conferences (2006)

. Inokawa, "Single-Electron Transfer in Silicon: Towards Single-Dopant Electronics", 3rd International

https://www.rd.ntt/e/brl/result/activities/file/report06/data10.html

Compound Semiconductor Micro/Nanomechanical Devices

mechanical structures in order to develop novel semiconductor devices. Figure 1 shows a scanning electron

https://www.rd.ntt/e/brl/result/activities/file/report02/E/report13.html

FSNS2003

) Photoluminescence from single walled carbon nanotube T. Fukui (Hokkaido University) GaAs single electron devices and

https://www.rd.ntt/brl/event/fsns2003/invite.html

Silicon Single-Electron Inverter

Silicon Single-Electron Inverter Silicon Single-Electron Inverter Yukinori Ono, Yasuo Takahashi

https://www.rd.ntt/e/brl/result/activities/file/report99/E/dp/dp1.htm

Annual_report_2023_E.pdf

Laboratory Groups and Research Themes Nanodevice Research Group Single-electron Devices for Ultimate

https://www.rd.ntt/brl/brl/result/activities/file/annual_report/Annual_report_2023_E.pdf

Annual_report_2023_E.pdf

Laboratory Groups and Research Themes Nanodevice Research Group Single-electron Devices for Ultimate

https://www.rd.ntt/e/brl/result/activities/file/annual_report/Annual_report_2023_E.pdf

Latest Research Contents | NTT Basic Research Laboratories | NTT R&D Website

Research Group 2026/04/23 NTT Achieves World's First Simultaneous Single-Electron-Scale Measurement of Heat

https://www.rd.ntt/e/brl/latesttopics/

Invited Speakers - ISNTT2011 - International Symposium on Nanoscale Transport and Technology

. "Si Single Dopant Devices" John Teufel - NIST "Circuit Cavity Electromechanics in the Strong Coupling

https://www.rd.ntt/brl/event/isntt2011/invited_speakers.html

Contents

Nanowire Transistors Absolute Accuracy Evaluation of Si Single-Electron Transfer Devices A New Charge

https://www.rd.ntt/e/brl/result/activities/file/report11/2011_E.html

Research Activities in NTT Basic Research Laboratories

applied to a new functional circuit. In single electron transfer devices (charge- coupled devices), we

https://www.rd.ntt/e/brl/result/activities/file/report01/BRLReports_E.pdf

Creation of novel material Sr3OsO6 with the highest ferromagnetic transition temperature among insulators｜NTT Basic Research Laboratories | NTT R&D Website

. Furthermore, the Sr3OsO6 was synthesized in the form of single-crystalline thin films.*4 This suggests that

https://www.rd.ntt/e/brl/latesttopics/2019/02/latest_topics_201902121401.html

Electron Phase Sensing in a High Q Mechanical Resonator

electron trajectories and the electron interference in only a single electron loop gives rise to the

https://www.rd.ntt/e/brl/result/activities/file/report06/report16.html

Overview of Research in Laboratories

degrees of freedom such as single electrons, mechanical oscillations, quantum coherent states, electron

https://www.rd.ntt/e/brl/result/activities/file/report15/report00E.html

Poster presentaion - SciencePlaza 2009 - NTT Basic Reseach Laboratories

- towards single-dopant electronics - PDF Mohammed Khalafalla / Y.Ono 11 Electron dynamics in single

https://www.rd.ntt/brl/event/splaza2009/poster_e.html

ISNTT 2015

, topological insulator, spintronics, single-electron devices, and semiconductor/superconductor quantum bit

https://www.rd.ntt/e/brl/result/activities/file/report15/data02E.html

Nanodevices Research Group | NTT Basic Research Laboratories | NTT R&D Website

detection using single-electron devices and nanometer-scale transistors. Based on these advances, we explore

https://www.rd.ntt/e/brl/group_introduction/group_004.html

Overview of Quantum Physics and Electronics Research

technique to control a single electron motion in a coupled quantum dot coherently. We have demonstrated one

https://www.rd.ntt/e/brl/result/activities/file/report03/E/report11.html

Two-Dimensional Electron Spin System Investigated by Nuclear Spin Measurements

Two-Dimensional Electron Spin System Investigated by Nuclear Spin Measurements Two-Dimensional

https://www.rd.ntt/e/brl/result/activities/file/report05/report19.html

国際会議招待講演一覧 (2006)

, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi, "Room-temperature-operating Single-electron

https://www.rd.ntt/brl/result/activities/file/report07/data09.html

List of Invited Talks at International Conferences (2007)

. Inokawa, and Y. Takahashi, "Room-temperature-operating Single-electron Devices Using Silicon Nanowire

https://www.rd.ntt/e/brl/result/activities/file/report07/data10.html

Even If Facing Difficulties, Create New Value While Building on the Achievements of Your Predecessors｜NTT R&D Website

senior distinguished researcher, is researching silicon single-electron devices to enable accurate

https://www.rd.ntt/e/research/JN202112_16407.html

Coherent Coupling of a Gap-Tunable flux Qubit to an Electron Spin Ensemble in Diamond

Coherent Coupling of a Gap-Tunable flux Qubit to an Electron Spin Ensemble in Diamond (a

https://www.rd.ntt/e/brl/result/activities/file/report11/k03.html