Overview of Device Physics Research
electron devices, such as ultimately-low-energy-consuming single-electron devices. We are also doing
https://www.rd.ntt/e/brl/result/activities/file/report99/E/dp/dp_overview.htm
Overview of Device Physics Research
temperature operation of single electron devices, we are developing nanofabrication processes including
https://www.rd.ntt/e/brl/result/activities/file/report00/E/report01_e.html
Microsoft Word - CV-AkiraFujiwara.doc
-dimensional structures Silicon nanostructures and their application to nanodevices Single-electron devices
https://www.rd.ntt/brl/people/afuji/CV-AkiraFujiwara.pdf
High-speed single-electron transfer toward high-accuracy current standards|NTT Basic Research Laboratories | NTT R&D Website
Research Laboratories have been developing single-electron devices that can manipulate and detect an
https://www.rd.ntt/e/brl/latesttopics/2014/10/latest_topics_201410061802.html
Overview of Device Physics Research
because it can operate under the control of only one electron. By employing single-electron devices for
https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan1e.htm
Akira Fujiwara's HOME PAGE
nanodevices Single-electron devices and their applications Education 1991 M.S. in Applied Physics, The
https://www.rd.ntt/brl/people/afuji/
Pursuing Electric Current Standard Using Single-electron Transfer Devices through International Collaboration | NTT R&D Website
Pursuing Electric Current Standard Using Single-electron Transfer Devices through International
https://www.rd.ntt/e/research/JN202412_30711.html
Conferences -KN's HP-
presentation slides Room-temperature-operating single-electron devices using silicon nanowire MOSFET [invited
https://www.rd.ntt/brl/people/knishi50/conference.html
Room-temperature single-electron transfer and detection with silicon nanodevics
university Single-electron devices (SEDs) have great attention because of their ultra-low power consumption
https://www.rd.ntt/e/brl/result/activities/file/report04/report16.html
List of Invited Talks at International Conferences (2004)
, “Fabrication and Application of Silicon Single-Electron Devices,” Ultimate Lithography and Nanodevice
https://www.rd.ntt/e/brl/result/activities/file/report04/data11.html
国際会議招待講演一覧 (2004)
, “Fabrication and Application of Silicon Single-Electron Devices,” Ultimate Lithography and Nanodevice
https://www.rd.ntt/brl/result/activities/file/report04/data11.html
Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher|NTT R&D Website
single-electron devices. ◆PROFILE: Researcher at Department of Physical Electronics, Tokyo Institute of
https://www.rd.ntt/e/basic_research/0002.html
Accurately capturing individual electrons and transferring them at high speed. Single-electron transfer technology paves the way for an ultra-precise current standard. Interview with Gento Yamahata, Distinguished Researcher|NTT R&D Website
single-electron devices. ◆PROFILE: Researcher at Department of Physical Electronics, Tokyo Institute of
https://www.rd.ntt/e/research/basic_research0002.html
Akira Fujiwara | NTT R&D Website
Professor, Hokkaido University 2013.4-2014.3. Publications Books Single-electron logic devices, in "Silicon
https://www.rd.ntt/e/organization/researcher/superior/s_016.html
藤原聡のホームページ
: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett
https://www.rd.ntt/brl/people/afuji/index-j.html
Research>>Single electron -KN's HP-
. Single electrons can be treated by various kinds of nanoscale devices called "single-electron devices
https://www.rd.ntt/brl/people/knishi50/research_SED.html
Research>>New Applications -KN's HP-
electrons, we use single-electron devices. Among them, a one-by-one electron transfer device composed of
https://www.rd.ntt/brl/people/knishi50/research_application.html
Single-Electron Multiple-Valued Logic
Fujiwara, and Yasuo Takahashi Device Physics Laboratory Single-electron devices are quite suitable for
https://www.rd.ntt/e/brl/result/activities/file/report01/E/report02.html
Observation of quantum-mechanical ultrafast coherent oscillations in a silicon single-electron device|NTT Basic Research Laboratories | NTT R&D Website
(the devices are referred to as single-electron transfer devices*4), to realize a high-accuracy current
https://www.rd.ntt/e/brl/latesttopics/2019/11/latest_topics_201911051001.html
国際会議招待講演一覧 (2001年度) I. デバイス物理関連
. Namatsu, and Y. Takahashi, "Single-electron devices formed by pattern-dependent oxidation", 8th
https://www.rd.ntt/brl/result/activities/file/report01/J/data12.html
List of Invited Talks at International Conferences I. Device Physics
International Conferences I. Device Physics I. Device Physics (1) Y. Takahashi, "Silicon single-electron devices
https://www.rd.ntt/e/brl/result/activities/file/report01/E/data12.html
国際会議招待講演一覧 (2005)
. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa, "Silicon-based single-electron devices", Fourth
https://www.rd.ntt/brl/result/activities/file/report05/data10.html
List of Invited Talks at International Conferences (2005)
. Inokawa, "Silicon-based single-electron devices", Fourth International Conference on Silicon Epitaxy and
https://www.rd.ntt/e/brl/result/activities/file/report05/data11.html
Using Silicon Transistors to Enable Control and Detection of Single Electrons toward Developing High-performance Devices and Reducing Energy Consumption | NTT R&D Website
Electrons toward Developing High-performance Devices and Reducing Energy Consumption single-electron control
https://www.rd.ntt/e/research/JN202505_33797.html
World-record accuracy of gigahertz high-speed single-electron transfer|NTT Basic Research Laboratories | NTT R&D Website
optimized. In addition, gallium arsenide-based single-electron transfer devices, in which high accuracy was
https://www.rd.ntt/e/brl/latesttopics/2016/07/latest_topics_201607061949.html
Deviation from the Law of Energy Equipartition in a Small Dynamic-Random-Access Memory: Analysis about Thermal Noise with Single-Electron Resolution
about Thermal Noise with Single-Electron Resolution Deviation from the Law of Energy Equipartition in a
https://www.rd.ntt/e/brl/result/activities/file/report14/report10E.html
Fabrication Method for IC-Oriented Si Single-Electron Transistors
Katsumi Murase Device Physics Laboratory Single-electron devices are promising for future LSIs because of
https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan3e.htm
Electrical current generation by sorting thermal noise|NTT Basic Research Laboratories | NTT R&D Website
electrical currents. However, if the noise can be observed at the single-electron level and if electrons
https://www.rd.ntt/e/brl/latesttopics/2017/05/latest_topics_201705161434.html
Donor-Based Single Electron Pump
single electron pumps [3]. Our devices consist of Si nanowire MOSFETs in series fabricated on a silicon
https://www.rd.ntt/e/brl/result/activities/file/report12/report12e.html
国際会議招待講演一覧 (2003年度) I. デバイス物理関連
. Fujiwara, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium
https://www.rd.ntt/brl/result/activities/file/report03/J/data12.html
List of Invited Talks at International Conferences (Fiscal 2003) I. Device Physics
, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium on
https://www.rd.ntt/e/brl/result/activities/file/report03/E/data12.html
Overview of Quantum Electron Physics Research
techniques, our research focuses on single-electron control, new electron transport mechanisms and wide
https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html
Nanodevices Research Group
! Our Research Research on novel functional silicon quantum devices using high-accuracy single-electron
https://www.rd.ntt/brl/group_introduction/butsude-g/
Papers>>Single electrons -KN's HP-
elementary charge. Single-charge transfer devices are special SEDs that enable single-electron transfer
https://www.rd.ntt/brl/people/knishi50/paper_1.html
Electronic State of Molecular Devices at Room Temperature
. the single-electron charging effect, at room temperature [Fig. 1]. A simulation based on single
https://www.rd.ntt/e/brl/result/activities/file/report05/report09.html
国際会議招待講演一覧 (2000年度) Ⅰ. デバイス物理関連
single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued
https://www.rd.ntt/brl/result/activities/file/report00/J/data17.html
List of Invited Talks at International Conferences (Fiscal 2000) I. Device Physics
single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued
https://www.rd.ntt/e/brl/result/activities/file/report00/E/data17_e.html
Manipulation of Elementary Charge in a Silicon Charge-Coupled Device
Single-electron (SE) devices have been attracting much attention in light of the underlying physics and
https://www.rd.ntt/e/brl/result/activities/file/report00/E/report02_e.html
Overview of Quantum Physics and Electronics Research
crystal growth and advanced device fabrication techniques, focuses on single-electron control, new
https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm
Overview of Device Physics Research
analyzed and applied to a new functional circuit. In single electron transfer devices (charge-coupled
https://www.rd.ntt/e/brl/result/activities/file/report01/E/report01.html
Absolute Accuracy Evaluation of Si Single-Electron Transfer Devices
Absolute Accuracy Evaluation of Si Single-Electron Transfer Devices Absolute Accuracy Evaluation
https://www.rd.ntt/e/brl/result/activities/file/report11/report13.html
Invited Talks
-integrated single-electron devices fabricated by pattern-dependent oxidation (PADOX)", QDS'98, Sapporo, Japan
https://www.rd.ntt/e/brl/result/activities/file/report98/E/data/shotai.e.html
Contents
Contents Frontispiece Silicon Single-Electron Pump Hysteresis in micro-magnet Compound
https://www.rd.ntt/e/brl/result/activities/file/report02/E/2002_e.html
Home -KN's HP-
talk about single electron devices was given at China-Japan International Workshop on Quantum
https://www.rd.ntt/brl/people/knishi50/
国際会議招待講演一覧
. Murase, "Si island-integrated single-electron devices fabricated by pattern-dependent oxidation (PADOX
https://www.rd.ntt/brl/result/activities/file/report98/J/data/newshotai.html
Room-Temperature-Operating Digital-Analog Converter with Silicon Nanodevices
single-electron turnstile, which transfers electrons one by one, is promising for ultra-low-power
https://www.rd.ntt/e/brl/result/activities/file/report05/report15.html
Latest Research Contents | NTT Basic Research Laboratories | NTT R&D Website
gigahertz high-speed single-electron transfer 05/17/2016 Hundredfold noise reduction in microwave and
https://www.rd.ntt/e/brl/latesttopics/
国際会議招待講演一覧(2009)
. Nishiguchi, and Y. Ono, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in
https://www.rd.ntt/brl/result/activities/file/report09/data07.html
List of Invited Talks at International Conferences (2009)
, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in Nanotechnology International
https://www.rd.ntt/e/brl/result/activities/file/report09/data07.html
国際会議招待講演一覧(2008)
, and Y. Takahashi "Silicon Single-Electron Devices and Their Applications", TND 2008 Technical Forum
https://www.rd.ntt/brl/result/activities/file/report08/data10.html