Room-Temperature-Operating Digital-Analog Converter with Silicon Nanodevices
Room-Temperature-Operating Digital-Analog Converter with Silicon Nanodevices Room-Temperature
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Biography -KN's HP-
emission with silicon nano-devices) 2002-present NTT Basic Laboratories Sep. 2008 Invited researcher at
https://www.rd.ntt/brl/people/knishi50/biography.html
Gento Yamahata Home Page
- present: Distinguished Researcher at NTT Basic Research Laboratories Nanodevices Research Group in
https://www.rd.ntt/brl/people/yamahata/
Room-temperature single-electron transfer and detection with silicon
and detection with silicon nanodevices Transfer and subsequent detection of single electrons are
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Nanodevices Research Group
extreme energy efficient operation of silicon nanodevices. Appl. Phys. Lett. 121, 183501 (2022) Nature
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Static and Dynamic Structural Analysis of Biomolecules Using Atomic Force Microscopy
the suspended membrane over artificially fabricated, nano-scale cells on a silicon substrate (Fig. 1(c
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Akira Fujiwara | NTT R&D Website
Silicon nanodevices, Single-electron devices, Quantum electrical standards More Research Activity Related
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no_15_en.pdf
silicon with a pitch of 42 nm can be formed. This study would enable the fabrication of nanostructures at
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Akira Fujiwara's HOME PAGE
virtual workshop) [2] A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE
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Device Physics Laboratory
Takeshi Karasawa Silicon Nanodevices Research Group Group Leader Dr. Yasuo Takahashi Dr. Hiroshi Inokawa
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Device Physics Laboratory
middle of the year) Executive Manager, Dr. Toshio OginoDr. Hiroyuki Kageshima Takeshi Karasawa Silicon
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Device Physics Laboratory
middle of the year) Executive Manager, Dr. Toshio Ogino Dr. Hiroyuki Kageshima Takeshi Karasawa Silicon
https://www.rd.ntt/e/brl/result/activities/file/report01/E/member02.html
Device Physics Laboratory
. Koji Sumitomo Takeshi Karasawa Silicon Nanodevices Research Group Group Leader Dr. Yasuo Takahashi Dr
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Room-temperature single-electron transfer and detection with silicon nanodevics
sensitivity for single-electron detection. We thus proposed the silicon nanodevices which can transfer and
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山端 元音 ホームページ
Nanodevices and Nanotechnology (ISANN 2015) [Oral] High-accuracy 2-GHz single-electron pumping in silicon, G
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Contents
single-electron transfer and detection with silicon nanodevices Fast control of qubit coherence with
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Nano-four-point-probe systems
electron beam nanolithography. Fig. 2(a) shows Si nanoprobes with 60-nm-pitch and 20-nm-width on a silicon
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藤原聡のホームページ
virtual workshop) [2] A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE
https://www.rd.ntt/brl/people/afuji/index-j.html
国際会議招待講演一覧(2009)
. Nishiguchi, and Y. Ono, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in
https://www.rd.ntt/brl/result/activities/file/report09/data07.html
List of Invited Talks at International Conferences (2009)
, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in Nanotechnology International
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