Result for "Light emitting devices",169

The world's first realization of an optomechanical device with extremely low optical energy loss｜NTT Basic Research Laboratories | NTT R&D Website

variety of other materials can host light-emitting centers. *3 ... Optomechanical devices These include an

https://www.rd.ntt/e/brl/latesttopics/2021/02/latest_topics_202102011630.html

Microsoft PowerPoint - SP2010Digest_ms_en_01.ppt [互換モード]

(PCB, Dioxin) Fig. 2. Applications of AlN light-emitting devices NanotechnologyEnvironment Fig. 3

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/topics/taniyasu_e.pdf

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

semiconductors, and is therefore promising for light-emitting devices with the shortest wavelength for

https://www.rd.ntt/e/brl/result/activities/file/report06/k01.html

Enhanced and Suppressed Spontaneous Emission from a Buried Heterostructure Photonic Crystal Cavity

devices, such as lasers and light emitting diodes (LEDs). To realize efficient and ultrafast light

https://www.rd.ntt/e/brl/result/activities/file/report13/report29E.html

Nitride-Based Semiconductor Light-Emitting Transistors

Nitride-Based Semiconductor Light-Emitting Transistors Nitride-Based Semiconductor Light-Emitting

https://www.rd.ntt/e/brl/result/activities/file/report12/report02e.html

Overview of Quantum Electron Physics Research

devices, and short-wavelength light emitting devices) (4)Crystal growth technology under low gravity (high

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

largest among semiconductors, and is therefore promising for light-emitting devices with the shortest

https://www.rd.ntt/e/brl/result/activities/file/report06/report02.html

Welcome to Yoshitaka Taniyasu's Homepage

  Research Interests III-V Nitride Semiconductors and Devices 1. AlN-based ultra-violet light-emitting

https://www.rd.ntt/brl/people/taniyasu/

Overview of Quantum Physics and Electronics Research

quantum well structures, high-temperature electron devices, and short-wavelength light emitting devices

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

AlGaN-based Light Emitting Diodes

AlGaN-based Light Emitting Diodes AlGaN-based Light Emitting Diodes Toshio Nishida and Naoki

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report15.html

Emission Mechanism of AlN Deep-Ultraviolet Light-Emitting Diode

semiconductors. Therefore, AlN is a promising material for deep-ultraviolet (deep-UV) light-emitting devices with

https://www.rd.ntt/e/brl/result/activities/file/report10/report04.html

5th NTT-BRL school at NTT Atsugi R&D Center

electric appliances. Light emitting diodes (LEDs) made of GaN and AlGaN will emit short-wavelength light

https://www.rd.ntt/brl/event/brlschool2009/outline06.html

Award Winners’ List (Fiscal 2011)

deepultraviolet light-emitting devices Apr. 20,2011 The Institute of Physics (IOP) Fellow H. Yamaguchi For

https://www.rd.ntt/e/brl/result/activities/file/report11/data01.html

Yoshitaka Taniyasu | NTT R&D Website

, Atomic-layer semiconductors, Crystal growth, Light-emitting devices, Electron devices Related Contents

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

Step-free GaN Surfaces Fabricated by Selective-area Metalorganic Vapor Phase Epitaxy

-efficiency light emitting devices and sabband devices, such as resonant tunneling diodes and cascade lasers

https://www.rd.ntt/e/brl/result/activities/file/report09/k01.html

Polarized Emission of AlN Deep-UV LED by a Negative Crystal-field Splitting Energy

of 6 eV, the largest among semiconductors, and is therefore promising for light-emitting devices with

https://www.rd.ntt/e/brl/result/activities/file/report07/report02.html

Development of a groundbreaking process for release of GaN-based thin-film devices from substrates｜NTT Basic Research Laboratories | NTT R&D Website

thick) to any other substrates. Accordingly, preparation of novel devices such as very thin light

https://www.rd.ntt/e/brl/latesttopics/2012/04/latest_topics_201204120100.html

Overview of Quantum Physics and Electronics Research

that nitride materials containing Al have strong potential for highly-efficient light emitting devices

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report11.html

Parametric Frequency Conversion and Logic Operations Using Electromechanical Resonators

Vertical-Type Light-Emitting Diode We demonstrate that hexagonal boron nitride can form a release layer

https://www.rd.ntt/e/brl/result/activities/file/report11/cover_E.html

Nanowire and photonic crystal realize a novel optical nanocavity｜NTT Basic Research Laboratories | NTT R&D Website

photonic devices and circuits. *4 ... Purcell effect E. M. Purcell predicted decades ago that light

https://www.rd.ntt/e/brl/latesttopics/2014/02/latest_topics_201402202003.html

国際会議招待講演一覧　（2001年度）　III．量子電子物性関連

Mirrors", 4th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2002), Cordoba

https://www.rd.ntt/brl/result/activities/file/report01/J/data14.html

List of Invited Talks at International Conferences III. Quantum Electron Physics

Laser and Light Emitting Diodes (ISBLLED-2002), Cordoba, Spain (March, 2002) . （16） T. Fujisawa, "Time

https://www.rd.ntt/e/brl/result/activities/file/report01/E/data14.html

Layered Boron Nitride as a Release Layer for Mechanical Transfer of GaN-Based Devices

describe the electroluminescence emitted from the transferred multiple quantum well (MQW) light-emitting

https://www.rd.ntt/e/brl/result/activities/file/report11/report02.html

An InGaN-based horizontal cavity surface emitting laser diode

An InGaN-based horizontal cavity surface emitting laser diode An InGaN-based horizontal cavity

https://www.rd.ntt/e/brl/result/activities/file/report04/report04.html

Award Winners’ List (Fiscal 2010)

Research on Novel Ways of Controlling Propagation and Confinement of Light by Photonic Crystals Apr. 13

https://www.rd.ntt/e/brl/result/activities/file/report10/data04.html

no_42_e.pdf

Wavelength conversion Emitting/receiving Amplification Spatial light modulation (LiNbO3 etc.)Dielectrics

https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_42_e.pdf

Ultrafast Spontaneous Emission from Copper-Doped Silicon Nanocavity

develop novel fast and energy-efficient Si light emitting devices and quantum optical devices based on

https://www.rd.ntt/e/brl/result/activities/file/report12/report28e.html

Aiming to Become a Visible Researcher by Taking Up Challenges without Fear of Failure | NTT R&D Website

potential of semiconductor light-emitting devices for deep-UV light applications. ＊1 Doping: Addition of

https://www.rd.ntt/e/research/JN202306_22119.html

Contents

Emitting Lasers From Science to Innovative Technology Member List NTT Basic Research Laboratories Device

https://www.rd.ntt/e/brl/result/activities/file/report03/E/2003_e.html

List of Visitor's Talks (Fiscal 2002) II. Materials Science

, Germany "Organic light-emitting diodes and field-effect transistors" Nov. 28 Dr.Tobias Nyberg Linkopings

https://www.rd.ntt/e/brl/result/activities/file/report02/E/data08.html

InGaN quantum wells with high luminescent efficiency

InGaN quantum wells (QWs) have been widely used as the active layers of light emitting diodes and laser

https://www.rd.ntt/e/brl/result/activities/file/report04/report03.html

Overview of Research in Laboratories

heteroepitaxial layers, which points toward the realization of high-performance light emitting devices operating

https://www.rd.ntt/e/brl/result/activities/file/report16/report00E.html

Doping Control of AlInN/GaN Lattice-Matched Heterostructure

/visible light-emitting diodes (LEDs) and laser diodes (LDs) when using conventional lattice-mismatched

https://www.rd.ntt/e/brl/result/activities/file/report12/report04e.html

来訪者による講演一覧　（2002年度）　II.　機能物質科学関連

University, Germany 「Organic light-emitting diodes and field-effect transistors」 11月28日 Dr.Tobias Nyberg

https://www.rd.ntt/brl/result/activities/file/report02/J/data08.html

Surface Morphology Control of Nonpolar m-plane AlN Homoepitaxial Layers by Flow-rate Modulation Epitaxy

Laboratory AlGaN is an attractive material for light-emitting devices in the deep ultraviolet spectral region

https://www.rd.ntt/e/brl/result/activities/file/report16/report01E.html

List of Visitor's Talks (Fiscal 2003) III. Quantum Electron Physics

. Manfredotti University of Torino, Italy “Blue light sensitization of CVD diamond detectors” Nov. 27 Prof. R

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data09.html

国際会議招待講演一覧（2013年）

, San Francisco, U.S.A. (Feb. 2013). (3) Y. Taniyasu "AlN-Based UV/Visible Light-Emitting Devices", 5th

https://www.rd.ntt/brl/result/activities/file/report13/data08J.html

List of Invited Talks at International Conferences (2013)

, San Francisco, U.S.A. (Feb. 2013). (3) Y. Taniyasu "AlN-Based UV/Visible Light-Emitting Devices", 5th

https://www.rd.ntt/e/brl/result/activities/file/report13/data07E.html

Suppression of Self-Heating Effect in AlGaN/GaN HEMTs by Mechanical Transfer Using an h-BN Release Layer

, we have demonstrated strong emission from transferred InGaN/GaN multiple quantum well light emitting

https://www.rd.ntt/e/brl/result/activities/file/report14/report01E.html

List of Invited Talks at International Conferences (Fiscal 2003) III. Quantum Electron Physics

Transparent Structure for Ultraviolet Light Emitting Diodes”, Phys. of Light-Matter Coupling in Nanostructures

https://www.rd.ntt/e/brl/result/activities/file/report03/E/data14.html

国際会議招待講演一覧　（2003年度）　III．量子電子物性関連

, Germany (Oct. 2003). （16） T. Nishida, “GaN-free Transparent Structure for Ultraviolet Light Emitting

https://www.rd.ntt/brl/result/activities/file/report03/J/data14.html

Overview of Quantum Physics and Electronics Research

short-wavelength light emitting devices). (3) Electron field emission in AlN cold cathode materials

https://www.rd.ntt/e/brl/result/activities/file/report00/E/report11_e.html

来訪者による講演一覧　（2003年度）　III.　量子電子物性関連

Nanotubes」 11月26日 Prof. C. Manfredotti University of Torino, Italy 「Blue light sensitization of CVD diamond

https://www.rd.ntt/brl/result/activities/file/report03/J/data09.html

Development of an Optomechanical Device with Extremely Low Optical Energy Loss | NTT R&D Website

functional devices that add mechanical degrees of freedom to optical devices such as light-emitting ones

https://www.rd.ntt/e/research/JN202202_17215.html

Visible-light Planar Lightwave Circuit Technology and Integrated Laser-light-source Module for Smart Glasses｜NTT R&D Website

phase of the light. PLC technology is used in devices for optical fiber communications, such as optical

https://www.rd.ntt/e/research/JN202101_9664.html

Thin-Film Materials Research Group | NTT Basic Research Laboratories | NTT R&D Website

-frequency devices, and deep ultraviolet light-emitting devices. We are also conducting research on the

https://www.rd.ntt/e/brl/group_introduction/group_001.html

Invited Speakers - ISNTT2011 - International Symposium on Nanoscale Transport and Technology

Silicon" Ikuo Suemune - Hokkaido Univ. "Cooper-Pair Light Emitting Diodes" Michiharu Tabe - Shizuoka Univ

https://www.rd.ntt/brl/event/isntt2011/invited_speakers.html

Publications - NTT Basic Research Laboratories

. Kasu IEEE Electron Dev. Lett. 33, 1111 (2012). A Vertical InGaN/GaN Light-Emitting Diode Fabricated on

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/new1001003.html

Distinguished Technical Member

ultraviolet light-emitting diodes (LEDs) and diamond high-frequency high-power transistors. He received

https://www.rd.ntt/e/brl/result/activities/file/report06/member05.html

国際会議招待講演一覧（2009）

, Japan (Jan. 2009). (2) Y. Taniyasu and M. Kasu, "Recent progress in AlN deep-UV light-emitting diodes

https://www.rd.ntt/brl/result/activities/file/report09/data06.html