Result for "Light emitting devices",168

The world's first realization of an optomechanical device with extremely low optical energy loss｜NTT Basic Research Laboratories | NTT R&D Website

variety of other materials can host light-emitting centers. *3 ... Optomechanical devices These include an

https://www.rd.ntt/e/brl/latesttopics/2021/02/latest_topics_202102011630.html

Microsoft PowerPoint - SP2010Digest_ms_en_01.ppt [互換モード]

(PCB, Dioxin) Fig. 2. Applications of AlN light-emitting devices NanotechnologyEnvironment Fig. 3

https://www.rd.ntt/brl/group_introduction/shitsumaku-g/topics/taniyasu_e.pdf

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

semiconductors, and is therefore promising for light-emitting devices with the shortest wavelength for

https://www.rd.ntt/e/brl/result/activities/file/report06/k01.html

Enhanced and Suppressed Spontaneous Emission from a Buried Heterostructure Photonic Crystal Cavity

devices, such as lasers and light emitting diodes (LEDs). To realize efficient and ultrafast light

https://www.rd.ntt/e/brl/result/activities/file/report13/report29E.html

Nitride-Based Semiconductor Light-Emitting Transistors

Nitride-Based Semiconductor Light-Emitting Transistors Nitride-Based Semiconductor Light-Emitting

https://www.rd.ntt/e/brl/result/activities/file/report12/report02e.html

Overview of Quantum Electron Physics Research

devices, and short-wavelength light emitting devices) (4)Crystal growth technology under low gravity (high

https://www.rd.ntt/e/brl/result/activities/file/report98/E/denshi/denshi1.e.html

Aluminum Nitride Light-Emitting Diodes with the Shortest Wavelength

largest among semiconductors, and is therefore promising for light-emitting devices with the shortest

https://www.rd.ntt/e/brl/result/activities/file/report06/report02.html

Welcome to Yoshitaka Taniyasu's Homepage

  Research Interests III-V Nitride Semiconductors and Devices 1. AlN-based ultra-violet light-emitting

https://www.rd.ntt/brl/people/taniyasu/

Overview of Quantum Physics and Electronics Research

quantum well structures, high-temperature electron devices, and short-wavelength light emitting devices

https://www.rd.ntt/e/brl/result/activities/file/report99/E/qe/qe_overview.htm

AlGaN-based Light Emitting Diodes

AlGaN-based Light Emitting Diodes AlGaN-based Light Emitting Diodes Toshio Nishida and Naoki

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report15.html

Emission Mechanism of AlN Deep-Ultraviolet Light-Emitting Diode

semiconductors. Therefore, AlN is a promising material for deep-ultraviolet (deep-UV) light-emitting devices with

https://www.rd.ntt/e/brl/result/activities/file/report10/report04.html

5th NTT-BRL school at NTT Atsugi R&D Center

electric appliances. Light emitting diodes (LEDs) made of GaN and AlGaN will emit short-wavelength light

https://www.rd.ntt/brl/event/brlschool2009/outline06.html

Award Winners’ List (Fiscal 2011)

deepultraviolet light-emitting devices Apr. 20,2011 The Institute of Physics (IOP) Fellow H. Yamaguchi For

https://www.rd.ntt/e/brl/result/activities/file/report11/data01.html

Yoshitaka Taniyasu | NTT R&D Website

, Atomic-layer semiconductors, Crystal growth, Light-emitting devices, Electron devices Related Contents

https://www.rd.ntt/e/organization/researcher/superior/s_030.html

Step-free GaN Surfaces Fabricated by Selective-area Metalorganic Vapor Phase Epitaxy

-efficiency light emitting devices and sabband devices, such as resonant tunneling diodes and cascade lasers

https://www.rd.ntt/e/brl/result/activities/file/report09/k01.html

Polarized Emission of AlN Deep-UV LED by a Negative Crystal-field Splitting Energy

of 6 eV, the largest among semiconductors, and is therefore promising for light-emitting devices with

https://www.rd.ntt/e/brl/result/activities/file/report07/report02.html

Development of a groundbreaking process for release of GaN-based thin-film devices from substrates｜NTT Basic Research Laboratories | NTT R&D Website

thick) to any other substrates. Accordingly, preparation of novel devices such as very thin light

https://www.rd.ntt/e/brl/latesttopics/2012/04/latest_topics_201204120100.html

Overview of Quantum Physics and Electronics Research

that nitride materials containing Al have strong potential for highly-efficient light emitting devices

https://www.rd.ntt/e/brl/result/activities/file/report01/E/report11.html

Parametric Frequency Conversion and Logic Operations Using Electromechanical Resonators

Vertical-Type Light-Emitting Diode We demonstrate that hexagonal boron nitride can form a release layer

https://www.rd.ntt/e/brl/result/activities/file/report11/cover_E.html

Nanowire and photonic crystal realize a novel optical nanocavity｜NTT Basic Research Laboratories | NTT R&D Website

photonic devices and circuits. *4 ... Purcell effect E. M. Purcell predicted decades ago that light

https://www.rd.ntt/e/brl/latesttopics/2014/02/latest_topics_201402202003.html