Overview of transistor technology and NTT's R&D on the world's fastest transistor|NTT R&D Website
Overview of transistor technology and NTT's R&D on the world's fastest transistor|NTT R&D Website
https://www.rd.ntt/e/communication_device/0003.html
Successful Amplification of Transistor Current Without Additional Power|NTT Basic Research Laboratories | NTT R&D Website
Successful Amplification of Transistor Current Without Additional Power|NTT Basic Research
https://www.rd.ntt/e/brl/latesttopics/2018/12/latest_topics_201812182105.html
Successful Measurement of Ion Concentrations in Serum Using Nanoscale Silicon Transistor|NTT Basic Research Laboratories | NTT R&D Website
Successful Measurement of Ion Concentrations in Serum Using Nanoscale Silicon Transistor|NTT Basic
https://www.rd.ntt/e/brl/latesttopics/2018/02/latest_topics_201802061922.html
Research>>New Applications -KN's HP-
, and powerful devices in electrical circuits is a transistor. Its performance has been increased by
https://www.rd.ntt/brl/people/knishi50/research_application.html
Nitride Heterojunction Bipolar Transistor with Regrown Base Layer
Nitride Heterojunction Bipolar Transistor with Regrown Base Layer Nitride Heterojunction Bipolar
https://www.rd.ntt/e/brl/result/activities/file/report02/E/report14.html
Single-Electron Stochastic Resonance Using Nanowire Transistors
transistor (T-FET) transfers single electrons. An upper gate (UG) and lower gate (LG2) are used to induce an
https://www.rd.ntt/e/brl/result/activities/file/report11/report12.html
Papers>>Single electrons -KN's HP-
-Electron Transistor under Illumination ECS Trans. vol. 92, pp. 47-56 (2019). Y. Takahashi, M. Sinohara, M
https://www.rd.ntt/brl/people/knishi50/paper_1.html
E04_leaf_e.pdf
them. Summary Based on proprietary high-speed compound semiconductor transistor and progressive circuit
https://www.rd.ntt/forum/2023/doc/E04_leaf_e.pdf
Realization of an ultra-energy-saving electro-optic modulator and highly-efficient optical transistor|NTT Basic Research Laboratories | NTT R&D Website
transistor|NTT Basic Research Laboratories | NTT R&D Website NTT R&D Website NTT Basic Research Laboratories
https://www.rd.ntt/e/brl/latesttopics/2019/04/latest_topics_201904161802.html
Signal Detection Via a Transistor with Steep Current Characteristics
Signal Detection Via a Transistor with Steep Current Characteristics Signal Detection Via a
https://www.rd.ntt/e/brl/result/activities/file/report12/report13e.html
no_10_en.pdf
NTT Basic Research Laboratories Impact of single atom on transistor characteristics - towards
https://www.rd.ntt/brl/event/splaza2009/poster/EN/no_10_en.pdf
Multigate Single-Electron Transistor
Multigate Single-Electron Transistor Multigate Single-Electron Transistor: Application to an
https://www.rd.ntt/e/brl/result/activities/file/report98/E/sentan/sentan2e.htm
Npn-type InGaN/GaN Nitride Heterojunction Bipolar Transistor (HBT)
Npn-type InGaN/GaN Nitride Heterojunction Bipolar Transistor (HBT) Npn-type InGaN/GaN Nitride
https://www.rd.ntt/e/brl/result/activities/file/report01/E/report14.html
Microsoft Word - CV-AkiraFujiwara.doc
Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics
https://www.rd.ntt/brl/people/afuji/CV-AkiraFujiwara.pdf
Detection of Single Boron Acceptor in Silicon Nano-transostor
acceptor in a small transistor as a first step towards the realization of single-dopant technology [4
https://www.rd.ntt/e/brl/result/activities/file/report06/report15.html
Award Winners’ List (Fiscal 2006)
-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor" Aug. 29, 2006 The
https://www.rd.ntt/e/brl/result/activities/file/report06/data03.html
Overview of Device Physics Research
materials and device structures. The single electron transistor is a device whose power dissipation is
https://www.rd.ntt/e/brl/result/activities/file/report00/E/report01_e.html
Communication and Device Technology|NTT R&D Website
technology enables optical lattice clock network concept #3 Overview of transistor technology and NTT's R&D
https://www.rd.ntt/e/communication_device/
Papers -KN's HP-
sensing devices. Characteristics of Si Single-Electron Transistor under Illumination ECS Trans. vol. 92
https://www.rd.ntt/brl/people/knishi50/paper_all.html
Award Winner's List (Fiscal 2004)
-Transistor-Based Multiple-Valued Logic" May 21, 2004 The Society of Non-Traditional Technology Award for
https://www.rd.ntt/e/brl/result/activities/file/report04/data05_01.html