Akira Fujiwara, Dr. Eng.

Updated on Oct 1, 2020 Japanese version is here.

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Biography

AkiraFujiwaraAkira Fujiwara was born in Japan, 1967. He received the B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989,1991, and 1994, respectively. His Ph.D. thesis was entitled "Resonant electron capture in semiconductor quantum wells". In 1994, he joined LSI Laboratories, Nippon Telegraph and Telephone (NTT) Corporation, Kanagawa, Japan. He moved to the Basic Research Laboratories (BRL) in 1996. He was a guest researcher at National Institute of Standards and Technology (NIST), Gaithersburg, USA during 2003-2004. For 2006-2020, He was a group leader of Nanodevcies Research Group, NTT BRL. For 2007-2015, He was a Distinguished Technical Member, NTT BRL. For 2012-2020, he served as an Senior Manager of Physical Science Laboratory. Since 2015, He is a NTT Senior Distinguished Scientist. In 2011-2014 he was supported by the funding program for Next Generation World-Leading Researchers (NEXT Program), JSPS. He is now a leader of the 2018-2022 JSPS KAKENHI S (Quantum Standards and Ultimate Precision Measurements Based on Single Electrons) .He is a IEEE fellow and a JSAP (the Japan Society of Applied Physics) Fellow.

 

Research Interests

Physics and application of low-dimensional structures

Silicon nanostructures and their application to nanodevices

Single-electron devices and their applications

Education

1991 M.S. in Applied Physics, The University of Tokyo

1994 Ph.D. in Applied Physics, The University of Tokyo

1989 B.S. in Applied Physics, The University of Tokyo

Employment

2015- Senior Distinguished Scientist, NTT BRL

2012-  Senior Manager of Physical Science Laboratory, NTT BRL

2007-2015  Distinguished technical member, NTT BRL

2006-  Group leader of Nanodevices Research Group, NTT BRＬ

1996  NTT Basic Research Laboratories (BRL)

1994  NTT LSI Laboratories

Professional Activities

       2017.10-2023.9  Science Council of Japan, member

2016 & 2012 & 2019  Examiner of Ph. D. thesis, UNSW

2014 & 2011 & 2008  Examiner of Ph. D. thesis, Tokyo Tech.

2013.4-2014.3 Visiting Professor, Hokkaido University

2012 Examiner of Ph. D. thesis, UNSW

2011.4-2012.3  Japanese Society of Applied Physics(JSAP)　Executive Director

2010.4-2011.3  Japanese Society of Applied Physics(JSAP)　Director

2003.7-2004.7 Guest researcher at the National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA

2007.8  Lecturer(Non-Full-time), The University of Tokyo

Awards and Honors

JSAP fellow, 2020.9.8

JSAP Silicon Technology Division Paper Award, 2020

IEEE fellow, 2018.1.1

Prizes for Science and Technology, the Minister of Education, Culture, Sports, Science and Technology (MEXT), 2017

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2013

The Young Scientists’ Prize, the Minister of MEXT (Ministry of Education, Culture, Sports, Science, and Technology), 2006

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2006

Japanese Journal of Applied Physics (JJAP) Paper Awards, 2003

SSDM (International Conference on Solid State Devices and Materials) Paper Award, 1999

SSDM (International Conference on Solid State Devices and Materials) Young Researcher Award, 1998

 

Committee/International Conference Activities

Co-chair of International Symposium on Nanoscale Transport and Technology ISNTT 2015, Atsugi, Nov. 2015.

Co-chair of Silicon Quantum Electronics Workshop, Takamatsu, Aug. 3-4, 2015.

Program vice chair of Int. Conf. on Solid State Devices and Materials (SSDM2014), Tsukuba, Sept. 2014.

Co-chair of International Symposium on Nanoscale Transport and Technology ISNTT 2013, Atsugi, Nov. 2013.

Program vice chair of Int. Conf. on Solid State Devices and Materials (SSDM2013), Fukuoka, Sept. 2013.

Program vice chair of APPC12（the 12th Asia Pacific Physics Conference）, Makuhari, Japan, July, 2013.2007.8 

Co-chair of Workshop on Innovative Devices and Systems (WINDS) , Hawaii, USA, Dec. 2-7 2012.

 Special committee of Emerging Research Devices WG, STRJ (Semiconductor Technology Roadmap Committee of Japan) 2008.10-

 

Government Fund

       2018-2022  JSPS KAKENHI S (Quantum Standards and Ultimate Precision Measurements Based on Single Electrons)

2011-2014 The Funding Program for Next Generation World-Leading Researchers (NEXT Program), JSPS 　

CV (as of 2020.10.1)

Curriculum Vitae (CV) incl. publication lists etc.

 

Publication data  (as of 2018.6.15)

http://www.researcherid.com/rid/A-6648-2012

Total: 171 papers, Average Citations 19  h-index 32

First author: 17 paper, Average Citations 32.94  h-index 11

 

Google Scholor Citations (automatically updated)

 

Recent selected papers/international conferences  (updated on Oct 1, 2020)

Single-electron transfer and dynamics, Tunable-barrier single-electron transistor and double quantum dots, Single-dopant device

[1]       S. P. Giblin, E. Mykkänen, A. Kemppinen, P. Immonen, A. J. Manninen, M. Jenei, M. Möttönen, G. Yamahata, A. Fujiwara  and M.  Kataoka, Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility,  Metrologia doi.org/10.1088/1681-7575/ab72e0 (2020).

[2]       (Published in Nature Nanotech. !)G. Yamahata, S. Ryu, N. Johnson, H-S. Sim, A. Fujiwara, and M. Kataoka, Picosecond coherent electron motion in a silicon single-electron source, Nature Nanotechnology 14, 1019–1023 (2019).

[3]       N. Johnson, G. Yamahata, and A. Fujiwara, Measurement of the curvature and height of the potential barrier for a dynamic quantum dot, Appl. Phys. Lett. 115, 162103 (2019).

[4]       S. Giblin, A. Fujiwara, G. Yamahata, M. H. Bae, N. Kim, A. Rossi, M. Möttönen, and M. Kataoka, Evidence for universality of tunable-barrier electron pumps, Metrologia 56, 044004 (2019).

[5]       G. Yamahata, S. P. Giblin, M. Kataoka, and T. Karasawa, and A. Fujiwara, High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump, Scientific Reports 7, 45137 (2017).

[6]       G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara, Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107, Appl. Phys. Lett. 109, 013101 (2016).
 ( See http://www.npl.co.uk/news/record-speed-and-accuracy-achieved-with-single-electron-pumps )

[7]       G. Yamahata, T. Karasawa, and A. Fujiwara, Gigahertz single-hole transfer in Si tunable-barrier pumps, Appl. Phys. Lett. 106, 023112 (2015).

[8]       G. Yamahata, K. Nishiguchi, and A. Fujiwara, Gigahertz single-trap electron pumps in silicon, Nat. Commun. 5, 5038 (2014).

[9]       G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014).

[10]   G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nano Lett. 12 763−768 (2012).

[11]   G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron huttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 222104 (2011).

[12]   S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).

[13]   S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett.  93, 222103 (2008).

[14]   A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Appl. Phys. Lett. 92, 042102 (2008).

[15]   H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).

[16]   M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).

[17]   A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 88 053121 (2006).

[18]   A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett.  84, 1323-1325 (2004).

[19]   A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

 

Single-electron detection and counting statistics / stochastic resonance

[1]      (Published in Nature Com. !) K Chida, S. Desai, K Nishiguchi, and A Fujiwara: Power generator driven by Maxwell's demon, Nat. Commun. 8, 15310 (2017).

[2]      K Chida, K Nishiguchi, G Yamahata, H Tanaka, A Fujiwara: Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection, Appl. Phys. Lett. 107, 073110, 2015 (2015).

[3]      P. A. Carles, K Nishiguchi, and A Fujiwara: Deviation from the law of energy equipartition in a small dynamic-random-access memory, Jpn. J. Appl. Phys. 54, 06FG03 (2015).

[4]      K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal noise, Nanotechnology 25, 275201 (2014).

[5]      K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele, Wide-bandwidth charge sensitivity with a radio-frequency field-effect Transistor, Appl. Phys. Lett. 103, 143102 (2013).

[6]      K. Nishiguchi and A. Fujiwara: Detecting signals buried in noise via nanowire transistors using stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).

[7]      K. Nishiguchi and A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire Transistors, Jpn. J. Appl. Phys. 50, 06GF04 (2011)..

[8]      K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).

[9]      K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).

 

Functional nanotransistors, sensors, molecular electronics

[1]       (Published in Nature Com !)   H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Electron aspirator using electron–electron scattering in nanoscale silicon, Nature Communications 9, 4813 (2018)

[2]      (Published in Nature Materials !) R. Sivakumarasamy, R. Hartkamp, B. Siboulet, J.-F. Dufreche, K. Nishiguchi, A. Fujiwara, and N. Clément, Selective-layer-free Blood Serum Ionogram based on Ion-specific Interactions with a Nanotransistor, Nature Materials 17 464 (2018).

[3]      N. Clement and A. Fujiwara, Molecular diodes: Breaking the Landauer limit, Nat. Nanotech. 12, 725 (2017).

[4]      N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors, Nano Lett. 13, 3903−3908 (2013).

[5]      I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an Electromechanical Resonator , Phys. Rev. Lett. 110 127202 (2013).]

[6]      N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity, Appl. Phys. Lett. 98, 014104 (2011).

[7]      I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature Communications 2, 198 doi:10.1038/ncomms1201 (2011).

[8]      N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).

 

Silicon quantum well and  optical properties

[1]      J. Noborisaka, K. Nishiguchi, A. Fujiwara: Electric tuning of direct-indirect optical transitions in silicon, Scientific Reports 4, 6950 (2014).

[2]      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara: Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).

[3]      J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 96, 112102 (2010).

 Physics of  Si 2DEG and valley physics in collaboration with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina (Univ. of Bath) , Dr. Vincent Renard (CEA)

[1]      V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara, Y. Hirayama and K. Takashina, Valley polarization assisted spin polarization in two dimensions, Nat. Commun. 6, 7230 (2015).

[2]      V. T. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic behaviour in SOI quantum wells with strong intervalley scattering, Scientific reports | 3 : 2011 | DOI: 10.1038/srep02011 (2013).

[3]      K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y. Hirayama, Phys. Rev. B 88, 201301(R) (2013).

[4]      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hiryama: Electron and  hole mobilities at a Si/SiO2 interface with giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).

[5]      K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama: Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403 (2011).

[6]      K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki: Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104 (2009).

[7]      Y. Niida, K. Takashina, A. Fujiwara, T. Fujis   awa, and Y. Hirayama: Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICS LETTERS 94, 142101 (2009).

Invited talk:

[1]      A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron dynamics in a silicon dynamic quantum dot, Int. Workshop on Cool Electrons in Flatlands (CEF2020) (June 15-24, 2020, Catania, Italy, held as virtual workshop)

[2]      A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC2019) (Oct.. 27-30, 2019, Stockholm, Sweden)

[3]      A. Fujiwara, Ultimate electronics with silicon nanowire MOSFETs, Workshop on Innovative Nanoscale Devices and Systems (WINDS) (Nov. 25-30, 2018, Hawaii, USA)

[4]      A. Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi, Tunable-barrier electron pump for quantum current standards and information-to-energy converters China-Japan International Workshop on Quantum Technologies, QTech2018 (Aug 23-24, 2018, Hefei, China).

[5]      A. Fujiwara, Ultimate electronics with control of single electrons, 7th Summer School on Semiconductor/Superconducting Quantum Coherence Effect and Quantum Information (August 27-29, 2017, Shuzenji, Japan).

[6]      A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate electronics with control of single electrons, EM-NANO2017 (June 18-21, 2017, Fukui, Japan).

[7]      A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate Single Electronics with Silicon Nanowire MOSFETs, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017, Kyoto, Japan).

[8]      A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, and M. Kataoka, Gigahertz single-electron pump for quantum current standard,  33rd ICPS (Beijing, 31 July- 5 August, 2016)

[9]      A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump towards a Representation of the New Ampere, 2015 SSDM (Sapporo, 27-30 September, 2015).

[10]  A. Fujiwara, G. Yamahata, J. Noborisaka, and K. Nishiguchi, Nanoscale Silicon MOSFET for Metrology and Valleytronics Applications, 2015 UK-Japan Silicon Nanoelectronics and Nanotechnology Symposium (Southampton, 9-10 July, 2015).

[11]  (Plenary talk) A. Fujiwara, Silicon single-electron devices for ultimate electronics, EURAMET DC & Quantum Metrology Meeting (Bern, 27-29 May 2015)

[12]  A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse applications, The 6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)

[13]  (Plenary talk) A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf. on Micro and Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).

[14]  A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon Single-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics Workshop (June 2012, Hawaii, USA).

[15]  A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore E& ‘Beyond CMOSEEra (March 1 E 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 E20.)

[16]  A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)

[17]  A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)

[18]  A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).

[19]  A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).

[20]  A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).

[21]  A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).

[22]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase  Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).

[23]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).

[24]  A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).

 

Selected first-author papers

[1]      A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Applied Physics Letters 92, 042102 (2008).

[2]      A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

[3]      A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).

[4]      A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42, 2429-2433 (2003).

[5]      A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80, 4567-4569 (2002).

[6]      A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 1209-1213 (2002).

[7]      A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

[8]      A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Double-island single-electron devices - A useful unit device for single-electron logic LSI's, IEEE Transactions on Electron Devices 46, 954-959 (1999).

[9]      A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263 (1998).

[10]  A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).

[11]  A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67, 2957-2959 (1995).

 

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